Intersil Corporation FRE160H, FRE160D Datasheet

June 1998

FRE160D, FRE160R,

FRE160H

41A, 100V, 0.050 Ohm, Rad Hard,

N-Channel Power MOSFETs

Features

• 41A, 100V, RDS(on) = 0.050Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current - 10nA Per-RAD(Si)/sec Typically

• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

2

2

Description

The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA
DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEU) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above .
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.

Package

Symbol

o

)

TO-258AA

Absolute Maximum Ratings (TC = +25

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 100 V

Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V

Continuous Drain Current

TC = +25

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 100 A

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation

TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 100 A

Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 41 A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 100 A

Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

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C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

| Copyright © Intersil Corporation 1999

o

C) Unless Otherwise Specified

4-37

FRE160D, R, H UNITS

41
26

150

60

1.20

File Number 3258.2

A
A

W
W

W/oC

o

C

o

C

FRE160D, FRE160R, FRE160H

Pre-Radiation Electrical Specifications TC = +25

o

C, Unless Otherwise Specified

LIMITS

PARAMETER SYMBOL TEST CONDITIONS

UNITSMIN MAX

Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA 100 - V
Gate-Treshold Volts VGS(th) VDS = VGS, ID = 1mA 2.0 4.0 V
Gate-Body Leakage Forward IGSSF VGS = +20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = -20V - 100 nA
Zero-Gate Voltage

Drain Current

IDSS1
IDSS2
IDSS3

VDS = 100V, VGS = 0
VDS = 80V, VGS = 0
VDS = 80V, VGS = 0,TC = +125oC

-

-

-

1

0.025

0.25
Rated Avalanche Current IAR Time = 20µs - 100 A
Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 41A - 2.15 V
Drain-Source On Resistance RDS(on) VGS = 10V, ID = 26A - 0.050 Ω
Turn-On Delay Time td(on) VDD = 50V, ID = 41A
Rise Time tr - 700
Turn-Off Delay Time td(off) - 400

Pulse Width = 3µs
Period = 300µs Rg = 10Ω
0 ≤ VGS ≤ 10 (See Test Circuit)

- 100

Fall Time tf - 300
Gate-Charge Threshold QG(th)

Gate-Charge Total QGM 182 728

VDD = 50V, ID = 41A

416

IGS1 = IGS2

Plateau Voltage VGP 3 16 V

0 ≤ VGS ≤ 20

Gate-Charge Source QGS 21 86
Gate-Charge Drain QGD 52 210
Diode Forward Voltage VSD ID = 41A, VGD = 0 0.6 1.8 V
Reverse Recovery Time TT I = 41A; di/dt = 100A/µs - 600 ns
Junction-To-Case Rθjc - - 0.83
Junction-To-Ambient Rθja Free Air Operation - 48

o

mA

ns

nc Gate-Charge On State QG(on)s 94 376

nc

C/W

0V

VGS = 12V

ELECTRONIC SWITCH OPENS

50Ω

L

WHEN I

V

DS

V

DD

R

L

V

DS

VARY t

TO OBTAIN

DUT

R

GS

0V

P

REQUIRED PEAK I

VGS≤ 20V

t

P

CURRENT

TRANSFORMER

AS

50Ω

+

I

AS

-

DUT

IS REACHED

AS

FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT

4-38

+

V

DD

-

50V-150V