Intersil Corporation CD4503BMS Datasheet

CD4503BMS

December 1992 File Number 3335

CMOS Hex Buffer

CD4503BMS is a hex noninverting buffer with 3 state
outputs having high sink and source current capability. Two
disable controls are provided, one of which controls four
buffers and the other controls the remaining two buffers.

The CD4503BMS is supplied in these 16-lead outline packages:
Braze Seal DIP H4T

Frit Seal DIP H1E
Ceramic Flatpack H6W

Features

• High Voltage Type (20V Rating)

• 3 State Non-Inverting Type

• 1 TTL Load Output Drive Capability

• 2 Output Disable Controls

• 3 State Outputs

• Pin Compatible with Industry Types MM80C97,
MC14503, and 340097

• 5V, 10V and 15V Parametric Ratings

• Maximum Input Current of 1µA at 18V Over Full Pack­age Temperature Range; 100nA at 18V and +25

o

C

• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”

Applications

• 3 State Hex Buffer for Interfacing ICs with Data Buses

• COS/MOS to TTL Hex Buffer

Pinout

DIS A

D1
Q1
D2
Q2
D3
Q3

VSS

CD4503BMS

TOP VIEW

1
2
3
4
5
6
7
8

Functional Diagram

D1

D2

D3

D4

D5

D6

1

2

4

6

10

12

14

15

3

Q1

5

Q2

7

Q3

9

Q4

11

Q5

13

Q6

DISABLE A

16

VDD

15

DIS B

14

D6

13

DQ6

12

D5

11

Q5

10

D4

9

Q4

DISABLE B

VDD = 16
VSS = 8

4-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

CD4503BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD). . . . . . . . . . . . . . . .-0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V

DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC

Package Types D, F, K, H

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25

VDD = 18V, VIN = VDD or GND 3 -55

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25

VDD = 18V 3 -55

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25

VDD = 18V 3 -55
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25

VDD = 20V, VIN = VDD or GND 7 +25
VDD = 18V, VIN = VDD or GND 8A +125
VDD = 3V, VIN = VDD or GND 8B -55

Input Voltage Low

VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25

(Note 2)
Input Voltage High

VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25

(Note 2)
Input Voltage Low

(Note 2)
Input Voltage High

(Note 2)
Tri-State Output

Leakage

VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V

VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V

IOZL VIN = VDD or GND

VOUT = 0V

VDD = 20V 1 +25

VDD = 18V 3 -55
Tri-State Output

Leakage

IOZH VIN = VDD or GND

VOUT = VDD

VDD = 20V 1 +25

VDD = 18V 3 -55
NOTES: 1. All voltages referenced to device GND, 100% testing being im-

plemented.

2. Go/No Go test with limits applied to inputs.

Thermal Resistance. . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W

Flatpack Package. . . . . . . . . . . . . . . . 70oC/W 20oC/W

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW

For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate

Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC

GROUP A

SUBGROUPS TEMPERATURE

2 +125

2 +125

2 +125

o

C, +125oC, -55oC - 50 mV

o

C, +125oC, -55oC 14.95 - V

o

C, +125oC, -55oC - 1.5 V

o

C, +125oC, -55oC 3.5 - V

o

1, 2, 3 +25

1, 2, 3 +25

C, +125oC, -55oC- 4 V

o

C, +125oC, -55oC11 - V

2 +125

2 +125

3. Foraccuracy, voltage is measured differentially to VDD. Limit is

0.050V max.

ja

θ

Linearity at 12mW/oC to 200mW

LIMITS

UNITSMIN MAX

o

C-2µA

o

C - 200 µA

o

C-2µA

o

C -100 - nA

o

C -1000 - nA

o

C -100 - nA

o

C - 100 nA

o

C - 1000 nA

o

C - 100 nA

o

C 2.1 - mA

o

C 5.5 - mA

o

C 16.1 - mA

o

C - -1.02 mA

o

C - -4.8 mA

o

C - -2.6 mA

o

C - -6.8 mA

o

C -2.8 -0.7 V

o

C 0.7 2.8 V

o

C VOH >

o

C

o

C

o

C

o

C -0.4 - µA

o

C -12 - µA

o

C -0.4 - µA

o

C - 0.4 µA

o

C-12µA

o

C - 0.4 µA

VDD/2

VOL <
VDD/2

jc

V

4-2

CD4503BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP A

PARAMETER SYMBOL CONDITIONS

Propagation Delay TPHL VDD = 5V, VIN = VDD or GND

(Note 1, 2)

Propagation Delay TPLH VDD = 5V, VIN = VDD or GND

(Note 1, 2)

Propagation Delay3 State TPHZ

TPZH

Propagation Delay3 State TPZL

TPLZ

Transition Time TTHL VDD = 5V, VIN = VDD or GND

Transition Time TTLH VDD = 5V, VIN = VDD or GND

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

3. CL = 50pF, RL = 1K, Input TR, TF < 20ns.

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 1 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, -

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 1.3 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 3.8 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 11.2 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.7 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -3.0 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -1.8 mA

Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -4.8 mA

VDD = 5V, VIN = VDD or GND
(Note 2, 3)

VDD = 5V, VIN = VDD or GND
(Note 2, 3)

(Note 1, 2)

(Note 1, 2)

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA

SUBGROUPS TEMPERATURE

9 +25oC - 110 ns

10, 11 +125oC, -55oC - 149 ns

9 +25oC - 150 ns

10, 11 +125oC, -55oC - 203 ns

9 +25oC - 140 ns

10, 11 +125oC, -55oC - 189 ns

9 +25oC - 180 ns

10, 11 +125oC, -55oC - 243 ns

9 +25oC - 70 ns

10, 11 +125oC, -55oC - 95 ns

9 +25oC - 90 ns

10, 11 +125oC, -55oC - 122 ns

+125oC-30µA

+125oC-60µA

+125oC - 120 µA

55oC

55oC

55oC

55oC

-55oC 2.6 - mA

-55oC 6.5 - mA

-55oC 19.2 - mA

-55oC - -1.2 mA

-55oC - -5.8 mA

-55oC - -3.1 mA

-55oC - -8.2 mA

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

-50mV

-50mV

4.95 - V

9.95 - V

4-3