Intersil Corporation CD4502BMS Datasheet

CD4502BMS

December 1992

Features

• High Voltage Type (20V Rating)

• 2 TTL Load Output Drive Capability

• 3 State Outputs

• Common Output Disable Control

• Inhibit Control

• 100% Tested for Quiescent Current at 20V

• 5V, 10V and 15V Parametric Ratings

• Maximum Input Current of 1µA at 18V Over Full Pack-

age Temperature Range; 100nA at 18V and +25

• Noise Margin (Over Full Package/Temperature Range)

- 1V at VDD = 5V

- 2V at VDD = 10V

- 2.5V at VDD = 15V

• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”

Applications

CMOS Strobed Hex Inverter/Buffer

Pinout

CD4502BMS

TOP VIEW

16
15
14
13
12
11
10

9

VDD
D6
Q6
D5
INHIBIT
Q5
D4
Q4

1

D3
Q3

2

D1

3

OUTPUT DISABLE

o

C

3 STATE

Q1
D2
Q2

VSS

4
5
6
7
8

Functional Diagram

• 3 State Hex Inverter for Interfacing ICs with Data
Buses

• COS/MOS to TTL Hex Buffer

Description

CD4502BMS consists of six inverter/buffers with 3 state
outputs. A logic “1” on the OUTPUT DISABLE input
produces a high impedance state in all six outputs. This
feature permits common busing of the outputs, thus
simplifying system design. A Logic “1” on the INHIBIT input
switches all six outputs to logic “0” if the OUTPUT DISABLE
input is a logic “0”. This device is capable of driving two
standard TTL loads, which is equivalent to six times the
JEDEC “B” series IOL standard.

The CD4502BMS is supplied in these 16-lead outline packages:
Braze Seal DIP H4T

Frit Seal DIP H1F
Ceramic Flatpack H6W

OUTPUT DISABLE

3 STATE

INHIBIT

D1

D2

D3

D4

D5

D6

VDD = 16
VSS = 8

4

12
3

6

1

10

13

15

5

Q1

7

Q2

2

Q3

9

Q4

11

Q5

14

Q6

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

7-473

File Number

3334

Specifications CD4502BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range. . . . . . . . . . . . . . . . -55

Package Types D, F, K, H

Storage Temperature Range (TSTG) . . . . . . . . . . . -65

o

C to +125oC

o

C to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-2µA

VDD = 18V, VIN = VDD or GND 3 -55

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 3.06 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 7.8 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 20.4 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low

VIL5 VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V

(Note 2)
Input Voltage High

VIH5 VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V

(Note 2)
Input Voltage Low

(Note 2)
Input Voltage High

(Note 2)
Tri-State Output

Leakage

VIL15 VDD = 15V, VOH > 13.5V,

VOL < 1.5V

VIH15 VDD = 15V, VOH > 13.5V,

VOL < 1.5V

IOZL VIN = VDD or GND

VDD = 20V 1 +25oC -0.4 - µA

VOUT = 0V

VDD = 18V 3 -55oC -0.4 - µA
Tri-State Output

Leakage

IOZH VIN = VDD or GND

VOUT = VDD

VDD = 20V 1 +25oC - 0.4 µA

VDD = 18V 3 -55oC - 0.4 µA
NOTES: 1. All voltages referenced to device GND, 100% testing being

implemented.

2. Go/No Go test with limits applied to inputs.

Thermal Resistance . . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W

Flatpack Package . . . . . . . . . . . . . . . . 70

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55
For TA = +100

o

C

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

o

C to +100oC (Package Type D, F, K). . . . . . 500mW

o

C to +125oC (Package Type D, F, K) . . . . .Derate

Linearity at 12mW/oC to 200mW

ja

o

C/W 20oC/W

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

GROUP A

LIMITS

SUBGROUPS TEMPERATURE

2 +125oC - 200 µA

o

C-2µA

o

C -100 - nA

2 +125oC -1000 - nA

2 +125oC - 1000 nA

VOL <

VDD/2

VDD/2

1, 2, 3 +25oC, +125oC, -55oC- 4 V

1, 2, 3 +25oC, +125oC, -55oC11 - V

2 +125oC -12 - µA

2 +125oC-12µA

3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.

θ

jc

UNITSMIN MAX

V

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Specifications CD4502BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP A

PARAMETER SYMBOL CONDITIONS

Propagation Delay
Data or Inhibit to Output

Propagation Delay
Data or Inhibit to Output

Propagation Delay
Inhibit to Output

Propagation Delay
Inhibit to Output

Propagation Delay
Disable to Output

Propagation Delay
Disable to Output

Propagation Delay
Disable to Output

Propagation Delay
Disable to Output

Transition Time TTHL VDD = 5V, VIN = VDD or GND

Transition Time TTLH VDD = 5V, VIN = VDD or GND

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

3. VDD = 5V, CL = 50pF, RL = 1K, Input TR, TF < 20ns.

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 1 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 2.16 - mA

TPHL1 VDD = 5V, VIN = VDD or GND

(Note 1, 2)

TPLH1 VDD = 5V, VIN = VDD or GND

(Note 1, 2)

TPHL2 VDD = 5V, VIN = VDD or GND

(Note 1, 2)

TPLH2 VDD = 5V, VIN = VDD or GND

(Note 1, 2)

TPHZ VDD = 5V, VIN = VDD or GND

(Note 2, 3)

TPZH VDD = 5V, VIN = VDD or GND

(Note 2, 3)

TPLZ VDD = 5V, VIN = VDD or GND

(Note 2, 3)

TPZL VDD = 5V, VIN = VDD or GND

(Note 2, 3)

(Note 1, 2)

(Note 1, 2)

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA

SUBGROUPS TEMPERATURE

9 +25oC - 270 ns

10, 11 +125oC, -55oC - 365 ns

9 +25oC - 380 ns

10, 11 +125oC, -55oC - 513 ns

9 +25oC - 270 ns

10, 11 +125oC, -55oC - 365 ns

9 +25oC - 380 ns

10, 11 +125oC, -55oC - 513 ns

9 +25oC - 120 ns

10, 11 +125oC, -55oC - 162 ns

9 +25oC - 220 ns

10, 11 +125oC, -55oC - 297 ns

9 +25oC - 250 ns

10, 11 +125oC, -55oC - 338 ns

9 +25oC - 250 ns

10, 11 +125oC, -55oC - 338 ns

9 +25oC - 120 ns

10, 11 +125oC, -55oC - 162 ns

9 +25oC - 200 ns

10, 11 +125oC, -55oC - 270 ns

+125oC-30µA

+125oC-60µA

+125oC - 120 µA

-55oC

-55oC

-55oC

-55oC

-55oC 3.84 - mA

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

-50mV

-50mV

4.95 - V

9.95 - V

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