The EL8108 is a dual current feedback
operational amplifier designed for
video distribution solutions. This
device features a high drive capability of 450mA while
consuming only 5mA of supply current per amplifier and
operating from a single 5V to 12V supply.
The EL8108 is available in the industry standard 8 Ld SOIC
as well as the thermally-enhanced 16 Ld QFN package. Both
are specified for operation over the full -40°C to +85°C
temperature range. The EL8108 has control pins C0 and C1
for controlling the bias and enable/disable of the outputs.
The EL8108 is ideal for driving multiple video loads while
maintaining linearity.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = T
Electrical SpecificationsV
= +25°C)
A
Ambient Operating Temperature Range . . . . . . . . . .-40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . . . . . .-60°C to +150°C
(EL8108IS only)Supply Current, Maximum SettingAll outputs at mid supply1114.318mA
I
S
Supply VoltageSingle supply4.513V
SUPPLY (EL8108IL ONLY)
I
+ (full power)Positive Supply Current per AmplifierAll outputs at 0V, C0 = C1 = 0V1114.318mA
S
+ (medium power) Positive Supply Current per AmplifierAll outputs at 0V, C0 = 5V, C1 = 0V78.911mA
I
S
I
+ (low power)Positive Supply Current per AmplifierAll outputs at 0V, C0 = 0V, C1 = 5V3.74.55.5mA
S
I
+ (power down) Positive Supply Current per AmplifierAll outputs at 0V, C0 = C1 = 5V0.10.5mA
S
I
I
INH
INL
, C0 or C
, C0 or C
1
1
C0, C1 Input Current, HighC0, C1 = 5V90125160µA
C0, C1 Input Current, LowC0, C1 = 0V-5+5µA
2
Typical Performance Curves
22
VS = ±6V, AV = 5
20
= 100Ω DIFF
R
L
18
16
14
12
10
GAIN (dB)
8
6
4
2
100K
1M
FREQUENCY (Hz)
RF = 500Ω
RF = 750Ω
RF = 1kΩ
10M100M
FIGURE 1. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS R
(FULL POWER MODE)
F
RF = 243Ω
500M
EL8108
22
VS = ±6V, AV = 5
20
= 100Ω DIFF
R
L
18
16
14
12
10
GAIN (dB)
8
6
4
2
100K
1M
RF = 500Ω
RF = 750Ω
RF = 1kΩ
10M100M
FREQUENCY (Hz)
RF = 243Ω
500M
FIGURE 2. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS RF (3/4 POWER MODE)
22
VS = ±6V, AV = 5
20
18
16
14
12
10
GAIN (dB)
8
6
4
2
100K
RL = 100Ω DIFF
RF = 500Ω
RF = 750Ω
1M
FREQUENCY (Hz)
RF = 243Ω
RF = 1kΩ
10M100M
500M
FIGURE 3. DIFFERENTIAL FREQUENCY RESPONSE WITH
28
26
24
22
20
18
16
GAIN (dB)
14
12
10
8
100K
VARIOUS R
VS = ±6V, AV = 10
R
= 100Ω DIFF
L
(1/2 POWER MODE)
F
RF = 750Ω
1M
10M100M
FREQUENCY (Hz)
RF = 243Ω
RF = 500Ω
RF = 1kΩ
500M
FIGURE 5. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS R
(3/4 POWER MODE)
F
28
VS = ±6V, AV = 10
26
R
= 100Ω DIFF
L
24
22
20
18
16
GAIN (dB)
14
12
10
8
100K
1M
FREQUENCY (Hz)
RF = 243Ω
RF = 750Ω
RF = 1kΩ
10M100M
RF = 500Ω
500M
FIGURE 4. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS RF (FULL POWER MODE)
28
VS = ±6V, AV = 10
26
R
= 100Ω DIFF
L
24
22
20
18
16
GAIN (dB)
14
12
10
8
100K
RF = 243Ω
1M
FREQUENCY (Hz)
RF = 1kΩ
10M100M
RF = 500Ω
RF = 750Ω
500M
FIGURE 6. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS RF (1/2 POWER MODE)
3
Typical Performance Curves (Continued)
EL8108
VS=±6V
14
A
=2
V
R
=100Ω DIFF
L
12
10
8
6
4
GAIN (dB)
2
0
-2
100K1M10M100M500M
FREQUENCY (Hz)
RF=248Ω
RF=500Ω
RF=1kΩ
RF=750Ω
FIGURE 7. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS R
-50
VS=±6V
A
=5
V
-55
R
=50Ω DIFF
L
R
=750
F
-60
-65
-70
HD (dB)
-75
-80
-85
123456789
F
EL8108IL
EL8108IS
3rd HD
2nd HD
V
(V)
OP-P
FIGURE 9. DISTORTION BETWEEN EL8108IL vs EL8108IS
AT 2MHz
VS=±6V
8
A
=2
V
R
=500Ω
F
6
4
2
0
-2
-4
NORMALIZED GAIN (dB)
-6
-8
100K1M10M100M500M
FREQUENCY (Hz)
RL=25Ω
RL=50Ω
FIGURE 8. FREQUENCY RESPONSE FOR VARIOUS R
-50
VS=±6V
A
=5
V
-55
R
=50Ω DIFF
L
R
=750
F
-60
-65
HD (dB)
-70
-75
-80
123456789
3rd HD
V
OP-P
2nd HD
(V)
RL=150Ω
EL8108IL
EL8108IS
LOAD
FIGURE 10. DISTORTION BETWEEN EL8108IL vs EL8108IS
AT 3MHz
-40
VS=±6V
=5
A
V
-45
R
=50Ω DIFF
L
=750
R
F
-50
-55
-60
HD (dB)
-65
-70
-75
123456789
3rd HD
V
OP-P
(V)
2nd HD
EL8108IL
EL8108IS
FIGURE 11. DISTORTION BETWEEN EL8108IL vs EL8108IS
AT 5MHz
4
-40
VS=±6V
=5
A
V
R
=50Ω DIFF
L
-45
=750
R
F
-50
HD (dB)
-55
-60
-65
123456789
V
3rd HD
OP-P
(V)
2nd HD
EL8108IL
EL8108IS
FIGURE 12. DISTORTION BETWEEN EL8108IL vs EL8108IS
AT 10MHz
Typical Performance Curves (Continued)
-70
VS=±6V
=5
A
V
-75
=750
R
F
=4V
V
OPP
-80
-85
HD (dB)
-90
-95
3rd HD
2nd HD
EL8108
HD (dB)
-60
-65
-70
-75
-80
-85
VS=±6V
=5
A
V
=750
R
F
V
OPP
=4V
3rd HD
2nd HD
-100
5060708090 100 110 120150
R
LOAD
(Ω)
130 140
FIGURE 13. 2nd AND 3rd HARMONIC DISTORTION vs R
@ 2MHz (EL8108IL)
-50
VS=±6V
=5
A
V
-55
=750
R
F
=4V
V
-60
OPP
-65
-70
HD (dB)
-75
-80
-85
-90
5060708090 100 110 120150
2nd HD
R
LOAD
3rd HD
130 140
(Ω)
FIGURE 15. 2nd AND 3rd HARMONIC DISTORTION vs R
@ 5MHz (EL8108IL)
LOAD
LOAD
-90
5060708090 100 110 120150
FIGURE 14. 2nd AND 3rd HARMONIC DISTORTION vs R
R
LOAD
(Ω)
@ 3MHz (EL8108IL)
-40
-45
-50
-55
-60
HD (dB)
-65
-70
-75
-80
5060708090 100 110 120150
FIGURE 16. 2nd AND 3rd HARMONIC DISTORTION vs R
2nd HD
R
LOAD
3rd HD
(Ω)
@ 10MHz (EL8108IL)
130 140
VS=±6V
=5
A
V
=750
R
F
V
OPP
130 140
=4V
LOAD
LOAD
VS = ±6V, AV = 5
22
= 50Ω
R
L
R
= 750Ω
20
F
18
16
14
12
GAIN (dB)
10
8
6
0
100K
1M
FREQUENCY (Hz)
CL = 47pF
CL = 33pF
CL = 0pF
CL = 22pF
10M100M
500M
FIGURE 17. FREQUENCY RESPONSE WITH VARIOUS C
5
24
VS = ±6V, AV = 5
22
= 50Ω
R
L
= 750Ω
R
20
F
18
16
14
12
GAIN (dB)
10
8
6
4
100K
L
FIGURE 18. FREQUENCY RESPONSE vs VARIOUS CL
1M
FREQUENCY (Hz)
(3/4 POWER MODE)
CL = 47pF
CL = 39pF
CL = 12pF
CL = 0pF
10M100M
500M
Typical Performance Curves (Continued)
24
VS = ±6V, AV = 5
22
R
= 50Ω
L
= 750Ω
R
20
F
18
16
14
12
GAIN (dB)
10
8
6
4
100K
1M
FREQUENCY (Hz)
CL = 12pF
CL = 0pF
10M100M
FIGURE 19. FREQUENCY RESPONSE WITH VARIOUS CL
(1/2 POWER MODE)
CL = 47pF
CL = 37pF
500M
EL8108
-10
-30
-50
A B
B A
1M10M
FREQUENCY (Hz)
CHANNEL SEPARATION (dB)
-70
-90
-110
10K
100K
FIGURE 20. CHANNEL SEPARATION vs FREQUENCY
100M
-10
-30
-50
-70
PSRR (dB)
-90
-110
100K1M10M10M100M
FREQUENCY (Hz)
PSRR+
FIGURE 21. PSRR vs FREQUENCYFIGURE 22. TRANSIMPEDANCE (R
1000
100
EN
IN-
IN+
FREQUENCY (Hz)
0.01
0.001
0.0001
VOLTAGE/CURRENT NOISE (nV/√Hz)(nA/√Hz)
0.1
10
1
10010
1K10K100K1M10M
PSRR-
200M
10M
3M
300K
100K
30K
10K
MAGNITUDE (Ω)
3K
1K
-110
1K10K100K1M10M
VS = ±6V, AV = 1
R
= 750Ω
F
10
1
OUTPUT IMPEDANCE (Ω)
0.1
10K
FREQUENCY (Hz)
100K
FREQUENCY (Hz)
GAIN
1M10M
PHASE
) vs FREQUENCY
OL
100M
100M
FIGURE 23. VOLTAGE AND CURRENT NOISE vs FREQUENCYFIGURE 24. OUTPUT IMPEDANCE vs FREQUENCY
200
150
100
50
0
-50
-100
-150
-200
PHASE (°)
6
Typical Performance Curves (Continued)
EL8108
150
130
120
110
100
90
BW (MHz)
80
70
60
50
3
AV = 5, RF = 750Ω,
= 100Ω DIFF
R
LOAD
FULL POWER MODE
3/4 POWER MODE
3.5
4
1/2 POWER MODE
4.5
±VS (V)
5
5.5
6
0.4
VS=±6V
0.35
0.3
0.25
0.2
0.15
0.1
DIFFERENTIAL GAIN (%)
0.05
FULL POWER MODE
0
1234
1/2 POWER MODE
3/4 POWER MODE
# OF 150Ω LOADS
FIGURE 25. DIFFERENTIAL BANDWIDTH vs SUPPLY VOL TAGEFIGURE 26. DIFFERENTIAL GAIN
0.09
VS=±6V
0.08
0.07
0.06
0.05
0.04
0.03
DIFFERENTIAL PHASE (%)
1/2 POWER MODE
0.02
0.01
1234
FULL POWER MODE
3/4 POWER MODE
# OF 150Ω LOADS
16
14
12
10
8
(mA)
S
I
6
4
2
0
1246
FULL POWER MODE
3/4 POWER MODE
35
(V)
±V
S
1/2 POWER MODE
FIGURE 27. DIFFERENTIAL PHASEFIGURE 28. SUPPLY CURRENT vs SUPPLY VOLTAGE
+IS
-IS
1
0
IB+
-1
-2
-3
INPUT BIAS CURRENT (µA)
-4
-5
0255075100125150
TEMPERATURE (°C)
IB-
1.8K
1.7K
1.6K
1.5K
1.4K
SLEW RATE (V/µs)
1.3K
1.2K
-50-250
255075100125150
TEMPERATURE (°C)
FIGURE 29. INPUT BIAS CURRENT vs TEMPERATUREFIGURE 30. SLEW RATE vs TEMPERATURE
7
Typical Performance Curves (Continued)
EL8108
5
4
3
2
1
OFFSET VOLTAGE (mV)
0
-1
-50-250
255075100125150
TEMPERATURE (°C)
3
2.5
2
1.5
1
TRANSIMPEDANCE (MΩ)
0.5
0
-50-250
255075100125150
TEMPERATURE (°C)
FIGURE 31. OFFSET VOLTAGE vs TEMPERATUREFIGURE 32. TRANSIMPEDANCE vs TEMPERATURE
5.1
5.05
5
4.95
4.9
4.85
OUTPUT VOLTAGE (±V)
4.8
4.75
-50-250
R
LOAD
VS=±6V
=100Ω
255075100125150
TEMPERATURE (°C)
16
15.5
15
14.5
14
13.5
13
SUPPLY CURRENT (mA)
12.5
12
-50-250
255075100125150
TEMPERATURE (°C)
FIGURE 33. OUTPUT VOLTAGE vs TEMPERATUREFIGURE 34. SUPPLY CURRENT vs TEMPERATURE
3
AV=5
=750Ω
R
F
=100Ω DIFF
R
L
2
1
PEAKING (dB)
0
-1
2.533.544.555.56
(±V)
V
S
FIGURE 35. DIFFERENTIAL PEAKING vs SUPPLY VOLTAGE
8
Typical Performance Curves (Continued)
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY (4-LAYER) TEST BOARD
3.5
EL8108
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1.4
3
2.5
2
1.5
1.136W
S
O
1
POWER DISSIPATION (W)
0.5
0
015050100
AMBIENT TEMPERATURE (°C)
8
1
1
0
°
C/
W
1252575 85
FIGURE 36. PACKAGE POWER DISSIP A TION vs AMBIENT
TEMPERATURE
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD - LPP EXPOSED
DIEPAD SOLDERED TO PCB PER JESD51-5
4.5
4
3.125W
3.5
3
2.5
2
1.5
1
POWER DISSIPATION (W)
0.5
0
0 255075100150
AMBIENT TEMPERATURE (°C)
QFN16
θJA=40°C/W
12585
FIGURE 38. PACKAGE POWER DISSIP A TION vs AMBIENT
TEMPERATURE
1.2
1
781mW
POWER DISSIPATION (W)
0.8
0.6
0.4
0.2
0
0
25507510015012585
S
O
8
θ
J
A
=
1
6
0
°
C
/
W
AMBIENT TEMPERATURE (°C)
FIGURE 37. PACKAGE POWER DISSIP A TION vs AMBIENT
TEMPERATURE
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1.2
1
833mW
0.8
0.6
0.4
POWER DISSIPATION (W)
0.2
0
0255075100 150
AMBIENT TEMPERATURE (°C)
QFN16
θJA=150°C/W
12585
FIGURE 39. PACKAGE POWER DISSIP A TION vs AMBIENT
TEMPERATURE
Applications Information
Product Description
The EL8108 is a dual current feedback operational amplifier
designed for video distribution solutions. It is a dual current
mode feedback amplifier with low distortion while drawing
moderately low supply current. It is built using Intersil’s
proprietary complimentary bipolar process and is offered in
industry standard pinouts. Due to the current feedback
architecture, the EL8108 closed-loop 3dB bandwidth is
dependent on the value of the feedback resistor. First the
desired bandwidth is selected by choosing the feedback
resistor, R
resistor, R
Performance Curves section show the effect of varying both
R
and RG. The 3dB bandwidth is somewhat dependent on
F
the power supply voltage.
, and then the gain is set by picking the gain
F
. The curves at the beginning of the Typical
G
9
Power Supply Bypassing and Printed Circuit
Board Layout
As with any high frequency device, good printed circuit
board layout is necessary for optimum performance. Ground
plane construction is highly recommended. Lead lengths
should be as short as possible, below ¼”. The power supply
pins must be well bypassed to reduce the risk of oscillation.
A 4.7µF tantalum capacitor in parallel with a 0.1µF ceramic
capacitor is adequate for each supply pin.
For good AC performance, parasitic capacitances should be
kept to a minimum, especially at the inverting input. This
implies keeping the ground plane away from this pin. Carbon
resistors are acceptable, while use of wire-wound resistors
should not be used because of their parasitic inductance.
Similarly, capacitors should be low inductance for best
performance.
EL8108
Capacitance at the Inverting Input
Due to the topology of the current feedback amplifier, stray
capacitance at the inverting input will affect the AC and
transient performance of the EL8108 when operating in the
non-inverting configuration.
In the inverting gain mode, added capacitance at the
inverting input has little effect since this point is at a virtual
ground and stray capacitance is therefore not “seen” by the
amplifier.
Feedback Resistor Values
The EL8108 has been designed and specified with
R
= 500Ω for AV = +2. This value of feedback resistor yields
F
extremely flat frequency response with little to no peaking
out to 200MHz. As is the case with all current feedback
amplifiers, wider bandwidth, at the expense of slight
peaking, can be obtained by reducing the value of the
feedback resistor. Inversely, larger values of feedback
resistor will cause rolloff to occur at a lower frequency. See
the curves in the Typical Performance Curves section which
show 3dB bandwidth and peaking vs. frequency for various
feedback resistors and various supply voltages.
Bandwidth vs Temperature
Whereas many amplifier's supply current and consequently
3dB bandwidth drop off at high temperature, the EL8108 was
designed to have little supply current variations with
temperature. An immediate benefit from this is that the 3dB
bandwidth does not drop off drastically with temperature.
Supply Voltage Range
The EL8108 has been designed to operate with supply
voltages from ±2.5V to ±6V. Optimum bandwidth, slew rate,
and video characteristics are obtained at higher supply
voltages. However, at ±2.5V supplies, the 3dB bandwidth at
A
= +5 is a respectable 200MHz.
V
Single Supply Operation
If a single supply is desired, values from +5V to +12V can be
used as long as the input common mode range is not
exceeded. When using a single supply, be sure to either 1)
DC bias the inputs at an appropriate common mode voltage
and AC couple the signal, or 2) ensure the driving signal is
within the common mode range of the EL8108.
Driving Cables and Capacitive Loads
The EL8108 was designed with driving multiple coaxial
cables in mind. With 450mA of output drive and low output
impedance, driving six, 75
cables to ±11V with one EL8108 is practical.
When used as a cable driver, double termination is always
recommended for reflection-free performance. For those
applications, the back termination series resistor will
decouple the EL8108 from the capacitive cable and allow
extensive capacitive drive.
Other applications may have high capacitive loads without
termination resistors. In these applications, an additional
small value (5Ω-50Ω) resistor in series with the output will
1. Plastic or metal protrusions of 0.006” maximum per side are not included.
2. Plastic interlead protrusions of 0.010” maximum per side are not included.
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.
4. Dimensioning and tolerancing per ASME Y14.5M-1994
SO16
SO16 (0.300”)
(SOL-16)
SO20
(SOL-20)
SO24
(SOL-24)
SO28
(SOL-28)TOLERANCENOTES
A
0.010
Rev. L 2/01
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implicat ion or oth erwise u nde r any p a tent or p at ent r ights of Intersil or its subsidiari es.
For information regarding Intersil Corporation and its products, see www.intersil.com
11
EL8108
QFN (Quad Flat No-Lead) Package Family
A
1
2
3
2X
0.075 C
L
(E2)
C
SEATING
PLANE
0.08 C
N LEADS
& EXPOSED PAD
A
C
N
(N-2)
(N-1)
PIN #1
I.D. MARK
TOP VIEW
0.10BAMC
b
N LEADS
(N/2)
(D2)
BOTTOM VIEW
e
SIDE VIEW
(c)
A1
DETAIL X
D
(N/2)
(N-2)
(N-1)
N
0.10
SEE DETAI L "X"
2
(L)
N LEADS
0.075
PIN #1 I.D.
1
2
3
NE
7
C
2X
B
E
C
3
5
MDP0046
QFN (QUAD FLAT NO-LEAD) PACKAGE FAMILY
(COMPLIANT TO JEDEC MO-220)