The DG411 series monolithic CMOS analog switches are
drop-in replacements for the popular DG211 and DG212
series devices. They include four independent single pole
throw (SPST) analog switches, and TTL and CMOS
compatible digital inputs.
These switches feature lower analog ON resistance (<35Ω)
and faster switch time (t
DG211 or DG212. Charge injection has been reduced,
simplifying sample and hold applications.
The improvements in the DG411 series are made possible
by using a high voltage silicon-gate process. An epitaxial
layer prevents the latch-up associated with older CMOS
technologies. The 44V maximum voltage range permits
controlling 40V
signals. Power supplies may be
P-P
single-ended from +5V to +34V, or split from ±5V to ±20V.
The four switches are bilateral, equally matched for AC or
bidirectional signals. The ON resistance variation with
analog signals is quite low over a ±15V analog input range.
The switches in the DG411 and DG412 are identical,
differing only in the polarity of the selection logic. Two of the
switches in the DG413 (#1 and #4) use the logic of the
DG211 and DG411(i.e., a logic “0” turns the switch ON) and
the other two switches use DG212 and DG412 positive logic.
This permits independent control of turn-on and turn-off
times for SPDT configurations, permitting “break-beforemake” or “make-before-break” operation with a minimum of
external logic.
DG411DJ-40 to 8516 Ld PDIPE16.3
DG411DY-40 to 8516 Ld SOICM16.15
DG412DJ-40 to 8516 Ld PDIPE16.3
DG412DY-40 to 8516 Ld SOICM16.15
DG413DJ-40 to 8516 Ld PDIPE16.3
DG413DY-40 to 8516 Ld SOICM16.15
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
2. θJA is measured with the component mounted on an evaluation PC board in free air.