Intersil Corporation FRS9130R, FRS9130H, FRS9130D Datasheet

June 1998

FRS9130D, FRS9130R,

FRS9130H

6A, -100V, 0.565 Ohm, Rad Hard,

P-Channel Power MOSFETs

Features

• 6A, -100V, RDS(on) = 0.565Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current - 1.50nA Per-RAD(Si)/sec Typically

• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

2

2

Description

The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13n/cm
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur­rent limiting.

This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

2

for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness

Package

TO-257AA

CAUTION: Beryllia Warning per MIL-S-19500

refer to package specifications.

Symbol

o

)

This part may be supplied as a die or in various packages other than shown above .
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.

Absolute Maximum Ratings (TC = +25

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS -100 V

Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -100 V

Continuous Drain Current

TC = +25

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 18 A

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation

TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 18 A

Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 6 A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 18 A

Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

o

C) Unless Otherwise Specified

FRS9130D, R, H UNITS

6
4

50
20

0.40

A
A

W
W

W/oC

o

C

o

C

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

4-1

File Number 3240.1

FRS9130D, FRS9130R, FRS9130H

Pre-Radiation Electrical Specifications TC = +25

o

C, Unless Otherwise Specified

LIMITS

PARAMETER SYMBOL TEST CONDITIONS

Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA -100 - V
Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA -2.0 -4.0 V
Gate-Body Leakage Forward IGSSF VGS = -20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = +20V - 100 nA
Zero-Gate Voltage

Drain Current

IDSS1
IDSS2
IDSS3

VDS = -100V, VGS = 0
VDS = -80V, VGS = 0
VDS = -80V, VGS = 0, TC = +125oC

-

-

-

1

0.025

0.25
Rated Avalanche Current IAR Time = 20µs - 18 A
Drain-Source On-State Volts VDS(on) VGS = -10V, ID = 6A - -3.56 V
Drain-Source On Resistance RDS(on) VGS = -10V, ID = 4A - 0.565 Ω
Turn-On Delay Time td(on) VDD = -50V, ID = 6A - 38
Rise Time tr Pulse Width = 3µs - 176
Turn-Off Delay Time td(off) Period = 300µs, Rg = 25Ω - 126
Fall Time tf 0 ≤ VGS ≤ 10 (See Test Circuit) - 74
Gate-Charge Threshold QG(th)

Gate-Charge Total QGM 33 132

VDD = -50V, ID = 6A

14

IGS1 = IGS2

Plateau Voltage VGP -3 -12 V

0 ≤ VGS ≤ 20

Gate-Charge Source QGS 3 13
Gate-Charge Drain QGD 6 26
Diode Forward Voltage VSD ID =6A, VGD = 0 -0.6 -1.8 V
Reverse Recovery Time TT I = 6A; di/dt = 100A/µs - 300 ns
Junction-To-Case Rθjc - 2.5
Junction-To-Ambient Rθja Free Air Operation - 60

UNITSMIN MAX

o

mA

ns

ncGate-Charge On State QG(on) 16 66

nc

C/W

0V

V

GS

= -12V

ELECTRONIC SWITCH OPENS

WHEN I

V

DD

R

L

V

DS

VARY t

TO OBTAIN

DUT

0V

R

GS

P

REQUIRED PEAK I

t

P

VGS≤ 20V

CURRENT

TRANSFORMER

50Ω

AS

V

DS

L

+

I

AS

-

50Ω

DUT

IS REACHED

AS

FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT

4-2

+

V

DD

-

50V-150V