Intersil Corporation FRE260R, FRE260H, FRE260D Datasheet

June 1998

FRE260D, FRE260R,

FRE260H

31A, 200V, 0.080 Ohm, Rad Hard,

N-Channel Power MOSFETs

Features

• 31A, 200V, RDS(on) = 0.080Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot - Survives 3E9 RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current - 18.0nA Per-RAD(Si)/sec Typically

• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

2

2

Description

The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA
DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEU) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above .
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.

Package

Symbol

o

)

TO-258AA

Absolute Maximum Ratings (TC = +25

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 200 V

Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 200 V

Continuous Drain Current

TC = +25

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 93 A

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation

TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 93 A

Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 31 A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 93 A

Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

| Copyright © Intersil Corporation 1999

o

C) Unless Otherwise Specified

4-1

FRE260D, R, H UNITS

31
19

150

60

1.20

File Number 3259.1

A
A

W
W

W/oC

o

C

o

C

FRE260D, FRE260R, FRE260H

Pre-Radiation Electrical Specifications TC = +25

o

C, Unless Otherwise Specified

LIMITS

PARAMETER SYMBOL TEST CONDITIONS

Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA 200 - V
Gate-Treshold Volts VGS(th) VDS = VGS, ID = 1mA 2.0 4.0 V
Gate-Body Leakage Forward IGSSF VGS = +20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = -20V - 100 nA
Zero-Gate Voltage Drain Current IDSS1

IDSS2
IDSS3

VDS = 200V, VGS = 0
VDS = 160V, VGS = 0
VDS = 160V, VGS = 0,Tc = +125oC

-

-

-

1

0.025

0.25
Rated Avalanche Current IAR Time = 20µs - 93 A
Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 31A - 2.60 V
Drain-Source On Resistance RDS(on) VGS = 10V, ID = 19A - 0.080 Ω
Turn-On Delay Time td(on) VDD = 100V, ID = 31A
Rise Time tr - 250
Turn-Off Delay Time td(off) - 600

Pulse Width = 3µs
Period = 300µs Rg = 10 Ω
0 < VGS < 10 (See Test Circuit)

- 100

Fall Time tf - 300
Gate-Charge Threshold QG(th)

Gate-Charge Total QGM 214 856

VDD = 100V, ID = 31A

624

IGS1 = IGS2

Plateau Voltage VGP 3 12 V

0 < Vgs < 20

Gate-Charge Source QGS 20 80
Gate-Charge Drain QGD 46 184
Diode Forward Voltage VSD ID = 31A, VGD = 0 0.6 1.8 V
Reverse Recovery Time TT I = 31A; di/dt = 100A/µs - 1200 ns
Junction-To-Case Rθjc - - 0.83
Junction-To-Ambient Rθja Free Air Operation - 48

UNITSMIN MAX

o

mA

ns

nsGate-Charge On State QG(on) 110 440

nc

C/W

0V

VGS = 12V

ELECTRONIC SWITCH OPENS

50Ω

L

WHEN I

V

DS

V

DD

R

L

V

DS

VARY t

TO OBTAIN

DUT

R

GS

0V

P

REQUIRED PEAK I

VGS≤ 20V

t

P

CURRENT

TRANSFORMER

AS

50Ω

+

I

AS

-

DUT

IS REACHED

AS

FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT

4-2

+

V

DD

-

50V-150V