Intersil Corporation FRS140R, FRS140H, FRS140D Datasheet
June 1998
FRS140D, FRS140R,
FRS140H
17A, 100V, 0.145 Ohm, Rad Hard,
N-Channel Power MOSFETs
Features
• 17A, 100V, RDS(on) = 0.145Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 3.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm
- Usable to 3E14 Neutrons/cm
2
2
Description
The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dose
hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness
ranging from 1E13n/cm
rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and
2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor
of the vertical DMOS (VDMOS) structure. It is specially designed and processed
to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEU) and/or dose rate (GAMMA DOT) exposure.
2
for 500V product to 1E14n/cm2 for 100V product. Dose
Package
TO-257AA
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
Symbol
o
)
This part may be supplied as a die or in various packages other than shown
above. Reliability screening is available as either non TX (commercial), TX
equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for
any desired deviations from the data sheet.
Absolute Maximum Ratings (TC = +25
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 100 V
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V
Continuous Drain Current
TC = +25
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 51 A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation
TC = +25
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 51 A
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 17 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 51 A
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
o
C) Unless Otherwise Specified
FRS140D, R, H UNITS
17
11
75
30
0.60
A
A
W
W
W/oC
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
4-1
File Number 3254.2
FRS140D, FRS140R, FRS140H
Pre-Radiation Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
LIMITS
PARAMETER SYMBOL TEST CONDITIONS
Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA 100 - V
Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA 2.0 4.0 V
Gate-Body Leakage Forward IGSSF VGS = +20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = -20V - 100 nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 100V, VGS = 0
VDS = 80V, VGS = 0
VDS = 80V, VGS = 0, TC = +125oC
-
-
-
1
0.025
0.25
Rated Avalanche Current IAR Time = 20µs - 51 A
Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 17A - 2.59 V
Drain-Source On Resistance RDS(on) VGS = 10V, ID = 11A - 0.145 Ω
Turn-On Delay Time td(on) VDD = 50V, ID = 17A - 60
Rise Time tr Pulse Width = 3µs - 320
Turn-Off Delay Time td(off) Period = 300µs, RG = 25Ω - 290
Fall Time tf 0 ≤ VGS ≤ 10 (See Test Circuit) - 260
Gate-Charge Threshold QG(th)
Gate-Charge Total QGM 60 240
VDD = 50V, ID = 17A
16
IGS1 = IGS2
Plateau Voltage VGP 3 14 V
0 ≤ VGS≤ 20
Gate-Charge Source QGS 5 22
Gate-Charge Drain QGD 18 74
Diode Forward Voltage VSD ID = 17A, VGD = 0 0.6 1.8 V
Reverse Recovery Time TT I = 17A; di/dt = 100A/µs - 800 ns
Junction-To-Case Rθjc - - 1.67
Junction-To-Ambient Rθja Free Air Operation - 60
UNITSMIN MAX
o
mA
ns
ncGate-Charge On State QG(on) 32 130
nc
C/W
0V
VGS = 12V
ELECTRONIC SWITCH OPENS
50Ω
L
WHEN I
V
DS
V
DD
R
L
V
DS
VARY t
TO OBTAIN
DUT
R
GS
0V
P
REQUIRED PEAK I
VGS≤ 20V
t
P
CURRENT
TRANSFORMER
AS
50Ω
+
I
AS
-
DUT
IS REACHED
AS
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-2
+
V
DD
-
50V-150V
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