Intersil Corporation CD4520BMS, CD4518BMS Datasheet

CD4518BMS,
CD4520BMS
December 1992
Features
• CD4518BMS Dual BCD Up Counter
• CD4520BMS Dual Binary Up Counter
• Medium Speed Operation
- 6MHz Typical Clock Frequency at 10V
• Positive or Negative Edge Triggering
• Synchronous Internal Carry Propagation
• 100% Tested for Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
• Noise Margin (Over Full Package/Temperature Range)
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Standardized Symmetrical Output Characteristics
• Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices”
CMOS Dual Up Counters
Pinout
CD4518BMS, CD4520BMS
TOP VIEW
VDD
16 15
RESET B Q4B
14
Q3B
13
Q2B
12
Q1B
11
ENABLE B
10
9
CLOCK B
Q1A Q2A Q3A Q4A
VSS
1 2 3 4 5 6 7 8
CLOCK A
ENABLE A
o
C
RESET A
Functional Diagram
Applications
• Multistage Synchronous Counting
• Multistage Ripple Counting
• Frequency Dividers
Description
CD4518BMS Dual BCD Up Counter and CD4520BMS Dual Binary Up Counter each consist of two identical, internally synchronous 4-stage counters. The counter stages are D-type flip-flops having interchangeable CLOCK and ENABLE lines for incrementing on either the positive-going or negative-going transition. For single unit operation the ENABLE input is maintained high and the counter advances on each positive-going transition of the CLOCK. The counters are cleared by high levels on their RESET lines.
The counter can be cascaded in the ripple mode by connect­ing Q4 to the enable input of the subsequent counter while the CLOCK input of the latter is held low.
The CD4518BMS and CD4520BMS are supplied in these 16-lead outline packages:
Braze Seal DIP H4S Frit Seal DIP H1F Ceramic Flatpack *H6P †H6W *CD4518B Only †CD4520B Only
CLOCK A
ENABLE A
RESET A
CLOCK B
ENABLE B
10
RESET B
15
3
Q1A
14
2
7
912
÷10/÷16
C
÷10/÷16
C
Q2A
5
Q3A
6
R
R
Q4A
11
Q1B
Q2B
13
Q3B
14
Q4B
VSS = 8 VDD = 16
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-1206
File Number
3342
Specifications CD4518BMS, CD4520BMS
Absolute Maximum Ratings Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1)
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-10µA
VDD = 18V, VIN = VDD or GND 3 -55oC-10µA
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
VDD = 18V 3 -55oC - 100 nA Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >
VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC
Input Voltage Low (Note 2)
Input Voltage High (Note 2)
Input Voltage Low (Note 2)
Input Voltage High (Note 2)
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V
VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V
VIL VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VIH VDD = 15V, VOH > 13.5V,
VOL < 1.5V
Thermal Resistance . . . . . . . . . . . . . . . . θ
Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K). . . . . .Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
GROUP A
SUBGROUPS TEMPERATURE
2 +125oC - 1000 µA
2 +125oC -1000 - nA
2 +125oC - 1000 nA
1, 2, 3 +25oC, +125oC, -55oC- 4 V
1, 2, 3 +25oC, +125oC, -55oC11 - V
3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max.
ja
LIMITS
VDD/2
VOL < VDD/2
θ
jc
UNITSMIN MAX
V
7-1207
Specifications CD4518BMS, CD4520BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
PARAMETER SYMBOL CONDITIONS (NOTE 1, 2)
Propagation Delay Clock to Output
Propagation Delay Reset to Ouput
Transition Time (Note 2)
Maximum Clock Input Frequency
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55
Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,
Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,
Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,
Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA
Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA
Input Voltage Low VIL VDD = 10V , VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC,
Input Voltage High VIH VDD = 10V, VOH > 9V , VOL < 1V 1, 2 +25oC, +125oC,
TPHL1 TPLH1
TPHL2 VDD = 5V, VIN = VDD or GND 9 +25oC - 650 ns
TTHL TTLH
FCL VDD = 5V, VIN = VDD or GND 9 +25oC 1.5 - MHz
VDD = 5V, VIN = VDD or GND 9 +25oC - 560 ns
VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA
VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA
SUBGROUPS TEMPERATURE
10, 11 +125oC, -55oC - 756 ns
10, 11 +125oC, -55oC - 878 ns
10, 11 +125oC, -55oC - 270 ns
10, 11 +125oC, -55oC 1.11 - MHz
o
C, +25oC- 5 µA
+125oC - 150 µA
+125oC - 300 µA
+125oC - 600 µA
-55oC
-55oC
-55oC
-55oC
-55oC 0.64 - mA
-55oC 1.6 - mA
-55oC 4.2 - mA
-55oC - -0.64 mA
-55oC - -2.0 mA
-55oC - -1.6 mA
-55oC - -4.2 mA
-55oC
-55oC
LIMITS
UNITSMIN MAX
LIMITS
UNITSMIN MAX
-50mV
-50mV
4.95 - V
9.95 - V
-3V
+7 - V
7-1208
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