Intersil Corporation FSJ055R Datasheet

FSJ055D, FSJ055R

Data Sheet October 1999 File Number 4250.5

70A, 60V, 0.012 Ohm, Radiation Hardened,
SEGR Resistant, N-Channel Power
MOSFETs

The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of totaldose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Features

• 70A, 60V, r

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm
V

up to 80% of Rated Breakdown and

DS

V

of 10V Off-Bias

GS

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 6.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications for
3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

DS(ON)

= 0.012Ω

2

2

with

2

Symbol

D

G

DSS

DM

Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K Commercial FSJ055D1
10K TXV FSJ055D3
100K Commercial FSJ055R1
100K TXV FSJ055R3
100K Space FSJ055R4

Packaging

CAUTION: Beryllia Warning per MIL-S-19500

S

TO-254AA

G

S

D

refer to package specifications.

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 407-727-9207

| Copyright © Intersil Corporation 1999

FSJ055D, FSJ055R

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

FSJ055D, FSJ055R UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

60 V
60 V

Continuous Drain Current

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

D
D

DM

GS

70 A

54 A
200 A
±20 V

Maximum Power Dissipation

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T
T

125 W

50 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.20 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

L

200 A

70 A

200 A

-55 to 150
300

o

C

o

C

(Distance >0.063 in. (1.6mm) from Case, 10s Max)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

DSSID

GS(TH)VGS

= 1mA, VGS = 0V 60 - - V

= VDS,

ID = 1mA

TC = -55oC - - 5.0 V
TC = 25oC 1.5 - 4.0 V
TC = 125oC 0.5 - - V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSS

GSS

VDS = 48V,
VGS = 0V

TC = 25oC--25µA
TC = 125oC - - 250 µA

VGS = ±20V TC = 25oC - - 100 nA

TC = 125oC - - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)12ID

D(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 12V Q
Threshold Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Plateau Voltage V

(PLATEAU)ID

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

r

f

g(12)

g(TH)

gs

gd

ISS
OSS
RSS

JC

θ

JA

θ

= 12V, ID = 70A - - 0.88 V

= 54A,

VGS = 12V
VDD = 30V, ID = 70A,

RL = 0.43Ω, VGS 12V,
RGS = 2.35Ω

TC = 25oC - 0.008 0.012 Ω
TC = 125oC - - 0.022 Ω

- - 40 ns

- - 200 ns

- - 70 ns

- - 40 ns

= 0V to 20V VDD = 30V,

VGS = 0V to 12V - 150 170 nC

ID = 70A

- - 280 nC

VGS = 0V to 2V - - 12 nC

-3543nC

-5981nC

= 70A, VDS = 15V - 7 - V

VDS = 25V, VGS = 0V,
f = 1MHz

- 4850 - pF

- 2200 - pF

- 425 - pF

- - 0.83

o

C/W

--40oC/W

2

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

SD

rr

FSJ055D, FSJ055R

ISD = 70A 0.6 - 1.8 V
ISD = 70A, dISD/dt = 100A/µs - - 250 ns

Electrical Specifications up to 100K RAD T

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV

= 25oC, Unless Otherwise Specified

C

DSS

GS(TH)

GSS
DSS

DS(ON)

DS(ON)12VGS

VGS = 0, ID = 1mA 60 - V
VGS = VDS, ID = 1mA 1.5 4.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = 48V - 25 µA
VGS = 12V, ID = 70A - 0.88 V

= 12V, ID = 54A - 0.012 Ω

DSS

.

Single Event Effects (SEB, SEGR) (Note 4)

ENVIRONMENT (NOTE 5)

ION

TEST SYMBOL

Single Event Effects Safe
Operating Area

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

SEESOA Ni 26 43 -20 60

SPECIES

Br 37 36 -10 60
Br 37 36 -15 48
Br 37 36 -20 36

I6031060
I6031-548
I 60 31 -10 36
I 60 31 -15 24
I 60 31 -20 12

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (µ)

APPLIED V

BIAS (V)

GS

(NOTE 6)

MAXIMUM

VDS BIAS (V)

3