Intersil Corporation FRF9150R, FRF9150H, FRF9150D Datasheet
June 1998
FRF9150D, FRF9150R,
FRF9150H
23A, -100V, 0.140 Ohm, Rad Hard,
P-Channel Power MOSFETs
Features
• 23A, -100V, r
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-RAD Specifications to 100K RAD (Si)
• Gamma Dot - Survives 3E9 RAD (Si)/s at 80% BV
• Photo Current - 7.0nA Per-RAD (Si)/s Typically
• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm
= 0.140Ω
DS(ON)
- Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si)
- Performance Permits Limited Use to 3000K RAD (Si)
Typically
- Survives 2E12 Typically If Current Limited to IDM
- Usable to 3E14 Neutrons/cm
DSS
2
2
Description
Intersil Corporation has designed a series of SECOND GENERATION hardened
power MOSFETs of both N and P channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness
is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging
from 1E13n/cm
ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with
current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
2
for 500V product to 1E14n/cm2 for 100V product. Dose rate hard-
Package
TO-254AA
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
Symbol
D
o
)
G
G
S
D
This part may be supplied as a die or in various packages other than shown above .
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for
any desired deviations from the data sheet.
Absolute Maximum Ratings T
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . .I
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, T
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
= +25oC, Unless Otherwise Specified
C
DS
DGR
DM
GS
LM
SM
STG
S
FRF9150D, R, H UNITS
-100 V
-100 V
D
D
S
L
23
15
69 A
±20 V
125
50
1.00
69 A
23 A
69 A
-55 to +150
300
A
A
W
W
W/oC
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
4-1
File Number 3243.2
FRF9150D, FRF9150R, FRF9150H
Pre-Radiation Electrical Specifications T
PARAMETER SYMBOL TEST CONDITIONS
Drain-Source Breakdown Volts BV
Gate-Threshold Volts V
Gate-Body Leakage Forward I
Gate-Body Leakage Reverse I
Zero-Gate Voltage
Drain Current
Rated Avalanche Current I
Drain-Source On-State Volts V
Drain-Source On Resistance r
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate-Charge Threshold Q
Gate-Charge Total Q
Plateau Voltage V
Gate-Charge Source Q
Gate-Charge Drain Q
Diode Forward Voltage V
Reverse Recovery Time t
Junction-To-Case R
Junction-To-Ambient R
DSS
GS(TH)
GSSF
GSSR
I
DSS1
I
DSS2
I
DSS3
AR
DS(ON)
DS(ON)
D(ON)
R
D(OFF)
F
G(TH)
G(ON)
GM
GP
GS
GD
SD
T
θJC
θJA
= +25oC, Unless Otherwise Specified
C
LIMITS
VGS = 0, ID = 1mA -100 - V
VDS = VGS, ID = 1mA -2.0 -4.0 V
VGS = -20V - 100 nA
VGS = +20V - 100 nA
VDS = -100V, VGS = 0
VDS = -80V, VGS = 0
VDS = -80V, VGS = 0, TC = +125oC
-
-
-
1
0.025
0.25
Time = 20µs - 69 A
VGS = -10V, ID = 23A - -3.38 V
VGS = -10V, ID = 15A - 0.140 Ω
VDD = -50V, ID = 23A - 170
Pulse Width = 3µs - 620
Period = 300µs, RG = 25Ω - 600
0 ≤ VGS≤ 10 (See Test Circuit) - 242
416
60 240
VDD = -50V, ID = 23A
I
= I
GS1
GS2
0 ≤ VGS≤ 20
126 504
314V
17 68
21 86
ID = 23A, VGD = 0 -0.6 -1.8 V
I = 23A; di/dt = 100A/µs - 700 ns
- 1.0
Free Air Operation - 48
UNITSMIN MAX
o
mA
ns
ncGate-Charge On State Q
nc
C/W
0V
V
GS
= -12V
ELECTRONIC SWITCH OPENS
WHEN I
V
DD
R
L
V
DS
VARY t
TO OBTAIN
DUT
0V
R
GS
P
REQUIRED PEAK I
t
P
VGS≤ 20V
CURRENT
TRANSFORMER
50Ω
AS
V
DS
L
+
I
AS
-
50Ω
DUT
IS REACHED
AS
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-2
+
V
DD
-
50V-150V
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