Intersil Corporation FRE460R, FRE460H, FRE460D Datasheet
June 1998
FRE460D, FRE460R,
FRE460H
12A, 500V, 0.410 Ohm, Rad Hard,
N-Channel Power MOSFETs
Features
• 12A, 500V, RDS(on) = 0.410Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 45.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm
- Usable to 3E13 Neutrons/cm
2
2
Description
The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is
offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13n/cm
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
2
for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness
Package
Symbol
o
)
TO-258AA
This part may be supplied as a die or in various packages other than shown
above. Reliability screening is a vailab le as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any
desired deviations from the data sheet.
Absolute Maximum Ratings (TC = +25
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 500 V
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 500 V
Continuous Drain Current
TC = +25
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 36 A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 36 A
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 12 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 36 A
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
o
C) Unless Otherwise Specified
FRE460D, R, H UNITS
12
7
150
60
1.20
A
A
W
W
W/oC
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
4-1
File Number 3261.2
FRE460D, FRE460R, FRE460H
Pre-Radiation Electrical Specifications TC = +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER SYMBOL TEST CONDITIONS
UNITSMIN MAX
Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA 500 - V
Gate-Treshold Volts VGS(th) VDS = VGS, ID = 1mA 2.0 4.0 V
Gate-Body Leakage Forward IGSSF VGS = +20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = -20V - 100 nA
Zero-Gate Voltage Drain Current IDSS1
IDSS2
IDSS3
VDS = 500V, VGS = 0
VDS = 400V, VGS = 0
VDS = 400V, VG65S = 0, TC = +125oC
-
-
-
1
0.025
0.25
Rated Avalanche Current IAR Time = 20µs - 36 A
Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 12A - 5.17 V
Drain-Source On Resistance RDS(on) VGS = 10V, ID = 7A - 0.410 Ω
Turn-On Delay Time td(on) VDD = 250V, ID = 12A
Rise Time tr - 96
Turn-Off Delay Time td(off) - 556
Pulse Width = 3µs
Period = 300µs Rg = 10Ω
0 ≤ VGS ≤ 10 (See Test Circuit)
-88ns
Fall Time tf - 108
Gate-Charge Threshold QG(th) VDD = 250V, ID = 12A
Gate-Charge On State QG(on) 107 430
IGS1 = IGS2
0 ≤ VGS ≤ 20
728nc
Gate-Charge Total QGM 202 808
Plateau Voltage VGP 2 10 V
Gate-Charge Source QGS 19 76 nc
Gate-Charge Drain QGD 43 172
Diode Forward Voltage VSD ID =12A, VGD = 0 0.6 1.8 V
Reverse Recovery Time TT I = 12A; di/dt = 100A/µs - 3000 ns
Junction-To-Case Rθjc - 0.83
Junction-To-Ambient Rθja Free Air Operation - 48
o
mA
C/W
0V
VGS = 12V
ELECTRONIC SWITCH OPENS
50Ω
L
WHEN I
V
DS
V
DD
R
L
V
DS
VARY t
TO OBTAIN
DUT
R
GS
0V
P
REQUIRED PEAK I
VGS≤ 20V
t
P
CURRENT
TRANSFORMER
AS
50Ω
+
I
AS
-
DUT
IS REACHED
AS
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-2
+
V
DD
-
50V-150V
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