Intersil Corporation FRM9130R, FRM9130H, FRM9130D Datasheet
June 1998
FRM9130D , FRM9130R,
FRM9130H
6A, -100V, 0.550 Ohm, Rad Hard,
P-Channel Power MOSFETs
Features
• 6A, -100V, RDS(on) = 0.550Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 1.50nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm
- Usable to 3E14 Neutrons/cm
2
2
Description
The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13n/cm
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
2
for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness
Package
Symbol
o
)
TO-204AA
D
G
S
This part may be supplied as a die or in various packages other than shown above .
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Absolute Maximum Ratings (TC = +25
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS -100 V
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -100 V
Continuous Drain Current
TC = +25
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 18 A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 18 A
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 6 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 18 A
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
o
C) Unless Otherwise Specified
FRM9130D, R, H UNITS
6
4
75
30
0.60
A
A
W
W
W/oC
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
4-1
File Number 3262.2
FRM9130D, FRM9130R, FRM9130H
Pre-Radiation Electrical Specifications TC = +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER SYMBOL TEST CONDITIONS
Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA -100 - V
Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA -2.0 -4.0 V
Gate-body Leakage Forward IGSSF VGS = -20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = +20V - 100 nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = -100V, VGS = 0
VDS = -80V, VGS = 0
VDS = -80V, VGS = 0, TC = +125oC
-
-
-
1
0.025
0.25
Rated Avalanche Current IAR Time = 20µs - 18 A
Drain-Source On-State Volts VDS(on) VGS = -10V, ID = 6A - -3.47 V
Drain-source On Resistance RDS(on) VGS = -10V, ID = 4A - .550 Ω
Turn-On Delay Time td(on) VDD = -50V, ID = 6A - 48
Rise Time tr Pulse Width = 3µs - 220
Turn-Off Delay Time td(off) Period = 300µs, Rg = 25Ω - 128
Fall Time tf 0 ≤ VGS ≤ 10 (See Test Circuit) - 74
Gate-Charge Threshold QG(th)
Gate-Charge Total QGM 33 134
VDD = -50V, ID = 6A
14
IGS1 = IGS2
Plateau Voltage VGP -3 -12 V
0 ≤ VGS ≤ 20
Gate-Charge Source QGS 3 12
Gate-Charge Drain QGD 7 28
Diode Forward Voltage VSD ID = 6A, VGD = 0 -0.6 -1.8 V
Reverse Recovery Time TT I = 6A; di/dt = 100A/µs - 300 ns
Junction-To-Case Rθjc - 1.67
Junction-To-Ambient Rθja Free Air Operation - 60
UNITSMIN MAX
o
mA
ns
ncGate-Charge On State QG(on) 16 66
nc
C/W
V
DD
R
L
0V
V
GS
= -12V
R
GS
DUT
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
ELECTRONIC SWITCH OPENS
WHEN I
V
DS
L
50Ω
+
I
AS
-
50Ω
V
DS
VARY t
TO OBTAIN
P
REQUIRED PEAK I
0V
t
P
VGS≤ 20V
CURRENT
TRANSFORMER
AS
DUT
IS REACHED
AS
+
V
DD
-
50V-150V
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-2
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