Intersil Corporation FRE9160R, FRE9160H, FRE9160D Datasheet

June 1998

FRE9160D, FRE9160R,

FRE9160H

30A, -100V, 0.095 Ohm, Rad Hard,

P-Channel Power MOSFETs

Features

• 30A, -100V, RDS(on) = 0.095Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current - 10.0nA Per-RAD(Si)/sec Typically

• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

2

2

Description

The Intersil Corporation Sector has designed a series of SECOND GENERA TION
hardened power MOSFETs of both N and P channel enhancement types with rat­ings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose
hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness
ranging from 1E13 for 500V product to 1E14 for 100V product. Dose r ate hardness
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur­rent limiting.

This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

Package

Symbol

o

)

TO-258AA

This part may be supplied as a die or in various packages other than shown above .
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for
any desired deviations from the data sheet.

Absolute Maximum Ratings (TC = +25

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS -100 V

Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -100 V

Continuous Drain Current

TC = +25

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 90 A

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation

TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 90 A

Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 30 A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 90 A

Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

o

C) Unless Otherwise Specified

FRE9160D, R, H UNITS

30
19

150

60

1.20

A
A

W
W

W/oC

o

C

o

C

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

1

File Number 3268.2

FRE9160D, FRE9160R, FRE9160H

Pre-Radiation Electrical Specifications TC = +25

o

C, Unless Otherwise Specified

LIMITS

PARAMETER SYMBOL TEST CONDITIONS

Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA -100 - V
Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA -2.0 -4.0 V
Gate-Body Leakage Forward IGSSF VGS = -20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = +20V - 100 nA
Zero-Gate Voltage

Drain Current

IDSS1
IDSS2
IDSS3

VDS = -100V, VGS = 0
VDS = -80V, VGS = 0
VDS = -80V, VGS = 0, TC = +125oC

-

-

-

1

0.025

0.25
Rated Avalanche Current IAR Time = 20µs - 90 A
Drain-Source On-State Volts VDS(on) VGS = -10V, ID = 30A - -2.99 V
Drain-Source On Resistance RDS(on) VGS = -10V, ID = 19A - 0.095 Ω
Turn-On Delay Time td(on) VDD = -50V, ID = 30A - 90
Rise Time tr Pulse Width = 3µs - 440
Turn-Off Delay Time td(off) Period = 300µs, Rg = 10Ω - 250
Fall Time tf 0 ≤ VGS ≤ 10 (See Test Circuit) - 170
Gate-Charge Threshold QG(th)

Gate-Charge Total QGM 180 750

VDD = -50V, ID = 30A

418

IGS1 = IGS2

Plateau Voltage VGP -3 -14 V

0 ≤ VGS ≤ 20

Gate-Charge Source QGS 21 85
Gate-Charge Drain QGD 35 140
Diode Forward Voltage VSD ID = 30A, VGD = 0 -0.6 -1.8 V
Reverse Recovery Time TT I = 30A; di/dt = 100A/µs - 400 ns
Junction-To-Case Rθjc - 0.83
Junction-To-Ambient Rθja Free Air Operation - 48

UNITSMIN MAX

o

mA

ns

ncGate-Charge On State QG(on) 85 350

nc

C/W

0V

V

GS

= -12V

ELECTRONIC SWITCH OPENS

WHEN I

V

DD

R

L

V

DS

VARY t

TO OBTAIN

DUT

0V

R

GS

P

REQUIRED PEAK I

t

P

VGS≤ 20V

CURRENT

TRANSFORMER

50Ω

AS

V

DS

L

+

I

AS

-

50Ω

DUT

IS REACHED

AS

FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT

2

+

V

DD

-

50V-150V