Intersil Corporation FSF9250R, FSF9250D Datasheet

June 1998

FSF9250D,

FSF9250R

15A, -200V, 0.290 Ohm, Rad Hard,

SEGR Resistant, P-Channel Power MOSFETs

Features

• 15A, -200V, r

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm
V

up to 80% of Rated Breakdown and

DS

V

of 10V Off-Bias

GS

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 12nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

DS(ON)

= 0.290Ω

2

2

with

DSS

DM

2

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K Commercial FSF9250D1
10K TXV FSF9250D3
100K Commercial FSF9250R1
100K TXV FSF9250R3
100K Space FSF9250R4

Description

The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif­ically designed for commercial and military space applica­tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu­lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi­ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc­ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula­tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.

Symbol

D

G

Formerly available as type TA17757.

Package

TO-254AA

G

S

CAUTION: Beryllia Warning per MIL-S-19500

refer to package specifications.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

3-215

S

D

File Number 4090.2

FSF9250D, FSF9250R

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

FSF9250D, FSF9250R UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

-200 V

-200 V

Continuous Drain Current

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

D
D

DM

GS

15 A

9A

45 A

±20 V

Maximum Power Dissipation

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T
T

125 W

50 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.00 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

L

45 A
15 A
45 A

-55 to 150
300

o

C

o

C

(Distance >0.063in (1.6mm) from Case, 10s Max)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

DSSID

GS(TH)VGS

= 1mA, VGS = 0V -200 - - V

= VDS,

ID = 1mA

TC = -55oC - - -7.0 V
TC = 25oC -2.0 - -6.0 V
TC = 125oC -1.0 - - V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSS

GSS

VDS = -160V,
VGS = 0V

TC = 25oC--25µA
TC = 125oC - - 250 µA

VGS = ±20V TC = 25oC - - 100 nA

TC = 125oC - - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)12ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 12V Q
Threshold Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Plateau Voltage V

(PLATEAU)ID

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

r

f

g(12)

g(TH)

gs

gd

ISS
OSS
RSS

JC

θ

JA

θ

= -12V, ID = 15A - - -4.57 V

= 9A,

VGS = -12V

VDD = -100V, ID = 15A,
RL = 6.67Ω, VGS = -12V,
RGS = 4.7Ω

TC = 25oC - 0.210 0.290 Ω
TC = 125oC - - 0.513 Ω

- - 120 ns

- - 160 ns

- - 280 ns

- - 120 ns

= 0V to -20V VDD = -100V,

VGS = 0V to -12V - 120 150 nC

ID = 15A

- - 240 nC

VGS = 0V to -2V - - 9.8 nC

-2232nC

-4967nC

= 15A, VDS = -15V - -6 - V

VDS = -25V, VGS = 0V,
f = 1MHz

- 3500 - pF

- 630 - pF

- 150 - pF

- - 1.00

o

C/W

--48oC/W

3-216

FSF9250D, FSF9250R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

SD

rr

Electrical Specifications up to 100K RAD T

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BV

Single Event Effects (SEB, SEGR) (Note 4)

TEST SYMBOL

Single Event Effects Safe Operating
Area

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

ISD = 15A -0.6 - -1.8 V
ISD = 15A, dISD/dt = 100A/µs - - 300 ns

= 25oC, Unless Otherwise Specified

C

DSS

GS(TH)VGS

GSS
DSS

DS(ON)VGS

DS(ON)12VGS

VGS = 0, ID = 1mA -200 - V

= VDS, ID = 1mA -2.0 -6.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = -160V - 25 µA

= -12V, ID = 15A - -4.57 V

= -12V, ID = 9A - 0.290 Ω

.

DSS

ENVIRONMENT (NOTE 5)

APPLIED

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (µ)

VGS BIAS

SEESOA Ni 26 43 20 -200

Br 37 36 5 -200
Br 37 36 10 -160
Br 37 36 15 -100
Br 37 36 20 -40

(V)

(NOTE 6)

MAXIMUM

VDS BIAS

(V)

Typical Performance Curves

LET = 26MeV/mg/cm
LET = 37MeV/mg/cm2, RANGE = 36µ

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

-200

-160

(V)

-120

DS

V

-80

-40

TEMP = 25oC

0

0101520255

VGS (V)

Unless Otherwise Specified

2

, RANGE = 43µ

1E-3

1E-4

1E-5

1E-6

LIMITING INDUCTANCE (HENRY)

1E-7

-30
DRAIN SUPPLY (V)

ILM = 10A

30A

100A

300A

-300-100-10

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

GAMMA DOT CURRENT TO I

AS

3-217

-1000