Intersil Corporation FRK264R, FRK264H, FRK264D Datasheet

June 1998

FRK264D, FRK264R,

FRK264H

34A, 250V, 0.120 Ohm, Rad Hard,

N-Channel Power MOSFETs

Features

• 34A, 250V, RDS(on) = 0.120Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current - 22.0nA Per-RAD(Si)/sec Typically

• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

2

2

Description

Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13n/cm
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur­rent limiting.

This MOSFETisan enhancement-mode silicon-gate powerfield effect transistorof
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

2

for 500V product to 1E14n/cm2for 100V product. Dose rate hardness

Package

Symbol

o

)

TO-204AE

This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.

Absolute Maximum Ratings (TC = +25

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 250 V

Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 250 V

Continuous Drain Current

TC = +25

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 100 A

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation

TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 100 A

Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 34 A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 100 A

Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

o

C) Unless Otherwise Specified

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FRK264D, R, H UNITS

34
21

300
120

2.40

File Number 3233.1

A
A

W
W

W/oC

o

C

o

C

FRK264D, FRK264R, FRK264H

Pre-Radiation Electrical Specifications TC = +25

o

C, Unless Otherwise Specified

LIMITS

PARAMETER SYMBOL TEST CONDITIONS

Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA 250 - V
Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA 2.0 4.0 V
Gate-Body Leakage Forward IGSSF VGS = +20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = -20V - 100 nA
Zero-Gate Voltage

Drain Current

IDSS1
IDSS2
IDSS3

VDS = 250V, VGS = 0
VDS = 200V, VGS = 0
VDS = 200V, VGS = 0, TC = +125

-

o

C

-

-

1

0.025

0.25
Rated Avalanche Current IAR Time = 20µs - 100 A
Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 34A - 4.28 V
Drain-Source On Resistance RDS(on) VGS = 10V, ID = 21A - 0.120 Ω
Turn-On Delay Time td(on) VDD = 125V, ID = 34A - 150
Rise Time tr Pulse Width = 3µs - 800
Turn-Off Delay Time td(off) Period = 300µs, Rg = 10Ω - 700
Fall Time tf 0 ≤ VGS ≤ 10 (See Test Circuit) - 500
Gate-Charge Threshold QG(th)

Gate-Charge Total QGM 188 754

VDD = 125V, ID = 34A

628

IGS1 = IGS2

Plateau Voltage VGP 3 16 V

0 ≤ VGS ≤ 20

Gate-Charge Source QGS 27 110
Gate-Charge Drain QGD 44 178
Diode Forward Voltage VSD ID = 34A, VGD = 0 0.6 1.8 V
Reverse Recovery Time TT I = 34A; di/dt = 100A/µs - 2000 ns
Junction-To-Case Rθjc - 0.42
Junction-To-Ambient Rθja Free Air Operation - 30

UNITSMIN MAX

o

mA

ns

ncGate-Charge On State QG(on) 93 372

nc

C/W

0V

VGS = 12V

ELECTRONIC SWITCH OPENS

50Ω

L

WHEN I

V

DS

V

DD

R

L

V

DS

VARY t

TO OBTAIN

DUT

R

GS

0V

P

REQUIRED PEAK I

VGS≤ 20V

t

P

CURRENT

TRANSFORMER

AS

50Ω

+

I

AS

-

DUT

IS REACHED

AS

FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT

4-2

+

V

DD

-

50V-150V

FRK264D, FRK264R, FRK264H

Post-Radiation Electrical Specifications TC = +25

PARAMETER SYMBOL TYPE TEST CONDITIONS

Drain-Source
Breakdown Volts

Gate-Source
Threshold Volts

Gate-Body
Leakage Forward

Gate-Body
Leakage Reverse

Zero-Gate Voltage
Drain Current

Drain-Source
On-State Volts

(Note 4, 6) BVDSS FRK264D, R VGS = 0, ID = 1mA 250 - V

(Note 5, 6) BVDSS FRK264H VGS = 0, ID = 1mA 238 - V

(Note 4, 6) VGS(th) FRK264D, R VGS = VDS, ID = 1mA 2.0 4.0 V

(Note 3, 5, 6) VGS(th) FRK264H VGS = VDS, ID = 1mA 1.5 4.5 V

(Note 4, 6) IGSSF FRK264D, R VGS = 20V, VDS = 0 - 100 nA

(Note 5, 6) IGSSF FRK264H VGS = 20V, VDS = 0 - 200 nA

(Note 2, 4, 6) IGSSR FRK264D, R VGS = -20V, VDS = 0 - 100 nA

(Note 2, 5, 6) IGSSR FRK264H VGS = -20V, VDS = 0 - 200 nA

(Note 4, 6) IDSS FRK264D, R VGS = 0, VDS = 200V - 25 µA

(Note 5, 6) IDSS FRK264H VGS = 0, VDS = 200V - 100 µA

(Note 1, 4, 6) VDS(on) FRK264D, R VGS = 10V, ID = 34A - 4.28 V

(Note 1, 5, 6) VDS(on) FRK264H VGS = 16V, ID = 34A - 6.43 V

o

C, Unless Otherwise Specified

LIMITS

UNITSMIN MAX

Drain-Source
On Resistance

NOTES:

1. Pulse test, 300µs max

2. Absolute value

3. Gamma = 300KRAD(Si)

4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13

5. Gamma = 1000KRAD(Si). Neutron = 1E13

6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS

7. Gamma data taken 6/15/90 on TA 17663 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401

8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989

9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988

(Note 1, 4, 6) RDS(on) FRK264D, R VGS = 10V, ID = 21A - 0.120 Ω

(Note 1, 5, 6) RDS(on) FRK264H VGS = 14V, ID = 21A - 0.180 Ω

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