Intersil Corporation FSJ9055R, FSJ9055D Datasheet

June 1998

Semiconductor

FSJ9055D,

FSJ9055R

55A, -60V, 0.029 Ohm, Rad Hard,

SEGR Resistant, P-Channel Power MOSFETs

Features

• 55A, -60V, r

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm
V

up to 80% of Rated Breakdown and

DS

V

of 10V Off-Bias

GS

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 6.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

DS(ON)

= 0.029Ω

2

2

with

DSS

DM

2

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K Commercial FSJ9055D1
10K TXV FSJ9055D3
100K Commercial FSJ9055R1
100K TXV FSJ9055R3
100K Space FSJ9055R4

Description

The Discrete Products Operation of Harris Semiconductor
has developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose hard­ness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.

The Harris portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc­ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula­tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Harris Semiconductor for any
desired deviations from the data sheet.

Symbol

D

G

Formerly available as type TA17750.

Package

TO-254AA

G

S

D

CAUTION: Beryllia Warning per MIL-S-19500

refer to package specifications.

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © Harris Corporation 1998

3-221

S

File Number 4415.1

FSJ9055D, FSJ9055R

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

FSJ9055D, FSJ9055R UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

-60 V

-60 V

Continuous Drain Current

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

D
D

DM

GS

55 A

35 A
165 A
±20 V

Maximum Power Dissipation

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T
T

125 W

50 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.20 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

L

165 A

55 A

165 A

-55 to 150
300

o

C

o

C

(Distance >0.063in (1.6mm) from Case, 10s Max)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

DSSID

GS(TH)VGS

= 1mA, VGS = 0V 60 - - V

= VDS,

ID = 1mA

TC = -55oC - - -7.0 V
TC = 25oC -2.0 - -6.0 V
TC = 125oC -1.0 - - V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSS

GSS

VDS = -48V,
VGS = 0V

TC = 25oC--25µA
T

= 125oC - - 250 µA

C

VGS = ±20V TC = 25oC - - 100 nA

TC = 125oC - - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)12ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 12V Q
Threshold Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Plateau Voltage V

(PLATEAU)ID

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

r

f

g(12)

g(TH)

gs

gd

ISS
OSS
RSS

JC

θ

JA

θ

= -12V, ID = 55A - - -1.75 V

= 35A,

VGS = -12V

VDD = -30V, ID = 55A,
RL = 0.55Ω, VGS = -12V,
RGS = 2.35Ω

TC = 25oC - 0.020 0.029 Ω
TC = 125oC - - 0.044 Ω

- - 55 ns

- - 90 ns

- - 80 ns

- - 35 ns

= 0V to -20V VDD = -30V,

VGS = 0V to -12V - 130 160 nC

ID = 55A

- - 250 nC

VGS = 0V to -2V - - 16 nC

-3648nC

-4253nC

= 55A, VDS = -15V - -6 - V

VDS = -25V, VGS = 0V,
f = 1MHz

- 6300 - pF

- 2250 - pF

- 300 - pF

- - 0.83

--40

o

C/W

o

C/W

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FSJ9055D, FSJ9055R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

SD

rr

Electrical Specifications up to 100K RAD T

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown V olts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both V

Single Event Effects (SEB, SEGR) (Note 4)

TEST SYMBOL

Single Event Effects Safe Operating
Area

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

2

(typical), T = 25oC.

ISD = 55A -0.6 - -1.8 V
ISD = 55A, dISD/dt = 100A/µs - - 110 ns

= 25oC, Unless Otherwise Specified

C

DSS

GS(TH)

GSS
DSS

DS(ON)

DS(ON)12VGS

= -12V, VDS = 0V and VGS = 0V, VDS = 80% BV

GS

VGS = 0, ID = 1mA -60 - V
VGS = VDS, ID = 1mA -2.0 -6.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = -48V - 25 µA
VGS = -12V, ID = 55A - -1.75 V

= -12V, ID = 35A - 0.029 Ω

.

DSS

ENVIRONMENT (NOTE 5)

APPLIED

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (µ)

VGS BIAS

SEESOA Ni 26 43 20 -60

Br 37 36 10 -60
Br 37 36 15 -48
Br 37 36 20 -36
Br 60 31 0 -60

I 60 31 5 -48
I 60 31 10 -36
I 60 31 15 -24
I 60 31 20 -12

(V)

(NOTE 6)

MAXIMUM

VDS BIAS

(V)

Typical Performance Curves

LET = 26MeV/mg/cm
LET = 37MeV/mg/cm2, RANGE = 36µ
LET = 60MeV/mg/cm

5

V

(V)

GS

(V)

DS

V

-70

-60

-50

-40

-30

-20

-10
0

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

TEMP = 25oC

0101520 25

Unless Otherwise Specified

2

, RANGE = 43µ

2

, RANGE = 31µ

1E-3

1E-4

1E-5

1E-6

LIMITING INDUCTANCE (HENRY)

1E-7

-30
DRAIN SUPPLY (V)

ILM = 10A

30A

100A

300A

-300-100-10

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

GAMMA DOT CURRENT TO I

AS

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