Intersil Corporation FRX130R, FRX130H, FRX130D Datasheet
April 1998
FRX130D, FRX130R,
FRX130H
Radiation Hardened
N-Channel Power MOSFETs
Features
• 6A, 100V, r
• Second Generation Rad Hard MOSFET Results From
New Design Concepts
• Gamma
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Defined End-Point Specs at 300K RAD (Si) and
1000K RAD (Si)
- Performance Permits Limited Use to 3000K RAD (Si)
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
• Photo Current
- 1.50nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
- Usable to 3E14 Neutrons/cm
DS(ON)
= 0.180Ω
DSS
DM
2
2
Ordering Information
PART NUMBER PACKAGE BRAND
FRX130D1 18 Ld CLCC FRX130D1
FRX130D3 18 Ld CLCC FRX130D3
FRX130R1 18 Ld CLCC FRX130R1
FRX130R3 18 Ld CLCC FRX130R3
FRX130R4 18 Ld CLCC FRX130R4
FRX130H4 18 Ld CLCC FRX130H4
Description
The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and
P-Channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25mΩ. Total
dose hardness is offered at 100K RAD (Si) and 1000K RAD
(Si) with neutron hardness ranging from 1E13n/cm
500V product to 1E14n/cm
hardness (GAMMA DOT) exists for rates to 1E9 without
current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the ver tical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and
neutron (n
also directed to enhance survival to heavy ion (SEU) and/or
dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages
other than shown above. Reliability screening is available
as either non TX (commercial), TX equivalent of MIL-S19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability
Marketing group for any desired deviations from the data
sheet.
o
) exposures. Design and processing efforts are
2
for 100V product. Dose rate
2
for
Symbol
D
G
S
Package
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
1
18 LEAD CLCC
File Number 3144.3
FRX130D, FRX130R, FRX130H
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
FRX130D, R, H UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DM
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
D
T
T
100 V
100 V
6A
4A
18 A
±20 V
11.4 W
4.5 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.09 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJC, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
AS
S
SM
L
18 A
6A
18 A
-55 to 150
300
o
C
o
C
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Gate-Body Leakage Forward I
Gate-Body Leakage Reverse I
Zero Gate Voltage Drain Current I
GS(TH)ID
GSSF
GSSR
DSS1
I
DSS2
I
DSS3
Rated Avalanche Current I
Drain to Source On-State Volts V
Drain to Source On Resistance r
Turn-On Delay Time t
DS(ON)VGS
DS(ON)
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Gate-Charge Threshold Q
Gate-Charge Total Q
Plateau Voltage V
Gate-Charge Source Q
Gate-Charge Drain Q
Diode Forward Voltage V
Reverse Recovery Time t
Junction To Case R
Junction To Ambient R
DSSID
AR
r
f
g(TH)
g(ON)
gM
GP
gS
gD
SD
rr
θJC
θJA
= 1mA, VGS = 0V 100 - - V
= 1mA, VDS = V
GS
2.0 4.0 V
VGS = +20V - 100 nA
VGS = -20V - 100 nA
VDS = 100V, VGS = 0
VDS = 80V, VGS = 0
VDS = 80V, VGS = 0, TC = 125oC
-
-
-
-1
0.025
0.25
µA
Time = 20µs--18A
= 10V, ID = 6A - - 1.130 V
VGS = 10V, ID = 4A - - 0.180 Ω
VDD = 50V, ID = 6A - - 30
Pulse Width = 3µs - - 100
ns
Period = 300µs, Rg = 25Ω - - 200
0 ≤ VGS≤ 10 (See Test Circuit) - - 100
1-4
VDD = 50V, ID = 6A
I
= I
GS1
GS2
0 ≤ VGS≤ 20
17-70
32 - 128
3 - 12 V
ncGate-Charge On State Q
3-14
nc
8-32
ID = 6A, VGD = 0 0.6 - 1.8 V
I = 6A; di/dt = 100A/µs - - 400 ns
--11
o
C/W
Free Air Operation - - 250
2
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