Intersil Corporation FRE264R, FRE264H, FRE264D Datasheet
June 1998
FRE264D, FRE264R,
FRE264H
23A, 250V, 0.130 Ohm, Rad Hard,
N-Channel Power MOSFETs
Features
• 23A, 250V, RDS(on) = 0.130Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 22.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm
- Usable to 1E14 Neutrons/cm
2
2
Description
The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is
offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13n/cm
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
2
for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness
Package
Symbol
o
)
TO-258AA
This part may be supplied as a die or in various packages other than shown
above. Reliability screening is a vailab le as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any
desired deviations from the data sheet.
Absolute Maximum Ratings (TC = +25
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 250 V
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 250 V
Continuous Drain Current
TC = +25
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 69 A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 69 A
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 23 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 69 A
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
o
C) Unless Otherwise Specified
FRE264D, R, H UNITS
23
15
150
60
1.20
A
A
W
W
W/oC
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
4-1
File Number 3260.2
FRE264D, FRE264R, FRE264H
Pre-Radiation Electrical Specifications TC = +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER SYMBOL TEST CONDITIONS
UNITSMIN MAX
Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA 250 - V
Gate-Treshold Volts VGS(th) VDS = VGS, ID = 1mA 2.0 4.0 V
Gate-Body Leakage Forward IGSSF VGS = +20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = -20V - 100 nA
Zero-Gate Voltage Drain Current IDSS1
IDSS2
IDSS3
VDS = 250V, VGS = 0
VDS = 200V, VGS = 0
VDS = 200V, VGS = 0, TC = +125oC
-
-
-
1
0.025
0.25
Rated Avalanche Current IAR Time = 20µs - 69 A
Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 23A - 3.14 V
Drain-Source On Resistance RDS(on) VGS = 10V, ID = 15A - 0.130 W
Turn-On Delay Time td(on) VDD = 125V, ID = 23A
Rise Time tr - 158
Turn-Off Delay Time td(off) - 544
Pulse Width = 3µs
Period = 300µs RG = 10Ω
0 ≤ VGS ≤ 10 (See Test Circuit)
-84ns
Fall Time tf - 134
Gate-Charge Threshold QG(th) VDD = 125V, ID = 23A
Gate-Charge On State QG(on) 103 412
IGS1 = IGS2
0 ≤ VGS ≤ 20
522nc
Gate-Charge Total QGM 200 800
Plateau Voltage VGP 3 12 V
Gate-Charge Source QGS 20 80 nc
Gate-Charge Drain QGD 50 200
Diode Forward Voltage VSD ID = 23A, VGD = 0 0.6 1.8 V
Reverse Recovery Time TT I = 23A; di/dt = 100A/µs - 2000 ns
Junction-To-Case Rθjc - 0.83
Junction-To-Ambient Rθja Free Air Operation - 48
o
mA
C/W
0V
VGS = 12V
ELECTRONIC SWITCH OPENS
50Ω
L
WHEN I
V
DS
V
DD
R
L
V
DS
VARY t
TO OBTAIN
DUT
R
GS
0V
P
REQUIRED PEAK I
VGS≤ 20V
t
P
CURRENT
TRANSFORMER
AS
50Ω
+
I
AS
-
DUT
IS REACHED
AS
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-2
+
V
DD
-
50V-150V
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