Intersil Corporation FSJ160R, FSJ160D Datasheet

June 1998

FSJ160D, FSJ160R

70A, 100V, 0.022 Ohm, Rad Hard,

SEGR Resistant, N-Channel Power MOSFETs

Features

• 70A, 100V, r

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm
V

up to 80% of Rated Breakdown and

DS

V

of 10V Off-Bias

GS

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 9nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

DS(ON)

= 0.022Ω

2

2

with

DSS

DM

2

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K Commercial FSJ160D1
10K TXV FSJ160D3
100K Commercial FSJ160R1
100K TXV FSJ160R3
100K Space FSJ160R4

Description

The Discrete Products Operation of Intersil Corporation has
developeda series of Radiation Hardened MOSFETs specif­ically designed for commercial and military space applica­tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single EventGate Rupture (SEGR) in particu­lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi­ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc­ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula­tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be oper­ated directly from integrated circuits.

Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.

Symbol

D

G

Formerly available as type TA17666.

Package

TO-254AA

G

S

CAUTION: Beryllia Warning per MIL-S-19500

refer to package specifications.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

3-1

S

D

File Number 4338.1

FSJ160D, FSJ160R

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

FSJ160D, FSJ160R UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

100 V
100 V

Continuous Drain Current

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

D
D

DM

GS

70 A

44 A
200 A
±20 V

Maximum Power Dissipation

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T
T

192 W

77 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

L

200 A

70 A

200 A

-55 to 150
300

o

C

o

C

(Distance >0.063in (1.6mm) from Case, 10s Max)

CAUTION: Stresses abovethose listed in “Absolute Maximum Ratings” maycause permanent damage to the device. This is a stress only ratingand operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

DSSID

GS(TH)VGS

= 1mA, VGS = 0V 100 - - V

= VDS,

ID = 1mA

TC = -55oC - - 5.0 V
TC = 25oC 1.5 - 4.0 V
TC = 125oC 0.5 - - V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSS

GSS

VDS = 80V,
VGS = 0V

TC = 25oC--25µA
TC = 125oC - - 250 µA

VGS = ±20V TC = 25oC - - 100 nA

TC = 125oC - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)12ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 12V Q
Threshold Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Plateau Voltage V

(PLATEAU)ID

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

r

f

g(12)

g(TH)

gs
gd

ISS
OSS
RSS

JC

θ

JA

θ

= 12V, ID = 70A - 1.62 V

= 44A,

VGS = 12V

VDD = 50V, ID = 70A,
RL = 0.71Ω, VGS 12V,
RGS = 2.35Ω

TC = 25oC - 0.016 0.022 Ω
TC = 125oC - - 0.036 Ω

- - 40 ns

- - 120 ns

- - 95 ns

- - 45 ns

= 0V to 20V VDD = 50V,

VGS = 0V to 12V - 190 210 nC

ID = 70A

- - 320 nC

VGS = 0V to 2V - - 11 nC

-3549nC

- 110 120 nC

= 70A, VDS = 15V - 8 - V

VDS = 25V, VGS = 0V,
f = 1MHz

- 4500 - pF

- 1530 - pF

- 570 - pF

- - 0.65

o

C/W

--40oC/W

3-2

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

FSJ160D, FSJ160R

Forward Voltage V
Reverse Recovery Time t

SD

rr

Electrical Specifications up to 100K RAD T

ISD = 70A 0.6 - 1.8 V
ISD = 70A, dISD/dt = 100A/µs - - 560 ns

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

DraintoSource Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

DS(ON)12

DSS

GS(TH)

GSS
DSS

DS(ON)

VGS = 0, ID = 1mA 100 - V
VGS = VDS, ID = 1mA 1.5 4.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = 80V - 25 µA
VGS = 12V, ID = 70A - 1.62 V
VGS = 12V, ID = 44A - 0.022 Ω

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV

DSS

.

Single Event Effects (SEB, SEGR) (Note 4)

ENVIRONMENT (NOTE 5)

APPLIED

VGSBIAS

TEST SYMBOL

Single Event Effects Safe Operating
Area

ION

SPECIES

SEESOA Ni 26 43 -20 100

Br 37 36 -10 100

TYPICAL LET
(MeV/mg/cm)

TYPICAL

RANGE (µ)

Br 37 36 -15 80
Br 37 36 -20 50

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

(V)

(NOTE 6)

MAXIMUM

VDS BIAS

(V)

Typical Performance Curves Unless Otherwise Specified

V

GS

2

, RANGE = 43µ

(V)

3-3

1E-3

1E-4

1E-5

1E-6

LIMITING INDUCTANCE (HENRY)

1E-7

GAMMA DOT CURRENT TO I

30

DRAIN SUPPLY (V)

AS

ILM = 10A

30A

100A

300A

30010010

LET = 26MeV/mg/cm
LET = 37MeV/mg/cm2, RANGE = 36µ

(V)

DS

V

120

100

80

60

40

20

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

TEMP = 25oC

0

0 -10 -15 -20 -25-5

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

1000