Intersil Corporation FRM9230R, FRM9230H, FRM9230D Datasheet
June 1998
FRM9230D , FRM9230R,
FRM9230H
4A, -200V, 1.30 Ohm, Rad Hard,
P-Channel Power MOSFETs
Features
• 4A, -200V, RDS(on) = 1.30Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 3nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm
- Usable to 1E14 Neutrons/cm
2
2
Description
The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types
with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.
Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron
hardness ranging from 1E13n/cm
uct. Dose rate hardness (GAMMA DOT) e xists f or r ates to 1E9 without current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
2
for 500V product to 1E14n/cm2 for 100V prod-
Package
Symbol
o
)
TO-204AA
D
G
S
This part may be supplied as a die or in various packages other than shown above .
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Absolute Maximum Ratings (TC = +25
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS -200 V
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -200 V
Continuous Drain Current
TC = +25
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 12 A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 12 A
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 4 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 12 A
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
o
C) Unless Otherwise Specified
FRM9230D, R, H UNITS
4
2
75
30
0.60
A
A
W
W
W/oC
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
4-1
File Number 3263.2
FRM9230D, FRM9230R, FRM9230H
Pre-Radiation Electrical Specifications TC = +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER SYMBOL TEST CONDITIONS
UNITSMIN MAX
Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA -200 - V
Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA -2.0 -4.0 V
Gate-body Leakage Forward IGSSF VGS = -20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = +20V - 100 nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = -200V, VGS = 0
VDS = -160V, VGS = 0
VDS = -160V, VGS = 0, TC = +125oC
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current IAR Time = 20µs - 12 A
Drain-Source On-State Volts VDS(on) VGS = -10V, ID = 4A - -5.46 V
Drain-source On Resistance RDS(on) VGS = -10V, ID = 2A - 1.30 Ω
Turn-On Delay Time td(on) VDD = -100V, ID = 4A - 46
Rise Time tr Pulse Width = 3µs-74
ns
Turn-Off Delay Time td(off) Period = 300µs, Rg = 25Ω - 110
Fall Time tf 0 ≤ VGS ≤ 10 (See Test Circuit) - 54
Gate-Charge Threshold QG(th)
14
ncGate-Charge On State QG(on) 14 58
Gate-Charge Total QGM 30 120
VDD = -100V, ID = 4A
IGS1 = IGS2
Plateau Voltage VGP -3 -12 V
0 ≤ VGS ≤ 20
Gate-Charge Source QGS 3 12
nc
Gate-Charge Drain QGD 5 20
Diode Forward Voltage VSD ID = 4A, VGD = 0 -0.6 -1.8 V
Reverse Recovery Time TT I = 4A; di/dt = 100A/µs - 400 ns
Junction-To-Case Rθjc - 1.67
o
C/W
Junction-To-Ambient Rθja Free Air Operation - 60
V
DD
R
L
0V
V
GS
= -12V
R
GS
DUT
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
ELECTRONIC SWITCH OPENS
WHEN I
V
DS
L
50Ω
+
I
AS
-
50Ω
CURRENT
TO OBTAIN
P
t
P
VGS≤ 20V
TRANSFORMER
AS
V
DS
VARY t
REQUIRED PEAK I
0V
DUT
IS REACHED
AS
+
V
DD
-
50V-150V
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-2
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