Intersil Corporation CD4075BMS, CD4071BMS Datasheet
CD4071BMS, CD4072BMS
CD4075BMS
December 1992
Features
• High-Voltage Types (20V Rating)
• CD4071BMS Quad 2-Input OR Gate
• CD4072BMS Dual 4-Input OR Gate
• CD4075BMS Triple 3-Input OR Gate
• Medium Speed Operation:
- tPHL, tPLH = 60ns (typ) at 10V
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25oC
• Standardized Symmetrical Output Characteristics
• Noise Margin (Over Full Package T emperature Range):
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• 5V, 10V and 15V Parametric Ratings
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
Description
CD4071BMS, CD4072BMS and CD4075BMS OR gates provide the system designer with direct implementation of the
positive-logic OR function and supplement the existing family of CMOS gates.
Pinout
J = A + B + C + D
J = A + B
K = C + C
VSS
NC
VSS
CD4071BMS
TOP VIEW
A
1
2
B
3
4
C
5
6
D
7
CD4072BMS
TOP VIEW
1
2
A
3
B
4
C
5
D
6
7
NC = NO CONNECTION
CMOS OR Gate
14
VDD
13
H
12
G
11
M = G + H
10
L = E + F
9
F
8
E
VDD
14
13
K = E +F + G + H
12
H
11
G
10
F
9
E
8
NC
The CD4071BMS, CD4072BMS and CD4075BMS are supplied
in these 14 lead outline packages:
Braze Seal DIP *H4H †H4Q
Frit Seal DIP H1B
Ceramic Flatpack H3W
*CD4071, CD4072 †CD4075 Only
K = D + E + F
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
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A
B
D
E
VSS
1
2
3
4
5
F
6
7
CD4075BMS
TOP VIEW
14
VDD
13
G
12
H
11
I
10
L = G + H + I
9
J = A + B + C
8
C
File Number
3323
Functional Diagram
CD4071BMS, CD4072BMS, CD4075BMS
VDD
14
B
A
D
C
F
E
12
H
13
G
A
B
C
D
E
10
F
11
G
12
H
1
2
5
6
8
9
VSS
CD4071BMS
VDD
2
3
4
5
9
3
J
4
K
10
L
11
M
7
14
1
J
13
K
C
B
A
F
E
D
11
I
12
H
13
G
CD4072BMS
1
2
8
3
4
5
CD4075BMS
VSS
VDD
VSS
7
14
9
J
6
K
10
L
7
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Specifications CD4071BMS, CD4072BMS, CD4075BMS
Absolute Maximum Ratings Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range. . . . . . . . . . . . . . . . -55
Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . . -65
o
C to +125oC
o
C to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1)
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC - 0.5 µA
VDD = 18V, VIN = VDD or GND 3 -55
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >
VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC
Input Voltage Low
VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V
(Note 2)
Input Voltage High
VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
VIL VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VIH VDD = 15V, VOH > 13.5V,
VOL < 1.5V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
Thermal Resistance . . . . . . . . . . . . . . . . θ
Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55
For TA = +100
o
C
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
o
C to +100oC (Package Type D, F, K). . . . . . 500mW
o
C to +125oC (Package Type D, F, K) . . . . .Derate
Linearity at 12mW/oC to 200mW
ja
o
C/W 20oC/W
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
GROUP A
LIMITS
SUBGROUPS TEMPERATURE
2 +125oC-50µA
o
C - 0.5 µA
o
C -100 - nA
2 +125oC -1000 - nA
2 +125oC - 1000 nA
VOL <
VDD/2
VDD/2
1, 2, 3 +25oC, +125oC, -55oC- 4 V
1, 2, 3 +25oC, +125oC, -55oC11 - V
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
θ
jc
UNITSMIN MAX
V
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