Intersil Corporation CD4048BMS Datasheet

December 1992

CD4048BMS

CMOS Multifunction

Expandable 8 Input Gate

Features

• High-Voltage Type (20V Rating)

• Three State Output

• Many Logic Functions Available in One Package

• Standardize, Symmetrical Output Characteristics

• 100% Tested for Quiescent Current at 20V

• Maximum Input Current of 1µA at 18V Over Full Pack-

age Temperature Range; 100nA at 18V and +25

• Noise Margin (Over Full Package Temperature Range):

- 1V at VDD = 5V

- 2V at VDD = 10V

- 2.5V at VDD = 15V

• 5V, 10V and 15V Parametric Ratings

• Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Speciﬁcations for Description of ‘B’ Series CMOS Devices”

Applications

• Selection of Up to 8 Logic Functions

• Digital Control of Logic

• General Purpose Gating Logic

- Decoding

- Encoding

Description

CD4048BMS is an 8-input gate having four control inputs. Three binary control inputs - Ka, Kb, and Kc - provide the implementation of eight different logic functions. These functions are OR, NOR, AND, NAND, OR/AND, OR/NAND, AND/OR and AND/ NOR.

A fourth control input, Kd, provides the user with a 3-state output. When control input Kd is high, the output is either a logic 1 or a logic 0 depending on the inner states. When control input Kd is low, the output is an open circuit. This feature enables the user to connect this device to a common bus line.

Pinout

CD4048BMS

TOP VIEW

VSS

1 2 3

7 8

J (OUTPUT)

Functional Diagram

BINARY CONTROL INPUTS

FUNCTION CONTROL

Ka Kb Kc Kd

10792

EXPAND

INPUTS

VDD

EXPAND

INPUTSINPUTS

3 STATE CONTROL

I J OUTPUT

VSS = 8 VDD = 16

In addition to the eight input lines, an EXPAND input is provided that permits the user to increase the number of inputs into a CD4048BMS (see Figure 2). For example, two CD4048BMS’s can be cascaded to provided a 16-input multifunction gate. When the EXP AND input is not used, it should be connected to VSS.

The CD4048BMS is supplied in these 16 lead outline packages: Braze Seal DIP H4S

Frit Seal DIP H1E Ceramic Flatpack H6W

7-912

File Number

3314

Speciﬁcations CD4048BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range. . . . . . . . . . . . . . . . -55

Package Types D, F, K, H

Storage Temperature Range (TSTG). . . . . . . . . . . -65

C to +125oC

C to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC - 0.5 µA

VDD = 18V, VIN = VDD or GND 3 -55

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

VDD = 18V 3 -55oC - 100 nA Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low

VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V

(Note 2) Input Voltage High

VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V

(Note 2) Input Voltage Low

(Note 2) Input Voltage High

(Note 2) Tri-State Output

Leakage

VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V

VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V

IOZL VIN = VDD or GND

VOUT = 0V

VDD = 20V 1 +25oC -0.4 - µA

VDD = 18V 3 -55oC -0.4 - µA Tri-State Output

Leakage

IOZH VIN = VDD or GND

VOUT = VDD

VDD = 20V 1 +25oC - 0.4 µA

VDD = 18V 3 -55oC - 0.4 µA NOTES: 1. All voltages referenced to device GND, 100% testing being

implemented.

2. Go/No Go test with limits applied to inputs.

Thermal Resistance . . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W

Flatpack Package . . . . . . . . . . . . . . . . 70

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55 For TA = +100

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

C to +100oC (Package Type D, F, K). . . . . . 500mW

C to +125oC (Package Type D, F, K) . . . . .Derate

Linearity at 12mW/oC to 200mW

C/W 20oC/W

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

GROUP A

LIMITS

SUBGROUPS TEMPERATURE

2 +125oC-50µA

C - 0.5 µA

C -100 - nA

2 +125oC -1000 - nA

2 +125oC - 1000 nA

VOL <

VDD/2

1, 2, 3 +25oC, +125oC, -55oC- 4 V

1, 2, 3 +25oC, +125oC, -55oC11 - V

2 +125oC -12 - µA

2 +125oC-12µA

3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max.

UNITSMIN MAX

7-913

Speciﬁcations CD4048BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP A

PARAMETER SYMBOL CONDITIONS (NOTE 1, 2)

Propagation Delay Ka to Output

Transition Time TTHL

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.25 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA

Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA

Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL <

Input Voltage High VIH VDD = 10V, VOH > 9V, VOL <

Propagation Delay Ka to Output

TPHL TPLH

TTLH

TPHL1 TPLH1

VDD = 5V, VIN = VDD or GND 9 +25oC - 600 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.5 µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.5 µA

1V VDD = 10V 1, 2, 3 +25oC - 300 ns VDD = 15V 1, 2, 3 +25oC - 240 ns

SUBGROUPS TEMPERATURE

10, 11 +125oC, -55oC - 810 ns

10, 11 +125oC, -55oC - 270 ns

+125oC - 7.5 µA

+125oC-15µA

+125oC-30µA

-55oC

-55oC 0.64 - mA

-55oC 1.6 - mA

-55oC 4.2 - mA

-55oC - -0.64 mA

-55oC - -2.0 mA

-55oC - -1.6 mA

-55oC - -4.2 mA

1, 2 +25oC, +125oC,

-55oC

1, 2 +25oC, +125oC,

-55oC

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

-50mV

4.95 - V

9.95 - V

-3V

7-V

7-914

Speciﬁcations CD4048BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Propagation Delay Inputs to Output

TPHL2 TPLH2

VDD = 5V 1, 2, 3 +25oC - 600 ns VDD = 10V 1, 2, 3 +25oC - 300 ns VDD = 15V 1, 2, 3 +25oC - 240 ns

Propagation Delay Kb to Output

TPHL3 TPLH3

VDD = 5V 1, 2, 3 +25 VDD = 10V 1, 2, 3 +25

C - 450 ns

C - 170 ns

VDD = 15V 1, 2, 3 +25oC - 110 ns

Propagation Delay Kc to Output

TPHL4 TPLH4

VDD = 5V 1, 2, 3 +25 VDD = 10V 1, 2, 3 +25

C - 280 ns

C - 100 ns

VDD = 15V 1, 2, 3 +25oC - 80 ns

Propagation Delay Expand Input to Output

TPHL5 TPLH5

VDD = 5V 1, 2, 3 +25oC - 380 ns VDD = 10V 1, 2, 3 +25oC - 180 ns VDD = 15V 1, 2, 3 +25oC - 130 ns

Propagation Delay 3 State Kd to Output

TPHZ, LZ TPZH, ZL

VDD = 5V 1, 2, 4 +25oC - 160 ns VDD = 10V 1, 2, 4 +25oC - 70 ns VDD = 15V 1, 2, 4 +25oC - 50 ns

Transition Time TTLH

TTHL

VDD = 10V 1, 2, 3 +25oC - 100 ns

VDD = 15V 1, 2, 3 +25oC - 80 ns Input Capacitance CIN Any Input 1, 2 +25oC-7pF 3 State Output

CO 1, 2 +25oC - 10 pF

Capacitance

NOTES:

1. All voltages referenced to device GND.

2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics.

3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

4. CL = 50pF, RL = 1K, Input TR, TF < 20ns.

UNITSMIN MAX

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

UNITSMIN MAX

Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC-25µA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V N Threshold Voltage

∆VTN VDD = 10V, ISS = -10µA 1, 4 +25oC-±1V

Delta P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V P Threshold Voltage

∆VTP VSS = 0V, IDD = 10µA 1, 4 +25oC-±1V

Delta Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >

VDD/2

Propagation Delay Time TPHL

VDD = 3V, VIN = VDD or GND VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x

TPLH

VOL < VDD/2

+25oC

Limit

NOTES: 1. All voltages referenced to device GND.

2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

3. See Table 2 for +25oC limit.

4. Read and Record

7-915

+ 7 hidden pages