Intersil Corporation CD4516BMS, CD4510BMS Datasheet

CD4510BMS, CD4516BMS

Data Sheet December 1992 File Number 3338

CMOS Presettable Up/Down Counters

CD4510BMS Presettable BCD Up/Down Counter and the
CD4516BMS Presettable Binary Up/Down counter consist of
four synchronously clocked D-type flip-flops (with a gating
structure to provide T-type flip-flop capability) connected as
counters. These counters can be cleared by a high level on
the RESET line, and can be preset to any binary number
present on the jam inputs by a high level on the PRESET
ENABLE line. The CD4510BMS will count out of non-BCD
counter states in a maximum of two clock pulses in the up
mode, and a maximum of four clock pulses in the down mode.

If the CARRY IN input is held low, the counter advances up or
down on each positive-going clock transition. Synchronous
cascading is accomplished by connecting all clock inputs in
parallel and connecting the CARRY OUT of a less significant
stage to the CARRY IN of a more significant stage.

The CD4510BMS and CD4516BMS can be cascaded in the
ripple mode by connecting the CARRY OUT to the clock of
the next stage. If the UP/DOWN input changes during a ter­minal count, the CARRY OUT must be gated with the clock,
and the UP/DOWN input must change while the clock is
high. This method provides a clean clock signal to the sub­sequent counting stage. (See Figures 13, 14.)

These devices are similar to types MC14510 and MC14516.

Features

• High Voltage Types (20V Rating)

• CD4510BMS - BCD Type

• CD4516BMS - Binary Type

• Medium Speed Operation

- fCL = 8MHz Typ. at 10V

• Synchronous Internal Carry Propagation

• Reset and Preset Capability

• 100% Tested for Quiescent Current at 20V

• 5V, 10V and 15V Parametric Ratings

• Standardized Symmetrical Output Characteristics

• Maximum Input Current of 1µA at 18V Over Full Pack-

age Temperature Range; 100nA at 18V and +25

• Noise Margin (Over Full Package/Temperature Range)

- 1V at VDD = 5V

- 2V at VDD = 10V

- 2.5V at VDD = 15V

• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”

o

C

The CD4510BMS and CD4516BMS are supplied in these
16-lead outline packages:

Braze Seal DIP *H4W †H45
Frit Seal DIP *FBF †H1F
Ceramic Flatpack H6W
*CD4510B Only †CD4516B Only

Pinout

CD4510BMS, CD4516BMS

TOP VIEW

VDD

PRESET ENABLE

Q4

P4
P1

CARRY IN

Q1

CARRY OUT

VSS

1
2
3
4
5
6
7
8

16
15

CLOCK
Q3

14

P3

13

P2

12

Q2

11

UP/DOWN

10

9

RESET

Applications

• Up/Down Difference Counting

• Multistage Synchronous Counting

• Multistage Ripple Counting

• Synchronous Frequency Dividers

Functional Diagram

PRESET ENABLE

1

4

P1

12

P2

13

P3

3

P4

CLOCK

UP/DOWN

CARRY IN

RESET

15
10

5

9

6
11
14

2

7

Q1
Q2
Q3
Q4

CARRY OUT

VDD = 16
VSS = 8

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

CD4510BMS, CD4516BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . .-0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V

DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC

Package Types D, F, K, H

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-10µA

VDD = 18V, VIN = VDD or GND 3 -55oC-10µA

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low
(Note 2)

Input Voltage High
(Note 2)

Input Voltage Low
(Note 2)

Input Voltage High
(Note 2)

NOTES: 1. All voltages referenced to device GND, 100% testing being im-

plemented.

2. Go/No Go test with limits applied to inputs.

VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V

VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V

VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V

VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V

Thermal Resistance. . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W

Flatpack Package. . . . . . . . . . . . . . . . 70oC/W 20oC/W

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW

For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate

Linearity at 12mW/oC to 200mW

Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC

GROUP A

SUBGROUPS TEMPERATURE

2 +125oC - 1000 µA

2 +125oC -1000 - nA

2 +125oC - 1000 nA

1, 2, 3 +25oC, +125oC, -55oC- 4 V

1, 2, 3 +25oC, +125oC, -55oC11 - V

3. Foraccuracy,voltage ismeasured differentially toVDD. Limitis

0.050V max.

ja

LIMITS

VDD/2

VOL <
VDD/2

θ

jc

UNITSMIN MAX

V

2

CD4510BMS, CD4516BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1, 2)

Propagation Delay
Clock to Q Output

Propagation Delay
Preset or Reset to Q

Propagation Delay
Clock to Carry Out

Propagation Delay
Carry In to Carry Out

Propagation Delay
Preset or Reset to Carry
Out

Transition Time TTHL

Maximum Clock Input Fre­quency

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

3. Reset to Carry Out (TPLH) only.

TPHL1
TPLH1

TPHL2
TPLH2

TPHL3
TPLH3

TPHL4
TPLH4

TPHL5
TPLH5

TTLH

FCL VDD = 5V, VIN = VDD or GND 9 +25oC 2 - MHz

VDD = 5V, VIN = VDD or GND 9 +25oC - 400 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 420 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 480 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 250 ns

VDD = 5V, VIN = VDD or GND
(Note 3)

VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns

GROUP A

SUBGROUPS TEMPERATURE

10, 11 +125oC, -55oC - 540 ns

10, 11 +125oC, -55oC - 567 ns

10, 11 +125oC, -55oC - 648 ns

10, 11 +125oC, -55oC - 338 ns

9 +25oC - 640 ns

10, 11 +125oC, -55oC - 864 ns

10, 11 +125oC, -55oC - 270 ns

10, 11 +125oC, -55oC 1.48 - MHz

LIMITS

UNITSMIN MAX

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 5 µA

+125oC - 150 µA

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

+125oC - 300 µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

+125oC - 600 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, -

55oC

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -

55oC

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -

55oC

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -

55oC

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA

-55oC 0.64 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA

-55oC 1.6 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA

-55oC 4.2 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA

-55oC - -0.64 mA

-50mV

-50mV

4.95 - V

9.95 - V

UNITSMIN MAX

3

CD4510BMS, CD4516BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA

-55oC - -2.0 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA

-55oC - -1.6 mA

Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA

-55oC - -4.2 mA

Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -

55oC

Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -

55oC

Propagation Delay
Clock to Q Output

Propagation Delay
Preset or Reset to Q

Propagation Delay
Clock to Carry Out

Propagation Delay
Carry In to Carry Out

Propagation Delay Preset
or Reset to Carry Out

Transition Time TTLH

Maximum Clock Input Fre­quency

Minimum Hold Time
Preset Enable to JN

MinimumDataSetup Time
Preset Enable to JN

Minimum Data Hold Time
Clock to Carry In

Minimum Clock HoldTime
Clock to Up/Down

Input Capacitance CIN Any Input 1, 2 +25oC - 7.5 pF

NOTES:

1. All voltages referenced to device GND.

2. The parameterslistedon Table 3 are controlledvia design or process and are not directly tested. These parameters are characterized on initial
design release and upon design changes which would affect these characteristics.

3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

4. Reset to Carry Out (TPLH) only.

TPHL1
TPLH1

TPHL2
TPLH2

TPHL3
TPLH3

TPHL4
TPLH4

TPHL5
TPLH5

TTHL

FCL VDD = 10V 1, 2 +25oC 4 - MHz

TH VDD = 5V 1, 2, 3 +25oC - 70 ns

TS VDD = 5V 1, 2, 3 +25oC - 25 ns

TH VDD = 5V 1, 2, 3 +25oC - 60 ns

TH VDD = 5V 1, 2, 3 +25oC - 30 ns

VDD = 10V 1, 2, 3 +25oC - 200 ns
VDD = 15V 1, 2, 3 +25oC - 150 ns
VDD = 10V 1, 2, 3 +25oC - 210 ns
VDD = 15V 1, 2, 3 +25oC - 160 ns
VDD = 10V 1, 2, 3 +25oC - 240 ns
VDD = 15V 1, 2, 3 +25oC - 180 ns
VDD = 10V 1, 2, 3 +25oC - 120 ns
VDD = 15V 1, 2, 3 +25oC - 100 ns
VDD = 10V 1, 2, 3, 4 +25oC - 320 ns
VDD = 15V 1, 2, 3, 4 +25oC - 250 ns
VDD = 10V 1, 2, 3 +25oC - 100 ns
VDD = 15V 1, 2, 3 +25oC - 80 ns

VDD = 15V 1, 2 +25oC 5.5 - MHz

VDD = 10V 1, 2, 3 +25oC - 40 ns
VDD = 15V 1, 2, 3 +25oC - 40 ns

VDD = 10V 1, 2, 3 +25oC - 10 ns
VDD = 15V 1, 2, 3 +25oC - 10 ns

VDD = 10V 1, 2, 3 +25oC - 30 ns
VDD = 15V 1, 2, 3 +25oC - 30 ns

VDD = 10V 1, 2, 3 +25oC - 30 ns
VDD = 15V 1, 2, 3 +25oC - 30 ns

-3V

+7 - V

UNITSMIN MAX

4