Intersil Corporation FSGYC260R Datasheet
TM
FSGYC260R
Data Sheet May 2000 File Number 4851.1
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFET
Intersil Star*Power Rad Hard
MOSFETs have been specifically
TM
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low r
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100K RADs while maintaining the
guaranteed performance for SEE (Single Event Effects)
which the Intersil FS families have always featured.
The Intersil family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
r
while exhibiting SEE capability at full rated voltage
DS(ON)
up to an LET of 37. Star*Power Gold FETS have been
optimized for SEE and Gate Charge combining SEE
performance to 80% of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
and Gate Charge allowing the
DS(ON)
Features
• 56A, 200V, r
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm
V
up to 80% of Rated Breakdown and
DS
V
of 5V Off-Bias
GS
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
• Photo Current
- 17nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
- Usable to 1E14 Neutrons/cm
DS(ON)
= 0.033Ω
2
2
with
2
Symbol
D
G
S
Packaging
SMD2
DSS
AS
Reliability screening is available as either TXV or Space
equivalent of MIL-S-19500.
Formerly available as type TA45231W.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Engineering Samples FSGYC260D1
100K TXV FSGYC260R3
100K Space FSGYC260R4
1
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Star*Power™ is a trademark of Intersil Corporation.
FSGYC260R
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
FSGYC260R UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
DGR
200 V
200 V
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
D
D
DM
GS
56 A
36 A
200 A
±30 V
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
208 W
83 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
AS
S
SM
L
110 A
56 A
200 A
-55 to 150
300
o
C
o
C
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) 3.3 (Typical) g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
DSSID
GS(TH)VGS
= 1mA, VGS = 0V 200 - - V
= VDS,
ID = 1mA
TC = -55oC - - 5.5 V
TC = 25oC 2.0 - 4.5 V
TC = 125oC 1.0 - - V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
DSS
GSS
VDS = 160V,
VGS = 0V
TC = 25oC--25µA
TC = 125oC - - 250 µA
VGS = ±30V TC = 25oC - - 100 nA
TC = 125oC - - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r
Turn-On Delay Time t
DS(ON)VGS
DS(ON)12ID
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Gate Charge at 20V Q
Threshold Gate Charge Q
Plateau Voltage V
(PLATEAU)ID
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
r
f
g(12)
gs
gd
g(20)
g(TH)
ISS
OSS
RSS
JC
θ
= 12V, ID = 56A - - 1.96 V
= 36A,
VGS = 12V
VDD = 100V, ID = 56A,
RL = 1.8Ω, VGS = 12V,
RGS = 2.35Ω
TC = 25oC - 0.026 0.033 Ω
TC = 125oC - - 0.066 Ω
- - 35 ns
- - 120 ns
- - 60 ns
- - 15 ns
VGS = 0V to 12V VDD = 100V,
ID = 56A
- 100 115 nC
-5060nC
-2030nC
VGS = 0V to 20V - 160 - nC
VGS = 0V to 2V - 12 - nC
= 56A, VDS = 15V - 7.5 - V
VDS = 25V, VGS = 0V,
f = 1MHz
- 5900 - pF
- 1000 - pF
-30-pF
- - 0.6
o
C/W
2
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
SD
rr
RR
FSGYC260R
ISD = 56A - - 1.2 V
ISD = 56A, dISD/dt = 100A/µs - - 375 ns
- 4.6 - µC
Electrical Specifications up to 100K RAD T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS
Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r
DS(ON)12VGS
DSS
GS(TH)VGS
GSS
DSS
DS(ON)VGS
VGS = 0, ID = 1mA 200 - V
= VDS, ID = 1mA 2.0 4.5 V
VGS = ±30V, VDS = 0V - 100 nA
VGS = 0, VDS = 160V - 25 µA
= 12V, ID = 56A - 1.96 V
= 12V, ID = 36A - 0.033 Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. In situ Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV
DSS
.
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST SYMBOL
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Single Event Effects Safe Operating Area SEESOA Br 37 36 -20 200
I 60 32 -10 200
Au 82 28 -5 160
Au 82 28 -10 120
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDSBIAS (V)
Performance Curves Unless Otherwise Specified
LET = 37MeV/mg/cm
LET = 60MeV/mg/cm2, RANGE = 32µ
LET = 82MeV/mg/cm
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
200
160
(V)
120
DS
V
80
40
TEMP = 25oC
0
0 -10
-5
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. TYPICAL SEE SIGNATURE CURVE
2
, RANGE = 36µ
2
, RANGE = 28µ
-15
(V)
V
GS
-20 -25
(V)
DS
V
240
200
160
120
80
40
0
LET = 82 GOLD
LET = 37 BROMINE
LET = 60 IODINE
V
(V)
GS
-300 -5 -10 -15 -20 -25
3
-35 -40
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