Intersil Corporation CD4022BMS, CD4017BMS Datasheet

CD4017BMS, CD4022BMS

Data Sheet August 1998 File Number 3297

CMOS Counter/Dividers

CD4017BMS - Decade Counter with 10 Decoded Outputs
CD4022BMS - Octal Counter with 8 Decoded Outputs

CD4017BMS and CD4022BMS are 5-stage and 4-stage
Johnson counters having 10 and 8 decoded outputs, respec­tively. Inputs include a CLOCK, a RESET, and a CLOCK INHIBIT
signal. Schmitt trigger action in the CLOCK input circuit provides
pulse shaping that allows unlimited clock input pulse rise and fall
times.

These counters are advanced one count at the positive clock sig­nal transition if the CLOCK INHIBIT signal is low . Counter
advancement via the clock line is inhibited when the CLOCK
INHIBIT signal is high. A high RESET signal clears the counter to
its zero count. Use of the Johnson counter configuration permits
high speed operation, 2-input decode gating and spik e-free
decoded outputs. Anti-lock gating is provided, thus assuring
proper counter sequence. The decoded output are normally low
and go high only at their respective decoded time slot. Each
decoded output remains high for one full clock cycle. A CARRY­OUT signal completes one cycle every 10 clock input cycles in
the CD4017BMS or every 8 clock input cycles in the
CD4022BMS and is used to ripple-clock the succeeding device
in a multi-device counting chain.

The CD4017BMS and CD4022BMS series types are supplied in
these 16 lead outline packages

Braze Seal DIP *H4W †H4X
Frit Seal DIP *H1F †H1E
Ceramic Flatpack H6W
*CD4017B Only † CD4022B Only

Functional Diagrams

CD4017BMS

CLOCK INHIBIT

CLOCK

RESET

VCC = 16
VSS = 8

CLOCK

CLOCK INHIBIT

RESET

VCC = 16
VSS = 8

14
13
15

10

11
12

CD4022BMS

14
13
15

11

10
12

3
2
4
7

1
5
6
9

CARRY OUT

2
1
3
7

4
5

CARRY OUT

“0”
“1”
“2”
“3”
“4”
“5”
“6”
“7”
“8”
“9”

“0”
“1”
“2”
“3”
“4”
“5”
“6”
“7”

DECODED
DECIMAL
OUT

DECODED
OUT

Features

• High Voltage Types (20V Rating)

• Fully Static Operation

• Medium-Speed Operation 10MHz (Typ) at VDD = 10V

• Standardized Symmetrical Output Characteristics

• 100% Tested for Quiescent Current at 20V

• 5V, 10V and 15V Parametric Ratings

• Meets All Requirements of JEDEC Tentative Standard
Number 13A, “Standard Specifications for Description
of ‘B’ Series CMOS Devices”

Applications

• Decade Counter/Decimal Decode Display (CD4017BMS)

• Binary Counter/Decoder

• Frequency Division

• Counter Control/Timers

• Divide-by-N Counting

• For Further Application Information, See ICAN-6166
“COS/MOS MSI Counter and Register Design and
Applications”

Pinouts

CD4017BMS

TOP VIEW

16

VDD

15

RESET

14

CLOCK

13

CLOCK INHIBIT

12

CARRY OUT

11

9

10

4

9

8

16

VDD

15

RESET

14

CLOCK

13

CLOCK INHIBIT

12

CARRY OUT
4

11
10

7

9

NC

NC = NO
CONNECTION

NC = NO
CONNECTION

VSS

NC

VSS

1

5

2

1

3

0

4

2

5

6

6

7

7

3

8

1

1

2

0

3

2

4

5

5

6

6
7

3

8

CD4022BMS

TOP VIEW

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

CD4017BMS, CD4022BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . .-0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC

Package Types D, F, K, H

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-10µA

VDD = 18V, VIN = VDD or GND 3 -55

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25

VDD = 18V 3 -55

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25

VDD = 18V 3 -55
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25

VDD = 20V, VIN = VDD or GND 7 +25
VDD = 18V, VIN = VDD or GND 8A +125
VDD = 3V, VIN = VDD or GND 8B -55

Input Voltage Low

VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25

(Note 2)
Input Voltage High

VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25

(Note 2)
Input Voltage Low

(Note 2)
Input Voltage High

(Note 2)

VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V

VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V

NOTES: 1. All voltages referenced to device GND, 100% testing being im-

plemented.

2. Go/No Go test with limits applied to inputs

Thermal Resistance. . . . . . . . . . . . . . . . θ

ja

θ

jc

Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W

Flatpack Package. . . . . . . . . . . . . . . . 70oC/W 20oC/W

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW

For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate

Linearity at 12mW/oC to 200mW

Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC

GROUP A

SUBGROUPS TEMPERATURE

o

2 +125

2 +125

2 +125

o

C, +125oC, -55oC - 50 mV

o

C, +125oC, -55oC 14.95 - V

o

C, +125oC, -55oC - 1.5 V

o

C, +125oC, -55oC 3.5 - V

o

1, 2, 3 +25

1, 2, 3 +25

C, +125oC, -55oC- 4 V

o

C, +125oC, -55oC11 - V

C - 1000 µA

o

C-10µA

o

C -100 - nA

o

C -1000 - nA

o

C -100 - nA

o

C - 100 nA

o

C - 1000 nA

o

C - 100 nA

o

C 0.53 - mA

o

C 1.4 - mA

o

C 3.5 - mA

o

C - -0.53 mA

o

C - -1.8 mA

o

C - -1.4 mA

o

C - -3.5 mA

o

C -2.8 -0.7 V

o

C 0.7 2.8 V

o

C VOH >

o

C

o

C

o

C

LIMITS

VDD/2

UNITSMIN MAX

VOL <
VDD/2

3. Foraccuracy,voltage ismeasured differentiallyto VDD.Limitis

0.050V max.

V

2

CD4017BMS, CD4022BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP A

PARAMETER SYMBOL CONDITIONS (Note 1, 2)

Propagation Delay
Clock to Decode Out

Propagation Delay
Clock to Carry Out

Propagation Delay
Reset to Out

Transition Time TTHL

Maximum Clock Input Fre­quency

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 5 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, -

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA

Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA

Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -

Input Voltage High VIH VDD = 10V, VOH > 9V , VOL < 1V 1, 2 +25oC, +125oC, -

TPHL1
TPLH1

TPHL2
TPLH2

TPHL3
TPLH3

TTLH

FCL VDD = 5V, VIN = VDD or GND 9 +25oC 2.5 - MHz

VDD = 5V, VIN = VDD or GND 9 +25oC - 650 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 600 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 530 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

SUBGROUPS TEMPERATURE

10, 11 +125oC, -55oC - 878 ns

10, 11 +125oC, -55oC - 810 ns

10, 11 +125oC, -55oC - 716 ns

10, 11 +125oC, -55oC - 270 ns

10, 11 +125oC, -55oC 1.85 - MHz

+125oC - 150 µA

+125oC - 300 µA

+125oC - 600 µA

55oC

55oC

55oC

55oC

-55oC 0.64 - mA

-55oC 1.6 - mA

-55oC 4.2 - mA

-55oC - -0.64 mA

-55oC - -2.0 mA

-55oC - -1.6 mA

-55oC - -4.2 mA

55oC

55oC

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

-50mV

-50mV

4.95 - V

9.95 - V

-3V

7-V

3