Intersil Corporation CD4511BMS Datasheet

December 1992

CD4511BMS

CMOS BCD-to-7-Segment

Latch Decoder Drivers

Features

• High Voltage Type (20V Rating)

• High Output Sourcing Capability up to 25mA

• Input Latches for BCD Code Storage

• Lamp Test and Blanking Capability

• 7 Segment Outputs Blanked for BCD Input Codes
> 1001

• 100% Tested for Quiescent Current at 20V

• 5V, 10V and 15V Parametric Ratings

• Maximum Input Current of 1µA at 18V Over Full Pack­age Temperature Range; 100nA at 18V and +25

o

C

Applications

• Driving Common Cathode LED Displays

• Multiplexing with Common Cathode LED Displays

• Driving Incandescent Displays

• Driving Low Voltage Fluorescent Displays

Description

CD4511BMS is a BCD-to-7-Segment latch decoder drivers
constructed with CMOS logic and n-p-n bipolar transistor
output devices on a single monolithic structure. These
devices combine the low quiescent power dissipation and
high noise immunity features of Intersil CMOS with n-p-n
bipolar output transistors capable of sourcing up to 25mA.
This capability allows the CD4511BMS types to drive LED’s
and other displays directly.

Lamp Test (
inputs are provided to test the display, shut off or intensity
modulate it, and store or strobe a BCD code, respectively.
Several different signals may be multiplexed and displayed
when external multiplexing circuitry is used.

LT), Blanking (BL), and Latch Enable or Strobe

Pinout

CD4511BMS

TOP VIEW

1

B

2

C

3

LT

4

BL

VSS

5

D

6

A

7
8

/STROBE

LE

Functional Diagram

LT

7

A

1

B

BCD

INPUTS

C

D

LE/STROBE

VSS = 8
VDD = 16

L
A
T
C

2

H

6

5

BL

VDD

16

f

15
14

g

13

a

12

b

11

c
d

10

e

9

3

13

a

12

D
E
C
O
D
E
R

4

D
R

I
V
E
R

b

11

c

7

10

SEGMENT

d

OUTPUTS

9

e

15

f

14

g

These devices are similar to the type MC14511.
The CD4511BMS is supplied in these 16-lead outline

packages:

7-Segment Display

Braze Seal DIP H4W
Frit Seal DIP H2R
Ceramic Flatpack H6W

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

7-1169

a

g

b

f

e

c

d

File Number

3339

Specifications CD4511BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

Package Types D, F, K, H

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-10µA

VDD = 18V, VIN = VDD or GND 3 -55oC-10µA

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1 +25oC 14.1 - V

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC1-mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 2.6 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 6.8 - mA
Output Drive Voltage LVOH5 VDD = 5V, IOH = -20mA 1 +25oC 3.4 - V
Output Drive Voltage LVOH10 VDD = 10V, IOH = -20mA 1 +25oC 8.6 - V
Output Drive Voltage LVOH15 VDD = 15V, IOH = -20mA 1 +25oC 13.7 - V
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low
(Note 2)

Input Voltage High
(Note 2)

Input Voltage Low
(Note 2)

Input Voltage High
(Note 2)

NOTES: 1. All voltages referenced to device GND, 100% testing being

implemented.

2. Go/No Go test with limits applied to inputs.

VIL VDD = 5V, VOH > 3.6V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V

VIH VDD = 5V, VOH > 3.6V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V

VIL VDD = 15V, VOH > 12.6V,

VOL < 1.5V

VIH VDD = 15V, VOH > 12.6V,

VOL < 1.5V

Thermal Resistance . . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W

Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW

For TA = +100oC to +125oC (Package Type D, F, K). . . . . .Derate

Linearity at 12mW/oC to 200mW

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

GROUP A

SUBGROUPS TEMPERATURE

2 +125oC - 1000 µA

2 +125oC -1000 - nA

2 +125oC - 1000 nA

2 +125oC 14.2 V
3 -55oC 14.0 V

1, 2, 3 +25oC, +125oC, -55oC- 4 V

1, 2, 3 +25oC, +125oC, -55oC11 - V

3. For accuracy, voltage is measured differentially to VDD

ja

LIMITS

VDD/2

VOL <
VDD/2

θ

jc

UNITSMIN MAX

V

7-1170

Specifications CD4511BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP A

PARAMETER SYMBOL CONDITIONS (NOTE 1, 2)

Propagation Delay
Data to Output

Propagation Delay
Data to Output

Transition Time TTHL VDD = 5V, VIN = VDD or GND 9 +25oC - 310 ns

Transition Time TTLH VDD = 5V, VIN = VDD or GND 9 +25oC - 80 ns

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 5 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC 4.1 - V

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC 9.1 - V

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA

Input Voltage Low VIL VDD = 10V, VOH > 9V , VOL < 1V 1, 2 +25oC, +125oC,

Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC,

Propagation Delay
Data to Output

TPHL VDD = 5V, VIN = VDD or GND 9 +25oC - 1040 ns

TPLH VDD = 5V, VIN = VDD or GND 9 +25oC - 1320 ns

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

TPHL VDD = 10V 1, 2, 3 +25oC - 420 ns

VDD = 15V 1, 2, 3 +25oC - 300 ns

SUBGROUPS TEMPERATURE

10, 11 +125oC, -55oC - 1404 ns

10, 11 +125oC, -55oC - 1782 ns

10, 11 +125oC, -55oC - 419 ns

10, 11 +125oC, -55oC - 108 ns

+125oC - 150 µA

+125oC - 300 µA

+125oC - 600 µA

-55oC

-55oC

1, 2 +125oC 4.2 - V
1, 2 -55oC 4.0 - V

1, 2 +125oC 9.2 - V
1, 2 -55oC 9.0 - V

-55oC 0.64 - mA

-55oC 1.6 - mA

-55oC 4.2 - mA

-55oC

-55oC

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

-50mV

-50mV

-3V

+7 - V

7-1171

Specifications CD4511BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS(Continued)

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Propagation Delay
Data to Output

Propagation Delay
(BT)

Propagation Delay
(BT)

Propagation Delay
(LT)

TPLH VDD = 10V 1, 2, 3 +25oC - 520 ns

VDD = 15V 1, 2, 3 +25oC - 360 ns

TPHL VDD = 5V 1, 2, 3 +25oC - 700 ns

o

VDD = 10V 1, 2, 3 +25
VDD = 15V 1, 2, 3 +25

C - 350 ns

o

C - 250 ns

TPLH VDD = 5V 1, 2, 3 +25oC - 800 ns

o

VDD = 10V 1, 2, 3 +25
VDD = 15V 1, 2, 3 +25

C - 350 ns

o

C - 300 ns

TPHL VDD = 5V 1, 2, 3 +25oC - 500 ns

VDD = 10V 1, 2, 3 +25oC - 250 ns
VDD = 15V 1, 2, 3 +25oC - 170 ns

Propagation Delay
(LT)

TPLH VDD = 5V 1, 2, 3 +25oC - 300 ns

VDD = 10V 1, 2, 3 +25oC - 150 ns
VDD = 15V 1, 2, 3 +25oC - 100 ns

Transition Time TTHL VDD = 10V 1, 2, 3 +25oC - 185 ns

VDD = 15V 1, 2, 3 +25oC - 160 ns

Transition Time TTLH VDD = 10V 1, 2, 3 +25oC - 60 ns

VDD = 15V 1, 2, 3 +25oC - 50 ns

Minimum Data Setup
Time

TS VDD = 5V 1, 2, 3 +25oC - 150 ns

VDD = 10V 1, 2, 3 +25oC - 70 ns
VDD = 15V 1, 2, 3 +25oC - 40 ns

Minimum Data Hold Time TH VDD = 5V 1, 2, 3 +25oC-0ns

VDD = 10V 1, 2, 3 +25oC-0ns
VDD = 15V 1, 2, 3 +25oC-0ns

Minimum Strobe Pulse
Width

TW VDD = 5V 1, 2, 3 +25oC - 400 ns

VDD = 10V 1, 2, 3 +25oC - 160 ns
VDD = 15V 1, 2, 3 +25oC - 100 ns

Output Drive Voltage LVOH5 VDD = 5V, IOH = -10mA 1, 2 +25oC 3.9 - V

1, 2 +125oC 3.9 - V

1, 2 -55oC 3.8 - V
VDD = 5V, IOH = -20mA 1, 2 -55oC 3.55 - V
VDD = 5V, IOH = -25mA 1, 2 +25oC 3.1 - V

1, 2 -55oC 3.4 - V

Output Drive Voltage LVOH10 VDD = 10V, IOH = -10mA 1, 2 +25oC 9.0 - V

1, 2 +125oC 9.0 - V

1, 2 -55oC 8.85 - V
VDD = 10V, IOH = -20mA 1, 2 +125oC 8.4 - V

1, 2 -55oC 8.7 - V
VDD = 10V, IOH = -25mA 1, 2 +25oC 8.3 - V

1, 2 -55oC 8.6 - V

UNITSMIN MAX

7-1172

Specifications CD4511BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS(Continued)

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Output Drive Voltage LVOH15 VDD = 15V, IOH = -10mA 1, 2 +25oC 14.0 - V

1, 2 +125oC 14.0 - V

1, 2 -55oC 13.9 - V

o

VDD = 15V, IOH = -20mA 1, 2 +125

1, 2 -55

C 13.5 - V

o

C 13.75 - V

VDD = 15V, IOH = -25mA 1, 2 +25oC 13.5 - V

o

1, 2 -55

Input Capacitance CIN Any Input 1, 2 +25

C 13.65 - V

o

C - 7.5 pF

NOTES:

1. All voltages referenced to device GND.

2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.

3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC-25µA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V
N Threshold Voltage

∆VTN VDD = 10V, ISS = -10µA 1, 4 +25oC-±1V

Delta
P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V
P Threshold Voltage

∆VTP VSS = 0V, IDD = 10µA 1, 4 +25oC-±1V

Delta
Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >

VDD/2

Propagation Delay Time TPHL

VDD = 3V, VIN = VDD or GND
VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x

TPLH

VOL <
VDD/2

+25oC

Limit

NOTES: 1. All voltages referenced to device GND.

2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

3. See Table 2 for +25oC limit.

4. Read and Record

UNITSMIN MAX

UNITSMIN MAX

V

ns

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC

PARAMETER SYMBOL DELTA LIMIT

Supply Current - MSI-2 IDD ± 1.0µA
Output Current (Sink) IOL5 ± 20% x Pre-Test Reading
Output Current (Source) IOH5A ± 20% x Pre-Test Reading

TABLE 6. APPLICABLE SUBGROUPS

MIL-STD-883

CONFORMANCE GROUP

METHOD GROUP A SUBGROUPS READ AND RECORD

Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

7-1173

Specifications CD4511BMS

TABLE 6. APPLICABLE SUBGROUPS (Continued)

MIL-STD-883

CONFORMANCE GROUP

PDA (Note 1) 100% 5004 1, 7, 9, Deltas

Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11

Subgroup B-6 Sample 5005 1, 7, 9

Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3

NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.

CONFORMANCE GROUPS

Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4

METHOD GROUP A SUBGROUPS READ AND RECORD

TABLE 7. TOTAL DOSE IRRADIATION

MIL-STD-883

METHOD

PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD

TEST READ AND RECORD

TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS

OSCILLATOR

FUNCTION OPEN GROUND VDD 9V ± -0.5V

Static Burn-In 1
(Note 1)

Static Burn-In 2
(Note 1)

Dynamic Burn­In (Note 1)

Irradiation
(Note 2)

NOTES:

1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V

2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V

9-15 1-8 16

9-15 8 1-7, 16

9-15 5, 8 3, 4, 16 - 1, 2, 7 6

9-15 8 1-7, 16

50kHz 25kHz

7-1174

Logic Diagram

CD4511BMS

VDD

(BL)

P

TG

N

*

A

*

B

*

C

P

TG

N

P

TG

N

P

TG

N

P

TG

N

P

TG

N

P

TG

N

*

DRIVER

LOGIC

VSS

IOH

VOH

OUTPUT

DRIVERS

+

-

a

b

c

d

e

f

TG

P
N

g

STROBE

LE/

*

D

*

*

LT

ALL INPUTS ARE PROTECTED

*

BY CMOS PROTECTION NETWORK

FIGURE 1.

TRUTH TABLE

LE BI LTDCBAabcdefgDISPLAY

XX0XXXX1111111
X01XXXX0000000 Blank
01100001111110
01100010110000
01100101101101
01100111111001

VDD

VSS

01101000110011
01101011011011

7-1175

CD4511BMS

TRUTH TABLE (Continued)

LE BI LTDCBAabcdefgDISPLAY

01101100011111
01101111110000
01110001111111
01110011110011
01110100000000 Blank
01110110000000 Blank
01111000000000 Blank
01111010000000 Blank
01111100000000 Blank
01111110000000 Blank
111XXXX * *

X = Don’t Care
* Depends on BCD code previously applied when LE = 0

NOTE: Display is blank for all illegal input codes (BCD > 1001).

Typical Performance Characteristics

AMBIENT TEMPERATURE (TA) = +25oC

30

25

20

15

10

5

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

0 5 10 15

FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT

GATE-TO-SOURCE VOLTAGE (VGS) = 15V

10V

5V

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

CHARACTERISTICS

700

600

500

400

300

200

100

PROPAGATION DELAY TIME (tPLH) (ns)

0 25 50 75 100

AMBIENT TEMPERATURE (TA) = +25oC

LOAD CAPACITANCE (CL) (pF)

SUPPLY VOLTAGE (VDD) = 5V

10V

15V

FIGURE 3. TYPICAL DATA-T O-OUTPUT , LOW -TO-HIGH-LEVEL

PROPAGATION DELAY TIME AS A FUNCTION OF
LOAD CAPACITANCE

7-1176

Typical Performance Characteristics

700

AMBIENT TEMPERATURE (TA) = +25oC

600

500

SUPPLY VOLTAGE (VDD) = 5V

CD4511BMS

AMBIENT TEMPERATURE (TA) = +25oC

60

SUPPLY VOLTAGE (VDD) = 5V

50

400

300

10V

200

100

15V

PROPAGATION DELAY TIME (tPLH) (ns)

0 25 50 75 100

LOAD CAPACITANCE (CL) (pF)

FIGURE 4. TYPICAL DATA-T O-OUTPUT , HIGH-T O-LOW-LEVEL

PROPAGATION DELAY TIME AS A FUNCTION OF
LOAD CAPACITANCE

AMBIENT TEMPERATURE (TA) = +25oC

500

400

300

200

TRANSITION TIME (tTHL) (ns)

100

SUPPLY VOLTAGE (VDD) = 5V

10V

15V

40

30

10V

15V

20

TRANSITION TIME (tTLH) (ns)

10

0

25 50 75 100

LOAD CAPACITANCE (CL) (pF)

FIGURE 5. TYPICAL LOW-TO-HIGH-LEVEL TRANSITION TIME

AS A FUNCTION OF LOAD CAPACITANCE

AMBIENT TEMPERATURE (TA) = +25oC

25

SUPPLY VOLTAGE (VDD) = 15V

20

15

10

5

OUTPUT SOURCE CURRENT (IOH) (mA)

10V

5V

0

100 200 300 400 500

LOAD CAPACITANCE (CL) (pF)

FIGURE 6. TYPICAL HIGH-TO-LOW TRANSITION TIME AS A

FUNCTION OF LOAD CAPACITANCE

5

10

8
6

AMBIENT TEMPERATURE (TA) = +25oC

4
2

4

10

8
6

4

SUPPLY VOLTS (VDD) = 15V

2

3

10

8
6

4
2

2

10

8
6

4
2

1

10

8
6

4
2

DYNAMIC POWER DISSIPATION (PD) (µW)

0

10

10

8642

-2

-1

10

FREQUENCY (f) (kHz)

FIGURE 8. TYPICAL DYNAMIC POWER DISSIPATION CHARACTERISTICS

0 0.5 1 1.5

SUPPLY VOLTAGE - OUTPUT DRIVE VOLTAGE (VDD - VOH) (V)

FIGURE 7. TYPICAL VOLT AGE DROP (VDD TO OUTPUT) vs OUT-

PUT SOURCE CURRENT AS A FUNCTION OF SUPPL Y

10V

10V

5V

CL = 50pF
CL = 15pF

8642

10

8642

0

10

8642

1

2

10

8642

3

10

7-1177

Applications Interfacing with Various Displays

CD4511BMS

A
B

BCD

INPUTS

DUTY CYCLE = 100%
ISEG = IDIODEAVG. =

VOH - VDF

R =

C
D

LE

BL

TO VDD

ISEG

VDD

LT

LATCH

8

DECODER

CD4511BMS

20mA AT LUMINOUS INTENSITY/SEGMENT = 250µcd

VSS

VDD

VDD

VSS

+

VOH

-

e

g

ISEG

Ra
Rb
Rc
Rd
R
Rf
R

LED 7-SEGMENT

DISPLAY

VDF

+

-

FIGURE 9. DRIVING COMMON CATHODE 7-SEGMENT LED DISPLAYS (EXAMPLE HEWLET-PACKARD 5082-7740)

LT

A
B
C
D

VDD

a
b
c
d
e

f

LE

BL

VDD

A MEDIUM BRIGHTNESS INTENSITY DISPLAY CAN BE OBTAINED WITH
LOW VOLTAGE FLUORESCENT DISPLAYS SUCH AS THE TUNG-SOL
DIGIVAC S/G* SERIES

* Trademark Tung-Sol Division Wagner Electric Co.

CD4511BMS

VSS

g

1.6V
AC OR DC

LT

A
B
C
D

LE

VDD

BL

2 OF 7 SEGMENTS SHOWN CONNECTED
RESISTORS R FROM VDD TO EACH 7-SEGMENT DRIVER OUTPUT ARE

CHOSEN TO KEEP ALL NUMITRON SEGMENTS SLIGHTL Y ON AND WARM

CD4511BMS

VSS

VDD = 5V

a
b
c
d
e

f

g

VDD

R ≈
400Ω

VDD

R ≈ 400Ω

FIGURE 10. DRIVING LOW VOLTAGE FLOURESCENT DISPLAYS FIGURE 11. DRIVING INCANDESCENT DISPLAYS (RCA NU-

MITRON DR2000 SERIES DISPLAYS)

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

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1178

CD4511BMS

Applications

MULTIPLEXING SCHEME SHOWING

2 OF 7 SEGMENTS CONNECTED

TRANSISTORS T1 - T4 (2N3053 OR 2N2102)
HAVE IC MAX. RATING > 7 x ISEG

DUTY CYCLE = 25%
ISEG = (IDIODEAVG) x 4

(VOH - VDF-VCE)

R =

ISEG

Interfacing with Various Displays (Continued)

CD4511BMS

Q0
Q1

Q2

Q3

VDD

a
b
c
d
e

f

g

+

-

R

R

VOH

5

6

7

1

CD4024BMS

2

VO1

V02

VO3

LT

A
B
C
D

LE

VDD

BL

2 4

12

311

CD4555BMS

1

9

VSS

VSS

ISEG

+

VDF

-

T1
VSS

+
VCE

­T2

VSS

T3

VSS

T4

VSS

FIGURE 12. MULTIPLEXING WITH COMMON CATHODE 7-SEGMENT LED DISPLAYS (EXAMPLE HEWLET-PACKARD 5082-7404

4 CHARACTER DISPLAY OR 4 DISCRETE MONOSANTO MAN 3 DISPLAYS)

Waveforms

20ns

20ns

10%

50%

90%

50%

10%

20ns

10%

tSU

90%

tW

50%

90%

VDD

tHOLD

50%

20ns

VDD

0
VDD

0

FOR SETUP

FOR HOLD

0

OUTPUT

tr, tf = 20ns

DATA

INPUT

tPHL

tr tf

VDD

90%
50%
10%

tTLHtTHL

90%
50%
10%

tPLH

0

VDD

0

LE

DATA

INPUTS

OUTPUT

STROBE

tr, tf = 20ns

FIGURE 13. DYNAMIC WAVEFORMS

Chip Dimensions and Pad Layout

7-1179

Dimensions in parenthesis are in millimeters and are
derived from the basic inch dimensions as indicated.
Grid graduations are in mils (10

-3

inch).

METALLIZATION: Thickness: 11kÅ − 14kÅ, AL.
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches