Intersil Corporation CD4068BMS Datasheet
CD4068BMS
December 1992
Features
• High Voltage Type (20V Rating)
• Medium Speed Operation
- TPHL, TPLH = 75ns (Typ.) at VDD = 10V
• Buffered Inputs and Outputs
• 5V, 10V and 15V Parametric Ratings
• Standardized Symmetrical Output Characteristics
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
• Noise Margin (Over Full Package/Temperature Range)
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
Description
CD4068BMS NAND/AND gate provides the system designer
with direct implementation of the positive logic 8 Input NAND and
AND functions and supplements the existing family of CMOS
gates.
The CD4068BMS is supplied in these 14 lead outline packages:
Braze Seal DIP H4H
Frit Seal DIP H1B
Ceramic Flatpack H3W
CMOS 8 Input NAND/AND Gate
Pinout
K = A · B · C · D · E · F · G · H
o
C
Functional Diagram
2
A
3
B
4
C
5
D
9
E
10
F
11
G
12
H
CD4068BMS
TOP VIEW
1
A
2
B
3
C
4
D
5
NC
6
VSS
7
NC = NO CONNECTION
A · B · C · D · E · F · G · H
J =
K = A · B · C · D · E · F · G · H
VDD = 14
VSS = 7
6, 8 = NO CONNECTION
VDD
14
J =
A · B · C · D · E · F · G · H
13
H
12
G
11
F
10
E
9
NC
8
1
K
13
J
Logic Diagram
2
A
3
B
4
C
5
D
9
E
10
F
11
G
12
H
FIGURE 1. LOGIC DIAGRAM
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-985
13
J
1
K
File Number 3320
Specifications CD4068BMS
Absolute Maximum Ratings Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range. . . . . . . . . . . . . . . . -55
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +125oC
o
C to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1)
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25
VDD = 18V, VIN = VDD or GND 3 -55oC - 0.5 µA
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >
VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC
Input Voltage Low
VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V
(Note 2)
Input Voltage High
VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
VIL VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VIH VDD = 15V, VOH > 13.5V,
VOL < 1.5V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
Thermal Resistance . . . . . . . . . . . . . . . . θ
Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55
For TA = +100
o
C
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
o
C to +100oC (Package Type D, F, K). . . . . . 500mW
o
C to +125oC (Package Type D, F, K) . . . . .Derate
Linearity at 12mW/oC to 200mW
ja
o
C/W 20oC/W
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
GROUP A
LIMITS
SUBGROUPS TEMPERATURE
o
C - 0.5 µA
2 +125oC-50µA
o
C -100 - nA
2 +125oC -1000 - nA
2 +125oC - 1000 nA
VOL <
VDD/2
VDD/2
1, 2, 3 +25oC, +125oC, -55oC- 4 V
1, 2, 3 +25oC, +125oC, -55oC11 - V
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
θ
jc
UNITSMIN MAX
V
7-986
Specifications CD4068BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
PARAMETER SYMBOL CONDITIONS (NOTES 1, 2)
Propagation Delay TPHL
TPLH
Transition Time TTHL
TTLH
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.25 µA
Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,
Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,
Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,
Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA
Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA
Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL <
VDD = 5V, VIN = VDD or GND 9 +25oC - 300 ns
VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.5 µA
VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.5 µA
1V
SUBGROUPS TEMPERATURE
10, 11 +125oC, -55oC - 405 ns
10, 11 +125oC, -55oC - 270 ns
+125oC - 7.5 µA
+125oC-15µA
+125oC-30µA
-55oC
-55oC
-55oC
-55oC
-55oC 0.64 - mA
-55oC 1.6 - mA
-55oC 4.2 - mA
-55oC - -0.64 mA
-55oC - -2.0 mA
-55oC - -2.6 mA
-55oC - -4.2 mA
1, 2 +25oC, +125oC,
-55oC
LIMITS
UNITSMIN MAX
LIMITS
UNITSMIN MAX
-50mV
-50mV
4.95 - V
9.95 - V
-3V
7-987
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