Intersil Corporation CD4556BMS, CD4555BMS Datasheet

December 1992

CD4555BMS CD4556BMS

CMOS Dual Binary to 1 of 4

Decoder/Demultiplexers

Features

• High Voltage Type (20V Rating)

• CD4555BMS: Outputs High on Select

• CD4556BMS: Outputs Low on Select

• Expandable with Multiple Packages

• 100% Tested for Quiescent Current at 20V

• Standardized, Symmetrical Output Characteristics

• Maximum Input Current of 1µA at 18V Over Full Pack-

age Temperature Range; 100nA at 18V and +25

• Noise Margin (Over Full Package/Temperature Range)

- 1V at VDD = 5V

- 2V at VDD = 10V

- 2.5V at VDD = 15V

• 5V, 10V and 15V Parametric Ratings

• Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Speciﬁcations for Description of ‘B’ Series CMOS Devices”

Applications

• Decoding

• Code Conversion

Pinouts

1/2 OF DUAL

Q0 Q1 Q2 Q3

VSS

Q0 Q1 Q2 Q3

VSS

A B

3 4 5 6 7 8

4 5 6 7 8

CD4556BMS

TOP VIEW

CD4555BMS

TOP VIEW

VDD

16 15

E A

Q0 Q1 Q2 Q3

VDD E A B Q0 Q1 Q2 Q3

1/2 OF DUAL

12 11 10

16 15 14 13 12 11 10

• Demultiplexing (Using Enable Input as a Data Input

• Memory Chip-Enable Selection

• Function Selection

Description

CD4555BMS and CD4556BMS are dual one-of-four decoders/demultiplexers. Each decoder has two select inputs (A and B), an Enable input ( puts. On the CD4555BMS the outputs are high on select; on the CD4556BMS the outputs are low on select.

When the Enable input is high, the outputs of the CD4555BMS remain low and the outputs of the CD4556BMS remain high regardless of the state of the select inputs A and B. The CD4555BMS and CD4556BMS are similar to types MC14555 and MC14556, respectively.

The CD4555BMS and CD4556BMS are supplied in these 16-lead outline packages:

Braze Seal DIP *H46 †H4T Frit Seal DIP H1E Ceramic Flatpack H6W *CD4555B Only †CD4556B Only

E), and four mutually exclusive out-

Functional Diagrams

VDD

VSS

CD4555BMS

VDD

VSS

CD4556BMS

7-1249

File Number

3346

Speciﬁcations CD4555BMS, CD4556BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

Package Types D, F, K, H

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-10µA

VDD = 18V, VIN = VDD or GND 3 -55oC-10µA

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

VDD = 18V 3 -55oC - 100 nA Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low (Note 2)

Input Voltage High (Note 2)

Input Voltage Low (Note 2)

Input Voltage High (Note 2)

NOTES: 1. All voltages referenced to device GND, 100% testing being

implemented.

2. Go/No Go test with limits applied to inputs.

VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V

VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V

VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V

VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V

Thermal Resistance . . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W

Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW

For TA = +100oC to +125oC (Package Type D, F, K). . . . . .Derate

Linearity at 12mW/oC to 200mW

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

GROUP A

SUBGROUPS TEMPERATURE

2 +125oC - 1000 µA

2 +125oC -1000 - nA

2 +125oC - 1000 nA

1, 2, 3 +25oC, +125oC, -55oC- 4 V

1, 2, 3 +25oC, +125oC, -55oC11 - V

3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max.

LIMITS

VDD/2

VOL < VDD/2

UNITSMIN MAX

7-1250

Speciﬁcations CD4555BMS, CD4556BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP A

PARAMETER SYMBOL CONDITIONS (NOTE 1, 2)

Propagation Delay A or B Input to any Output

Propagation Delay E to any Output

Transition Time TTHL

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 5 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA

Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA

Input Voltage Low VIL VDD = 10V, VOH > 9V , VOL < 1V 1, 2 +25oC, +125oC,

Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC,

TPHL1 TPLH1

TPHL2 TPLH2

TTLH

VDD = 5V, VIN = VDD or GND 9 +25oC - 440 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 400 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

SUBGROUPS TEMPERATURE

10, 11 +125oC, -55oC - 594 ns

10, 11 +125oC, -55oC - 540 ns

10, 11 +125oC, -55oC - 270 ns

+125oC - 150 µA

+125oC - 300 µA

+125oC - 600 µA

-55oC

-55oC 0.64 - mA

-55oC 1.6 - mA

-55oC 4.2 - mA

-55oC - -0.64 mA

-55oC - -2.0 mA

-55oC - -1.6 mA

-55oC - -4.2 mA

-55oC

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

-50mV

4.95 - V

9.95 - V

-3V

7-V

7-1251

Speciﬁcations CD4555BMS, CD4556BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Propagation Delay A or B Input to any Output

Propagation Delay E to any Output

Transition Time TTHL

Input Capacitance CIN Any Input 1, 2 +25

TPHL1 TPLH1

TPHL2 TPLH2

TTLH

VDD = 10V 1, 2, 3 +25oC - 190 ns VDD = 15V 1, 2, 3 +25oC - 140 ns VDD = 10V 1, 2, 3 +25oC - 170 ns

VDD = 15V 1, 2, 3 +25 VDD = 10V 1, 2, 3 +25

C - 130 ns

C - 100 ns

VDD = 15V 1, 2, 3 +25oC - 80 ns

C - 7.5 pF

NOTES:

1. All voltages referenced to device GND.

2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics.

3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25

C-25µA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V N Threshold Voltage

∆VTN VDD = 10V, ISS = -10µA 1, 4 +25oC-±1V

Delta P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V P Threshold Voltage

∆VTP VSS = 0V, IDD = 10µA 1, 4 +25oC-±1V

Delta Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >

VDD/2

Propagation Delay Time TPHL

VDD = 3V, VIN = VDD or GND VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x

TPLH

VOL < VDD/2

+25oC

Limit

NOTES: 1. All voltages referenced to device GND.

2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

3. See Table 2 for +25oC limit.

4. Read and Record

UNITSMIN MAX

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC

PARAMETER SYMBOL DELTA LIMIT

Supply Current - MSI-2 IDD ± 1.0µA Output Current (Sink) IOL5 ± 20% x Pre-Test Reading Output Current (Source) IOH5A ± 20% x Pre-Test Reading

TABLE 6. APPLICABLE SUBGROUPS

MIL-STD-883

CONFORMANCE GROUP

METHOD GROUP A SUBGROUPS READ AND RECORD

Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

PDA (Note 1) 100% 5004 1, 7, 9, Deltas

Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

PDA (Note 1) 100% 5004 1, 7, 9, Deltas

7-1252

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