Intersil Corporation CD4512BMS Datasheet

CD4512BMS

December 1992

Features

• High-Voltage Types (20-Volt Rating)

• 3-State Outputs

• Standardized, Symmetrical Output Characteristics

• 100% Tested for Quiescent Current at 20V

• 5V, 10V, and 15V Parametric Ratings

• Maximum Input Current of 1µA at 18V Over Full Pack-

age Temperature Range; 100nA at 18V and 25

• Noise Margin (Full Package-Temperature Range):

- 1V at VDD = 5V

- 2V at VDD = 10V

- 2.5V at VDD = 15V

• Meets all Requirements of JEDEC Tentative Standard No. 13B, "Standard Speciﬁcations for Description of ‘B’ Series CMOS Devices"

Applications

• Digital Multiplexing

• Number-sequence Generation

• Signal Gating

Description

CD4512BMS is an 8-channel data selector featuring a threestate output that can interface directly with, and drive, data lines of bus-oriented systems.

The CD4512BMS is supplied in these 16 lead outline packages:

Braze Seal DIP H4S Frit Seal DIP H1E Ceramic Flatpack H3X

CMOS Dual 4-Bit Latch

Pinout

CD4512BMS

TOP VIEW

VSS

Functional Diagram

3-STATE DISABLE

INHIBIT

D0-1 D1-2 D2-3

CHANNELS

INPUTS

SELECT

CONTROL

D3-4 D4-5 D5-6 D6-7 D7-9 A-11 B-12 C-13

10 15

CD4512BMS

VDD

3-STATE DISABLE

SEL. OUTPUT

INHIBIT

14 SELECT

OUTPUT

VDD = 16 VSS = 8

7-1180

File Number

3340

Speciﬁcations CD4512BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range. . . . . . . . . . . . . . . . -55

Package Types D, F, K, H

Storage Temperature Range (TSTG). . . . . . . . . . . -65

C to +125oC

C to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-10µA

VDD = 18V, VIN = VDD or GND 3 -55

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

VDD = 18V 3 -55oC - 100 nA Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low

VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V

(Note 2) Input Voltage High

VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V

(Note 2) Input Voltage Low

(Note 2) Input Voltage High

(Note 2) Tri-State Output

Leakage

VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V

VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V

IOZL VIN = VDD or GND

VOUT = 0V

VDD = 20V 1 +25oC -0.4 - µA

VDD = 18V 3 -55oC -0.4 - µA Tri-State Output

Leakage

IOZH VIN = VDD or GND

VOUT = VDD

VDD = 20V 1 +25oC - 0.4 µA

VDD = 18V 3 -55oC - 0.4 µA NOTES: 1. All voltages referenced to device GND, 100% testing being

implemented.

2. Go/No Go test with limits applied to inputs.

Thermal Resistance . . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W

Flatpack Package . . . . . . . . . . . . . . . . 70

C/W 20oC/W

Maximum Package Power Dissipation (PD) at +125oC

= -55oC to +100oC (Package Type D, F, K) . . . . . .500mW

For T

= +100oC to +125oC (Package Type D, F, K). . . . . .Derate

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

Linearity at 12mW/oC to 200mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

GROUP A

LIMITS

SUBGROUPS TEMPERATURE

2 +125oC - 1000 µA

C-10µA

C -100 - nA

2 +125oC -1000 - nA

2 +125oC - 1000 nA

VOL <

VDD/2

1, 2, 3 +25oC, +125oC, -55oC- 4 V

1, 2, 3 +25oC, +125oC, -55oC11 - V

2 +125oC -12 - µA

2 +125oC-12µA

3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max.

UNITSMIN MAX

7-1181

Speciﬁcations CD4512BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP A

PARAMETER SYMBOL CONDITIONS

Propagation Delay Inhibit to Output

Propagation Delay “A” Select to Output

Propagation Delay Data to Output

Propagation Delay 3-State Disable

Transition Time TTHL

NOTES:

1. All voltages referenced to device GND.

2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics.

3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

TPHL1 TPLH1

TPHL2 TPLH2

TPHL3 TPLH3

TPHZ TPZH

TPLZ TPZL

TTLH

VDD = 5V, VIN = VDD or GND (Note 1, 2)

VDD = 5V, VIN = VDD or GND (Note 2, 3)

SUBGROUPS TEMPERATURE

9 +25oC - 280 ns

10, 11 +125oC, -55oC - 378 ns

9 +25oC - 400 ns

10, 11 +125oC, -55oC - 540 ns

9 +25oC - 360 ns

10, 11 +125oC, -55oC - 486 ns

9 +25oC - 120 ns

10, 11 +125oC, -55oC - 162 ns

9 +25oC - 120 ns

10, 11 +125oC, -55oC - 162 ns

9 +25oC - 200 ns

10, 11 +125oC, -55oC - 270 ns

LIMITS

UNITSMIN MAX

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 5 µA

+125oC - 150 µA

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

+125oC - 300 µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

+125oC - 600 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,

-55oC

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,

-55oC

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,

-55oC

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,

-55oC

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA

-55oC 0.64 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA

-55oC 1.6 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA

-55oC 4.2 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA

-55oC - -0.64 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA

-55oC - -2.0 mA

-50mV

4.95 - V

9.95 - V

UNITSMIN MAX

7-1182

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