The CDP1824 and CDP1824C are 32-word x 8-bit fully static
CMOS random-access memories for use in CDP-1800
series microprocessor systems. These parts are compatible
with the CDP1802 microprocessor and will interface directly
without additional components.
32-Word x 8-Bit Static RAM
The CDP1824 is fully decoded and does not require a precharge or clocking signal for proper operation. It has
common input and output and is operated from a single
voltage supply. The
MRD signal (output disable control)
enables the three-state output drivers, and overrides the
MWR signal. A CS input is provided for memory expansion.
The CDP1824C is functionally identical to the CDP1824.
The CDP1824 has an operating range of 4V to 10.5V, and
the CDP1824C has an operating voltage range of 4V to
6.5V. The CDP1824 and CDP1824C are supplied in 18 lead
hermetic dual-in-line ceramic packages (D suffix), and in 18
lead dual-in-line plastic packages (E suffix).
Ordering Information
5V10VPACKAGETEMPERATURE RANGEPKG. NO.
CDP1824CECDP1824EPDIP-40oC to +85oCE18.3
CDP1824CEXCDP1824EXBurn-InE18.3
CDP1824CDCDP1824DSBDIP-40oC to +85oCD18.3
Pinout
CDP1824, CDP1824C (PDIP, SBDIP)
TOP VIEW
1
MA4
MA3
2
MA2
3
MA1
4
MA0
5
BUS 7
6
BUS 6
7
BUS 5
8
V
9
SS
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
= Full Package Temperature Range.F or maxim um reliability, operating conditions
A
should be selected so that operation is always within the following ranges:
CONDITIONLIMITS
CDP1824DCDP1824CD
PARAMETER
MINMAXMINMAX
UNITSVDD (V)
Supply Voltage Range-410.546.5V
Recommended Input Voltage Range-V
SS
V
DD
V
SS
V
DD
Input Signal Rise or Fall Time (Note 1)5-5-5µs
tR, t
F
10-2--µs
NOTE:
1. Input signal rise or fall times longer than these maxima can cause loss of stored data in either the selected or deselected mode.
Static Electrical Specifications At T
= -40oC to +85oC, Except as Noted:
A
CONDITIONSLIMITS
CDP1824CDP1824C
PARAMETERSYMBOL
Quiescent Device
Current
Output Low (Sink)
Current
Output High (Source)
Current
Output Voltage
Low-Level
Output Voltage
High-Level
Input Low VoltageV
V
O
(V)
I
DD
--5-2550-100200µA
--10-250500---µA
I
OL
0.40, 551.82.2-1.82.2-mA
0.50, 10103.64.5----mA
I
OH
4.60, 55-0.9-1.1--0.9-1.1-mA
9.50, 1010-1.8-2.2----mA
V
OL
-0, 55-00.1-00.1V
-0, 1010-00.1---V
V
OH
-0, 554.95-4.95-V
-0, 10109.910----V
0.5, 4.5-5--1.5--1.5V
IL
V
(V)
V
IN
DD
(V)
MIN
(NOTE 1)
TYPMAXMIN
(NOTE 1)
TYPMAX
1.9-10--3---V
Input High VoltageV
0.5, 9.5-53.5--3.5--V
IH
1.9-107-----V
Input Leakage CurrentI
Operating Current
(Note 2)
I
DD1
IN
Any
Input
0, 55-± 0.1±1-± 0.1± 1µA
0, 1010-± 0.1± 1- - -µA
-0, 55-48-48mA
-0, 1010-816---mA
V
UNITS
6-38
CDP1824, CDP1824C
Static Electrical Specifications At T
= -40oC to +85oC, Except as Noted: (Continued)
A
CONDITIONSLIMITS
CDP1824CDP1824C
PARAMETERSYMBOL
Three-State Output
Leakage Current
Input CapacitanceC
Output CapacitanceC
I
OUT
OUT
V
O
(V)
0, 50, 55-± 0.2±2.0-± 0.2± 2µA
0, 100, 1010-± 0.2±2.0---µA
IN
----57.5-57.5pF
----1015-1015pF
V
(V)
V
IN
DD
(V)
MIN
(NOTE 1)
TYPMAXMIN
(NOTE 1)
TYPMAX
NOTES:
1. Typical values are for TA = +25oC and nominal VDD.
2. Outputs open circuited; Cycle time = 1µs.
Dynamic Electrical Specifications at T
PARAMETERSYMBOL
= -40oC to +85oC, VDD±5%, Input tR, tF = 10ns, CL = 50pF, RL = 200kΩ; See Figure 1
A
TEST
CONDITIONS
VDD (V)
CDP1824D, CDP1824ECDP1824CD, CDP1824CE
(NOTE 1)
MIN
(NOTE 2)
TYPMAX
LIMITS
(NOTE 1)
MIN
(NOTE 2)
TYPMAX
READ OPERATION
Access Time From
Address Change
Access Time From
Chip Select
Output Active From MRDt
t
t
DOA
AA
AM
5-400710-400710ns
10-200320---ns
5-300710-300710ns
10-150320---ns
5-300710-300710ns
10-150320---ns
NOTES:
1. Time required by a limit device to allow for the indicated function.
2. Time required by a typical device to allow for the indicated function. Typical values are for TA = +25oC and nominal VDD.
UNITS
UNITS
t
AM
MRD
MA
CS
DATA OUT
(NOTE 1)
t
AA
(NOTE 1)
t
DOA
HIGH IMPEDANCE
NOTES:
1. Minimum timing for valid data output longer times will initiate an earlier, but invalid output.
FIGURE 1. READ CYCLE TIMING DIAGRAMS
6-39
CDP1824, CDP1824C
Dynamic Electrical Specifications at T
PARAMETERSYMBOL
= -40oC to +85oC, VDD±5%, Input tR, tF = 10ns, CL = 50pF, RL = 200kΩ; See Figure 2
A
TEST
CONDITIONS
VDD (V)
CDP1824D, CDP1824ECDP1824CD, CDP1824CE
(NOTE 1)
MIN
(NOTE 2)
TYPMAX
LIMITS
(NOTE 1)
MIN
(NOTE 2)
TYPMAX
WRITE OPERATION
Write Pulse Widtht
WRW
5390200-390200-ns
10180150----ns
Data Setup Timet
DS
5390100-390100-ns
1018050----ns
Data Hold Timet
DH
57040-7040-ns
103520----ns
Chip Select Setup Timet
CS
5425210-425210-ns
10215110----ns
Address Setup Timet
AS
5640500-640500-ns
10390300----ns
NOTES:
1. Time required by a limit device to allow for the indicated function.
2. Time required by a typical device to allow for the indicated function. Typical values are for TA = +25oC and nominal VDD.
UNITS
NOTE: tR, tF > 1µs.
MA
CS
MWR
BUS
t
AS
t
CS
t
WRW
t
DS
t
DH
FIGURE 2. WRITE CYCLE TIMING DIAGRAM
DATA RETENTION
MODE
V
CS
DD
0.95 V
DD
t
CDR
V
IH
V
IL
t
F
(NOTE 1)
V
DR
0.95 V
t
R
(NOTE 1)
DD
t
RC
V
IH
V
IL
FIGURE 3. LOW VDD DATA RETENTION WAVEFORMS AND TIMING DIAGRAM
6-40
CDP1824, CDP1824C
Data Retention Specifications at T
PARAMETERSYMBOL
Data Retention VoltageV
Data Retention Quiescent CurrentI
Chip Deselect to Data Retention
Time
Recovery to Normal Operation Timet
t
= -40oC to +85oC; See Figure 3
A
TEST CONDITIONSLIMITS
DR
DD
CDR
RC
MA4
MA3
MA2
MA1
MA0
VDR = 2.5V--10-40µA
VDR = 2.5V5600-600-ns
VDR = 2.5V5600-600-ns
21
3
ADDRESS
4
DECODER
5
V
DD
(V)
CDP1824CDP1824C
MINMAXMINMAX
UNITS
-2.5-2.5-V
10300---ns
10300---ns
32 X 8-BIT
ARRAY
SENSE
AMPL
17
MWR
I/O BUFFERS
15
CS
V
= 18
DD
V
= 9
SS
678 10 11 12 13 14
BUS7BUS6BUS5BUS4BUS3BUS2BUS1BUS
FIGURE 4. FUNCTIONAL DIAGRAM
CPU/ROM SYSTEMRAM SYSTEM
ADDRESS
MA0-MA7MA0-MA7MA0-MA7
TPA
MRD
MWR
CPU
CDP1802
TPA
MRD
ROM
0
MRD
MWR
RAM
CDP1824
CSCE0
BUS0-BUS7BUS0-BUS7BUS0-BUS7
16
MRD
DAT A
FIGURE 5. CDP1824 (128 X 8) MINIMUM SYSTEM (128 X 8)
6-41
CDP1824, CDP1824C
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reser ves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for an y infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under an y patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.inter sil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
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6-42
ASIA
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