intersil EL8108 DATA SHEET

®
Data Sheet June 14, 2007
Video Distribution Amplifier
The EL8108 is a dual current feedback operational amplifier designed for
video distribution solutions. This device features a high drive capability of 450mA while consuming only 5mA of supply current per amplifier and operating from a single 5V to 12V supply.
The EL8108 is available in the industry standard 8 Ld SOIC as well as the thermally-enhanced 16 Ld QFN package. Both are specified for operation over the full -40°C to +85°C temperature range. The EL8108 has control pins C0 and C1 for controlling the bias and enable/disable of the outputs.
The EL8108 is ideal for driving multiple video loads while maintaining linearity.
Ordering Information
PART
PART NUMBER
MARKING PACKAGE
EL8108IS 8108IS 8 Ld SOIC - MDP0027 EL8108IS-T7 8108IS 8 Ld SOIC 7” MDP0027 EL8108IS-T13 8108IS 8 Ld SOIC 13” MDP0027 EL8108ISZ
8108ISZ 8 Ld SOIC - MDP0027
(Note) EL8108ISZ-T7
8108ISZ 8 Ld SOIC 7” MDP0027
(Note) EL8108ISZ-T13
8108ISZ 8 Ld SOIC 13” MDP0027
(Note) EL8108IL 8108IL 16 Ld 4x4 QFN - MDP0046 EL8108IL-T7 8108IL 16 Ld 4x4 QFN 7” MDP0046 EL8108IL-T13 8108IL 16 Ld 4x4 QFN 13” MDP0046
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
TABLE 1.
150Ω 150Ω DIFF GAIN DIFF PHASE
1 0 0.03 0.01 1 1 0.03 0.01 2 1 0.05 0.02 2 2 0.06 0.03 3 2 0.08 0.03 3 3 0.11 0.03 2 0 0.04 0.01 3 0 0.05 0.02 4 0 0.07 0.02 5 0 0.08 0.03 6 0 0.10 0.03
TAPE &
REEL
PKG.
DWG. #
FN7417.1
Features
• Drives up to 450mA from a +12V supply
•20V
differential output drive into 100Ω
P-P
• -85dBc typical driver output distortion at full output at 150kHz
• -70dBc typical driver output distortion at 3.75MHz
• Low quiescent current of 5mA per amplifier
• 300MHz bandwidth
• Pb-free plus anneal available (RoHS compliant)
Applications
• Video distribution amplifiers
Pinouts
EL8108
(8 LD SOIC)
TOP VIEW
1
2
-
+
3
INA+
GND INB+
4
EL8108
(16 LD QFN)
TOP VIEW
OUTA
NC
16
15
1
NC
AMP A AMP B
2
INA-
INA+
GND
-
+
3
4
5 NC
POWER
CONTROL
LOGIC
6 NC
8
VSOUTA
7
OUTBINA-
INB-
6
-
+
5
VS+
OUTB
14
13
12
NC
INB-
11
-
+
INB+
10
C1
9
7
8 C0
VS-
1
Copyright © Intersil Americas Inc. 2004. All Rights Reserved. Elantec is a registered trademark of Elantec Semiconductor, Inc.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
All other trademarks mentioned are the property of their respective owners.
EL8108
Absolute Maximum Ratings (T
V
+ Voltage to Ground . . . . . . . . . . . . . . . . . . . . . . -0.3V to +13.2V
S
V
+ Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to VS+
IN
Current into any Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mA
Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mA
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = T
Electrical Specifications V
= +25°C)
A
Ambient Operating Temperature Range . . . . . . . . . .-40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . . . . . .-60°C to +150°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . .+150°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
A
= 12V, RF = 750Ω, RL = 100Ω connected to mid supply, T
S
= +25°C, unless otherwise specified.
A
PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT
AC PERFORMANCE
BW -3dB Bandwidth R
= 500Ω, AV = +2 200 MHz
F
RF = 500Ω, AV = +4 150 MHz
HD Total Harmonic Distortion, Differential f = 200kHz, V
f = 4MHz, V f = 8MHz, VO = 2V f = 16MHz, V
SR Slew Rate, Single-ended V
from -3V to +3V 600 800 1100 V/µs
OUT
O
O
= 2V
O
= 16V
= 2V
, RL = 50Ω -72 -83 dBc
P-P
, RL = 100Ω -70 dBc
P-P
, RL = 100Ω -60 dBc
P-P
, RL = 100Ω -50 dBc
P-P
DC PERFORMANCE
V ΔV R
OS
OS
OL
Offset Voltage -25 +25 mV VOS Mismatch -3 +3 mV Transimpedance V
from -4.5V to +4.5V 0.7 1.4 2.5 MΩ
OUT
INPUT CHARACTERISTICS
I
+ Non-Inverting Input Bias Current -5 5 µA
B
I
- Inverting Input Bias Current -20 5 +20 µA
B
ΔIB-I e
N
i
N
- Mismatch -18 0 +18 µA
B
Input Noise Voltage 6nV
Hz
-Input Noise Current 13 pA/√Hz
OUTPUT CHARACTERISTICS
V
I
OUT
OUT
Loaded Output Swing (single ended) VS = ±6V, RL = 100Ω to GND ±4.8 ±5 V
V
= ±6V, RL = 25Ω to GND ±4.7 V
S
Output Current RL = 0Ω 450 mA
SUPPLY
V
S
(EL8108IS only) Supply Current, Maximum Setting All outputs at mid supply 11 14.3 18 mA
I
S
Supply Voltage Single supply 4.5 13 V
SUPPLY (EL8108IL ONLY)
I
+ (full power) Positive Supply Current per Amplifier All outputs at 0V, C0 = C1 = 0V 11 14.3 18 mA
S
+ (medium power) Positive Supply Current per Amplifier All outputs at 0V, C0 = 5V, C1 = 0V 7 8.9 11 mA
I
S
I
+ (low power) Positive Supply Current per Amplifier All outputs at 0V, C0 = 0V, C1 = 5V 3.7 4.5 5.5 mA
S
I
+ (power down) Positive Supply Current per Amplifier All outputs at 0V, C0 = C1 = 5V 0.1 0.5 mA
S
I
I
INH
INL
, C0 or C
, C0 or C
1
1
C0, C1 Input Current, High C0, C1 = 5V 90 125 160 µA
C0, C1 Input Current, Low C0, C1 = 0V -5 +5 µA
2
Typical Performance Curves
22
VS = ±6V, AV = 5
20
= 100Ω DIFF
R
L
18 16 14 12 10
GAIN (dB)
8 6 4 2
100K
1M
FREQUENCY (Hz)
RF = 500Ω
RF = 750Ω
RF = 1kΩ
10M 100M
FIGURE 1. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS R
(FULL POWER MODE)
F
RF = 243Ω
500M
EL8108
22
VS = ±6V, AV = 5
20
= 100Ω DIFF
R
L
18 16 14 12 10
GAIN (dB)
8 6 4 2
100K
1M
RF = 500Ω
RF = 750Ω
RF = 1kΩ
10M 100M
FREQUENCY (Hz)
RF = 243Ω
500M
FIGURE 2. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS RF (3/4 POWER MODE)
22
VS = ±6V, AV = 5
20 18 16 14 12 10
GAIN (dB)
8 6 4 2
100K
RL = 100Ω DIFF
RF = 500Ω
RF = 750Ω
1M
FREQUENCY (Hz)
RF = 243Ω
RF = 1kΩ
10M 100M
500M
FIGURE 3. DIFFERENTIAL FREQUENCY RESPONSE WITH
28 26 24 22 20 18 16
GAIN (dB)
14 12 10
8
100K
VARIOUS R
VS = ±6V, AV = 10 R
= 100Ω DIFF
L
(1/2 POWER MODE)
F
RF = 750Ω
1M
10M 100M
FREQUENCY (Hz)
RF = 243Ω
RF = 500Ω
RF = 1kΩ
500M
FIGURE 5. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS R
(3/4 POWER MODE)
F
28
VS = ±6V, AV = 10
26
R
= 100Ω DIFF
L
24 22 20 18 16
GAIN (dB)
14 12 10
8
100K
1M
FREQUENCY (Hz)
RF = 243Ω
RF = 750Ω
RF = 1kΩ
10M 100M
RF = 500Ω
500M
FIGURE 4. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS RF (FULL POWER MODE)
28
VS = ±6V, AV = 10
26
R
= 100Ω DIFF
L
24 22 20 18 16
GAIN (dB)
14 12 10
8
100K
RF = 243Ω
1M
FREQUENCY (Hz)
RF = 1kΩ
10M 100M
RF = 500Ω
RF = 750Ω
500M
FIGURE 6. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS RF (1/2 POWER MODE)
3
Typical Performance Curves (Continued)
EL8108
VS=±6V
14
A
=2
V
R
=100Ω DIFF
L
12 10
8 6 4
GAIN (dB)
2 0
-2
100K 1M 10M 100M 500M
FREQUENCY (Hz)
RF=248Ω
RF=500Ω
RF=1kΩ
RF=750Ω
FIGURE 7. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS R
-50 VS=±6V
A
=5
V
-55 R
=50Ω DIFF
L
R
=750
F
-60
-65
-70
HD (dB)
-75
-80
-85
123456789
F
EL8108IL EL8108IS
3rd HD
2nd HD
V
(V)
OP-P
FIGURE 9. DISTORTION BETWEEN EL8108IL vs EL8108IS
AT 2MHz
VS=±6V
8
A
=2
V
R
=500Ω
F
6 4 2 0
-2
-4
NORMALIZED GAIN (dB)
-6
-8
100K 1M 10M 100M 500M
FREQUENCY (Hz)
RL=25Ω
RL=50Ω
FIGURE 8. FREQUENCY RESPONSE FOR VARIOUS R
-50 VS=±6V
A
=5
V
-55
R
=50Ω DIFF
L
R
=750
F
-60
-65
HD (dB)
-70
-75
-80
123456789
3rd HD
V
OP-P
2nd HD
(V)
RL=150Ω
EL8108IL EL8108IS
LOAD
FIGURE 10. DISTORTION BETWEEN EL8108IL vs EL8108IS
AT 3MHz
-40 VS=±6V
=5
A
V
-45 R
=50Ω DIFF
L
=750
R
F
-50
-55
-60
HD (dB)
-65
-70
-75
123456789
3rd HD
V
OP-P
(V)
2nd HD
EL8108IL EL8108IS
FIGURE 11. DISTORTION BETWEEN EL8108IL vs EL8108IS
AT 5MHz
4
-40 VS=±6V
=5
A
V
R
=50Ω DIFF
L
-45
=750
R
F
-50
HD (dB)
-55
-60
-65
123456789
V
3rd HD
OP-P
(V)
2nd HD
EL8108IL EL8108IS
FIGURE 12. DISTORTION BETWEEN EL8108IL vs EL8108IS
AT 10MHz
Typical Performance Curves (Continued)
-70 VS=±6V
=5
A
V
-75
=750
R
F
=4V
V
OPP
-80
-85
HD (dB)
-90
-95
3rd HD
2nd HD
EL8108
HD (dB)
-60
-65
-70
-75
-80
-85
VS=±6V
=5
A
V
=750
R
F
V
OPP
=4V
3rd HD
2nd HD
-100 50 60 70 80 90 100 110 120 150
R
LOAD
(Ω)
130 140
FIGURE 13. 2nd AND 3rd HARMONIC DISTORTION vs R
@ 2MHz (EL8108IL)
-50 VS=±6V
=5
A
V
-55
=750
R
F
=4V
V
-60
OPP
-65
-70
HD (dB)
-75
-80
-85
-90
50 60 70 80 90 100 110 120 150
2nd HD
R
LOAD
3rd HD
130 140
(Ω)
FIGURE 15. 2nd AND 3rd HARMONIC DISTORTION vs R
@ 5MHz (EL8108IL)
LOAD
LOAD
-90 50 60 70 80 90 100 110 120 150
FIGURE 14. 2nd AND 3rd HARMONIC DISTORTION vs R
R
LOAD
(Ω)
@ 3MHz (EL8108IL)
-40
-45
-50
-55
-60
HD (dB)
-65
-70
-75
-80 50 60 70 80 90 100 110 120 150
FIGURE 16. 2nd AND 3rd HARMONIC DISTORTION vs R
2nd HD
R
LOAD
3rd HD
(Ω)
@ 10MHz (EL8108IL)
130 140
VS=±6V
=5
A
V
=750
R
F
V
OPP
130 140
=4V
LOAD
LOAD
VS = ±6V, AV = 5
22
= 50Ω
R
L
R
= 750Ω
20
F
18 16 14 12
GAIN (dB)
10
8 6 0
100K
1M
FREQUENCY (Hz)
CL = 47pF
CL = 33pF
CL = 0pF
CL = 22pF
10M 100M
500M
FIGURE 17. FREQUENCY RESPONSE WITH VARIOUS C
5
24
VS = ±6V, AV = 5
22
= 50Ω
R
L
= 750Ω
R
20
F
18 16 14 12
GAIN (dB)
10
8 6 4
100K
L
FIGURE 18. FREQUENCY RESPONSE vs VARIOUS CL
1M
FREQUENCY (Hz)
(3/4 POWER MODE)
CL = 47pF
CL = 39pF
CL = 12pF
CL = 0pF
10M 100M
500M
Typical Performance Curves (Continued)
24
VS = ±6V, AV = 5
22
R
= 50Ω
L
= 750Ω
R
20
F
18 16 14 12
GAIN (dB)
10
8 6 4
100K
1M
FREQUENCY (Hz)
CL = 12pF
CL = 0pF
10M 100M
FIGURE 19. FREQUENCY RESPONSE WITH VARIOUS CL
(1/2 POWER MODE)
CL = 47pF
CL = 37pF
500M
EL8108
-10
-30
-50
A B
B A
1M 10M
FREQUENCY (Hz)
CHANNEL SEPARATION (dB)
-70
-90
-110 10K
100K
FIGURE 20. CHANNEL SEPARATION vs FREQUENCY
100M
-10
-30
-50
-70
PSRR (dB)
-90
-110 100K 1M 10M 10M 100M
FREQUENCY (Hz)
PSRR+
FIGURE 21. PSRR vs FREQUENCY FIGURE 22. TRANSIMPEDANCE (R
1000
100
EN
IN-
IN+
FREQUENCY (Hz)
0.01
0.001
0.0001
VOLTAGE/CURRENT NOISE (nV/√Hz)(nA/√Hz)
0.1
10
1
10010
1K 10K 100K 1M 10M
PSRR-
200M
10M
3M 300K 100K
30K 10K
MAGNITUDE (Ω)
3K 1K
-110 1K 10K 100K 1M 10M
VS = ±6V, AV = 1 R
= 750Ω
F
10
1
OUTPUT IMPEDANCE (Ω)
0.1
10K
FREQUENCY (Hz)
100K
FREQUENCY (Hz)
GAIN
1M 10M
PHASE
) vs FREQUENCY
OL
100M
100M
FIGURE 23. VOLTAGE AND CURRENT NOISE vs FREQUENCY FIGURE 24. OUTPUT IMPEDANCE vs FREQUENCY
200 150 100 50 0
-50
-100
-150
-200
PHASE (°)
6
Typical Performance Curves (Continued)
EL8108
150 130 120 110 100
90
BW (MHz)
80 70 60 50
3
AV = 5, RF = 750Ω,
= 100Ω DIFF
R
LOAD
FULL POWER MODE
3/4 POWER MODE
3.5
4
1/2 POWER MODE
4.5
±VS (V)
5
5.5
6
0.4 VS=±6V
0.35
0.3
0.25
0.2
0.15
0.1
DIFFERENTIAL GAIN (%)
0.05
FULL POWER MODE
0
1234
1/2 POWER MODE
3/4 POWER MODE
# OF 150Ω LOADS
FIGURE 25. DIFFERENTIAL BANDWIDTH vs SUPPLY VOL TAGE FIGURE 26. DIFFERENTIAL GAIN
0.09 VS=±6V
0.08
0.07
0.06
0.05
0.04
0.03
DIFFERENTIAL PHASE (%)
1/2 POWER MODE
0.02
0.01
1234
FULL POWER MODE
3/4 POWER MODE
# OF 150Ω LOADS
16
14
12
10
8
(mA)
S
I
6
4
2
0
1246
FULL POWER MODE
3/4 POWER MODE
35
(V)
±V
S
1/2 POWER MODE
FIGURE 27. DIFFERENTIAL PHASE FIGURE 28. SUPPLY CURRENT vs SUPPLY VOLTAGE
+IS
-IS
1
0
IB+
-1
-2
-3
INPUT BIAS CURRENT (µA)
-4
-5
0 25 50 75 100 125 150
TEMPERATURE (°C)
IB-
1.8K
1.7K
1.6K
1.5K
1.4K
SLEW RATE (V/µs)
1.3K
1.2K
-50 -25 0
25 50 75 100 125 150
TEMPERATURE (°C)
FIGURE 29. INPUT BIAS CURRENT vs TEMPERATURE FIGURE 30. SLEW RATE vs TEMPERATURE
7
Typical Performance Curves (Continued)
EL8108
5
4
3
2
1
OFFSET VOLTAGE (mV)
0
-1
-50 -25 0
25 50 75 100 125 150
TEMPERATURE (°C)
3
2.5
2
1.5
1
TRANSIMPEDANCE (MΩ)
0.5
0
-50 -25 0
25 50 75 100 125 150
TEMPERATURE (°C)
FIGURE 31. OFFSET VOLTAGE vs TEMPERATURE FIGURE 32. TRANSIMPEDANCE vs TEMPERATURE
5.1
5.05
5
4.95
4.9
4.85
OUTPUT VOLTAGE (±V)
4.8
4.75
-50 -25 0
R
LOAD
VS=±6V
=100Ω
25 50 75 100 125 150
TEMPERATURE (°C)
16
15.5
15
14.5
14
13.5
13
SUPPLY CURRENT (mA)
12.5 12
-50 -25 0
25 50 75 100 125 150
TEMPERATURE (°C)
FIGURE 33. OUTPUT VOLTAGE vs TEMPERATURE FIGURE 34. SUPPLY CURRENT vs TEMPERATURE
3
AV=5
=750Ω
R
F
=100Ω DIFF
R
L
2
1
PEAKING (dB)
0
-1
2.5 3 3.5 4 4.5 5 5.5 6 (±V)
V
S
FIGURE 35. DIFFERENTIAL PEAKING vs SUPPLY VOLTAGE
8
Typical Performance Curves (Continued)
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL CONDUCTIVITY (4-LAYER) TEST BOARD
3.5
EL8108
JEDEC JESD51-3 LOW EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD
1.4
3
2.5
2
1.5
1.136W
S
O
1
POWER DISSIPATION (W)
0.5
0
0 15050 100
AMBIENT TEMPERATURE (°C)
8
1
1
0
°
C/
W
12525 75 85
FIGURE 36. PACKAGE POWER DISSIP A TION vs AMBIENT
TEMPERATURE
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD - LPP EXPOSED DIEPAD SOLDERED TO PCB PER JESD51-5
4.5 4
3.125W
3.5 3
2.5 2
1.5 1
POWER DISSIPATION (W)
0.5 0
0 255075100 150
AMBIENT TEMPERATURE (°C)
QFN16
θJA=40°C/W
12585
FIGURE 38. PACKAGE POWER DISSIP A TION vs AMBIENT
TEMPERATURE
1.2
1
781mW
POWER DISSIPATION (W)
0.8
0.6
0.4
0.2
0
0
25 50 75 100 15012585
S
O
8
θ
J
A
=
1
6
0
°
C
/
W
AMBIENT TEMPERATURE (°C)
FIGURE 37. PACKAGE POWER DISSIP A TION vs AMBIENT
TEMPERATURE
JEDEC JESD51-3 LOW EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD
1.2
1
833mW
0.8
0.6
0.4
POWER DISSIPATION (W)
0.2
0
0255075100 150
AMBIENT TEMPERATURE (°C)
QFN16
θJA=150°C/W
12585
FIGURE 39. PACKAGE POWER DISSIP A TION vs AMBIENT
TEMPERATURE
Applications Information
Product Description
The EL8108 is a dual current feedback operational amplifier designed for video distribution solutions. It is a dual current mode feedback amplifier with low distortion while drawing moderately low supply current. It is built using Intersil’s proprietary complimentary bipolar process and is offered in industry standard pinouts. Due to the current feedback architecture, the EL8108 closed-loop 3dB bandwidth is dependent on the value of the feedback resistor. First the desired bandwidth is selected by choosing the feedback resistor, R resistor, R Performance Curves section show the effect of varying both R
and RG. The 3dB bandwidth is somewhat dependent on
F
the power supply voltage.
, and then the gain is set by picking the gain
F
. The curves at the beginning of the Typical
G
9
Power Supply Bypassing and Printed Circuit Board Layout
As with any high frequency device, good printed circuit board layout is necessary for optimum performance. Ground plane construction is highly recommended. Lead lengths should be as short as possible, below ¼”. The power supply pins must be well bypassed to reduce the risk of oscillation. A 4.7µF tantalum capacitor in parallel with a 0.1µF ceramic capacitor is adequate for each supply pin.
For good AC performance, parasitic capacitances should be kept to a minimum, especially at the inverting input. This implies keeping the ground plane away from this pin. Carbon resistors are acceptable, while use of wire-wound resistors should not be used because of their parasitic inductance. Similarly, capacitors should be low inductance for best performance.
EL8108
Capacitance at the Inverting Input
Due to the topology of the current feedback amplifier, stray capacitance at the inverting input will affect the AC and transient performance of the EL8108 when operating in the non-inverting configuration.
In the inverting gain mode, added capacitance at the inverting input has little effect since this point is at a virtual ground and stray capacitance is therefore not “seen” by the amplifier.
Feedback Resistor Values
The EL8108 has been designed and specified with R
= 500Ω for AV = +2. This value of feedback resistor yields
F
extremely flat frequency response with little to no peaking out to 200MHz. As is the case with all current feedback amplifiers, wider bandwidth, at the expense of slight peaking, can be obtained by reducing the value of the feedback resistor. Inversely, larger values of feedback resistor will cause rolloff to occur at a lower frequency. See the curves in the Typical Performance Curves section which show 3dB bandwidth and peaking vs. frequency for various feedback resistors and various supply voltages.
Bandwidth vs Temperature
Whereas many amplifier's supply current and consequently 3dB bandwidth drop off at high temperature, the EL8108 was designed to have little supply current variations with temperature. An immediate benefit from this is that the 3dB bandwidth does not drop off drastically with temperature.
Supply Voltage Range
The EL8108 has been designed to operate with supply voltages from ±2.5V to ±6V. Optimum bandwidth, slew rate, and video characteristics are obtained at higher supply voltages. However, at ±2.5V supplies, the 3dB bandwidth at A
= +5 is a respectable 200MHz.
V
Single Supply Operation
If a single supply is desired, values from +5V to +12V can be used as long as the input common mode range is not exceeded. When using a single supply, be sure to either 1) DC bias the inputs at an appropriate common mode voltage and AC couple the signal, or 2) ensure the driving signal is within the common mode range of the EL8108.
Driving Cables and Capacitive Loads
The EL8108 was designed with driving multiple coaxial cables in mind. With 450mA of output drive and low output impedance, driving six, 75 cables to ±11V with one EL8108 is practical.
When used as a cable driver, double termination is always recommended for reflection-free performance. For those applications, the back termination series resistor will decouple the EL8108 from the capacitive cable and allow extensive capacitive drive.
Other applications may have high capacitive loads without termination resistors. In these applications, an additional small value (5Ω-50Ω) resistor in series with the output will
Ω double terminated coaxial
+5V
EL8108
-5V
750
750
10
Small Outline Package Family (SO)
A
D
NN
(N/2)+1
EL8108
h X 45°
PIN #1
E
C
SEATING PLANE
0.004 C
E1
B
0.010 BM CA
I.D. MARK
1
e
0.010 BM CA
(N/2)
c
SEE DETAIL “X”
L1
H
A2
GAUGE PLANE
A1
b
DETAIL X
L
4° ±4°
MDP0027
SMALL OUTLINE PACKAGE FAMILY (SO)
SYMBOL SO-8 SO-14
(0.150”)
A 0.068 0.068 0.068 0.104 0.104 0.104 0.104 MAX -
A1 0.006 0.006 0.006 0.007 0.007 0.007 0.007 ±0.003 ­A2 0.057 0.057 0.057 0.092 0.092 0.092 0.092 ±0.002 -
b 0.017 0.017 0.017 0.017 0.017 0.017 0.017 ±0.003 -
c 0.009 0.009 0.009 0.011 0.011 0.011 0.011 ±0.001 ­D 0.193 0.341 0.390 0.406 0.504 0.606 0.704 ±0.004 1, 3 E 0.236 0.236 0.236 0.406 0.406 0.406 0.406 ±0.008 -
E1 0.154 0.154 0.154 0.295 0.295 0.295 0.295 ±0.004 2, 3
e 0.050 0.050 0.050 0.050 0.050 0.050 0.050 Basic -
L 0.025 0.025 0.025 0.030 0.030 0.030 0.030 ±0.009 -
L1 0.041 0.041 0.041 0.056 0.056 0.056 0.056 Basic -
h 0.013 0.013 0.013 0.020 0.020 0.020 0.020 Reference -
N 8 14 16 16 20 24 28 Reference -
NOTES:
1. Plastic or metal protrusions of 0.006” maximum per side are not included.
2. Plastic interlead protrusions of 0.010” maximum per side are not included.
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.
4. Dimensioning and tolerancing per ASME Y14.5M-1994
SO16
SO16 (0.300”)
(SOL-16)
SO20
(SOL-20)
SO24
(SOL-24)
SO28
(SOL-28) TOLERANCE NOTES
A
0.010
Rev. L 2/01
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implicat ion or oth erwise u nde r any p a tent or p at ent r ights of Intersil or its subsidiari es.
For information regarding Intersil Corporation and its products, see www.intersil.com
11
EL8108
QFN (Quad Flat No-Lead) Package Family
A
1 2 3
2X
0.075 C
L
(E2)
C
SEATING PLANE
0.08 C
N LEADS & EXPOSED PAD
A
C
N
(N-2)
(N-1)
PIN #1 I.D. MARK
TOP VIEW
0.10 BAMC
b
N LEADS
(N/2)
(D2)
BOTTOM VIEW
e
SIDE VIEW
(c)
A1
DETAIL X
D
(N/2)
(N-2)
(N-1)
N
0.10
SEE DETAI L "X"
2
(L)
N LEADS
0.075
PIN #1 I.D.
1 2 3
NE
7
C
2X
B
E
C
3
5
MDP0046
QFN (QUAD FLAT NO-LEAD) PACKAGE FAMILY (COMPLIANT TO JEDEC MO-220)
MILLIMETERS
SYMBOL
A 0.90 0.90 0.90 0.90 ±0.10 -
A1 0.02 0.02 0.02 0.02 +0.03/-0.02 -
b 0.25 0.25 0.23 0.22 ±0.02 ­c 0.20 0.20 0.20 0.20 Reference ­D 7.00 5.00 8.00 5.00 Basic -
D2 5.10 3.80 5.80 3.60/2.48 Reference 8
E 7.00 7.00 8.00 6.00 Basic -
E2 5.10 5.80 5.80 4.60/3.40 Reference 8
e 0.50 0.50 0.80 0.50 Basic ­L 0.55 0.40 0.53 0.50 ±0.05 -
N 44 38 32 32 Reference 4 ND 11 7 8 7 Reference 6 NE 11 12 8 9 Reference 5
MILLIMETERS
SYMBOL
A 0.90 0.90 0.90 0.90 0.90 ±0.10 ­A1 0.02 0.02 0.02 0.02 0.02 +0.03/
b 0.25 0.25 0.30 0.25 0.33 ±0.02 -
c 0.20 0.20 0.20 0.20 0.20 Reference -
D 4.00 4.00 5.00 4.00 4.00 Basic ­D2 2.65 2.80 3.70 2.70 2.40 Reference -
E 5.00 5.00 5.00 4.00 4.00 Basic ­E2 3.65 3.80 3.70 2.70 2.40 Reference -
e 0.50 0.50 0.65 0.50 0.65 Basic -
L 0.40 0.40 0.40 0.40 0.60 ±0.05 -
N 28 24 20 20 16 Reference 4 ND 6 5 5 5 4 Reference 6 NE 8 7 5 5 4 Reference 5
NOTES:
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Tiebar view shown is a non-functional feature.
3. Bottom-side pin #1 I.D. is a diepad chamfer as shown.
4. N is the total number of terminals on the device.
5. NE is the number of terminals on the “E” side of the package (or Y-direction).
6. ND is the number of terminals on the “D” side of the package (or X-direction). ND = (N/2)-NE.
7. Inward end of terminal may be square or circular in shape with radius (b/2) as shown.
8. If two values are listed, multiple exposed pad options are available. Refer to device-specific datasheet.
TOLERANCE NOTESQFN44 QFN38 QFN32
TOLER-
ANCE NOTESQFN28 QFN24 QFN20 QFN16
-0.02
Rev 11 2/07
-
12
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