Intersil Corporation FRE9260R, FRE9260H, FRE9260D Datasheet
June 1998
FRE9260D, FRE9260R,
FRE9260H
19A, -200V, 0.210 Ohm, Rad Hard,
P-Channel Power MOSFETs
Features
• 19A, -200V, RDS(on) = 0.210Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(SI)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 18.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm
- Usable to 1E14 Neutrons/cm
2
2
Description
The Intersil Corporation Sector has designed a series of SECOND GENERA TION
hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose
hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness
ranging from 1E13n/cm
rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and
2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
2
for 500V product to 1E14n/cm2 for 100V product. Dose
Package
Symbol
o
)
TO-258AA
This part may be supplied as a die or in various packages other than shown
above. Reliability screening is a vailab le as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group
for any desired deviations from the data sheet.
Absolute Maximum Ratings (TC = +25
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS -200 V
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -200 V
Continuous Drain Current
TC = +25
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 57 A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 57 A
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 19 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 57 A
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
o
C) Unless Otherwise Specified
FRE9260D, R, H UNITS
19
12
150
60
1.20
A
A
W
W
W/oC
o
C
o
C
File Number 3269.2
1
FRE9260D, FRE9260R, FRE9260H
Pre-Radiation Electrical Specifications TC = +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER SYMBOL TEST CONDITIONS
UNITSMIN MAX
Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA -200 - V
Gate-Treshold Volts VGS(th) VDS = VGS, ID = 1mA -2.0 -4.0 V
Gate-Body Leakage Forward IGSSF VGS = -20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = +20V - 100 nA
Zero-Gate Voltage Drain Current IDSS1
IDSS2
IDSS3
VDS = -200V, VGS = 0
VDS = -160V, VGS = 0
VDS = -160V, VGS = 0, TC = +125oC
-
-
-
1
0.025
0.25
Rated Avalanche Current IAR Time = 20µs - 57 A
Drain-Source On-State Volts VDS(on) VGS = -10V, ID = 19A - -4.19 V
Drain-Source On Resistance RDS(on) VGS = -10V, ID = 12A - 0.210 Ω
Turn-On Delay Time td(on) VDD = -100V, ID = 19A
Rise Time tr - 700
Turn-Off Delay Time td(off) - 400
Pulse Width = 3µs
Period = 300µs Rg = 10Ω
0 ≤ VGS ≤ 10 (See Test Circuit)
- 100 ns
Fall Time tf - 300
Gate-Charge Threshold QG(th) VDD = -100V, ID = 19A
Gate-Charge On State QG(on) 94 376
IGS1 = IGS2
0 ≤ VGS ≤ 20
416nc
Gate-Charge Total QGM 182 728
Plateau Voltage VGP -3 -16 V
Gate-Charge Source QGS 21 86 nc
Gate-Charge Drain QGD 52 210
Diode Forward Voltage VSD ID = 19A, VGD = 0 -0.6 -1.8 V
Reverse Recovery Time TT I = 19A; di/dt = 100A/µs - 1200 ns
Junction-To-Case Rθjc - 0.83
Junction-To-Ambient Rθja Free Air Operation - 48
o
mA
C/W
0V
V
GS
= -12V
ELECTRONIC SWITCH OPENS
WHEN I
V
DD
R
L
V
DS
VARY t
TO OBTAIN
DUT
0V
R
GS
P
REQUIRED PEAK I
t
P
VGS≤ 20V
CURRENT
TRANSFORMER
50Ω
AS
V
DS
L
+
I
AS
-
50Ω
DUT
IS REACHED
AS
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
2
+
V
DD
-
50V-150V
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