CD40208BMS
December 1992
Features
• High Voltage Types (20V Rating)
• One Input and Two Output Buses
• Unlimited Expansion in Bit and Word Directions
• Data Lines have Latched Inputs
• 3-State Outputs
• Separate Control of Each Bus, Allowing Simultaneous
Independent Reading of any of Four Registers on Bus
A and Bus B and Independent Writing Into any of the
Four Registers
• 100% Tested for Quiescent Current at 20V
• Standardized, Symmetrical Output Characteristics
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µ A at 18V Over Full Package-Temperature Range; 100nA at 18V and +25
• Noise Margin (Full Package-Temperature Range):
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Meets All Requirements of JEDEC Tentative Standards No. 13B, “Standard Specifications for Description of “B” Series CMOS Devices”
Applications
• Scratch Pad Memories
• Arithmetic Units
• Data Storage
CMOS 4 x 4 Multiport Register
Description
The CD40208BMS is a 4 x 4 multiport register containing
four 4-bit registers, write address decoder, two separate
read address decoders, and two 3-state output buses.
When the ENABLE input is low, the corresponding output
bus is switched, independently of the clock, to a high impedance state. The high impedance third state provides the outputs with the capability of being connected to the bus lines in
a bus organized system without the need for interface or
pull-up components.
When the WRITE ENABLE input is high, all data input lines
are latched on the positive transition of the CLOCK and the
data is entered into the word selected by the write address
lines. When WRITE ENABLE is low, the CLOCK is inhibited
o
C
and no new data is entered. In either case, the contents of
any word may be accessed via the read address lines independent of the state of the CLOCK input.
The CD40208BMS types are supplied in hermetic 24-lead
dual-in-line ceramic packages (D and F suffixes), 24-lead
dual-in-line plastic packages (E suffix), 24-lead ceramic flat
packages (K suffix), and in chip form (H suffix).
The CD40208BMS is supplied in these 24-lead outline packages:
Braze Seal DIP HNZ
Ceramic Flatpack H4P
Pinout
CD40208BMS
TOP VIEW
1
Q3B
2
Q2B
Q0A
Q1A
Q2A
Q3A
VSS
3
4
5
6
7
8
9
10
11
12
ENABLE A
WRITE 0
WRITE 1
READ 0B
READ 1B
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
24
VDD
Q1B
23
Q0B
22
ENABLE B
21
D0
20
D1
19
D2
18
D3
17
CLOCK
16
15
WRITE ENABLE
14
READ 1A
13
READ 0A
Functional Diagram
DATA
INPUTS
= 24
V
DD
= 12
V
SS
7-1431
D0
D1
D2
D3
WRITE 0
WRITE 1
READ 1A
READ 0A
READ 1B
READ 0B
WRITE
ENABLE
20
19
18
17
8
9
14
13
11
10
16 21
CLOCK
ENABLE A
15
3
4
5
6
7
22
23
2
1
ENABLE B
Q0
Q1
WORD A
OUTPUT
Q2
Q3
Q0
Q1
WORD B
OUTPUT
Q2
Q3
File Number
3396
Specifications CD40208BMS
Absolute Maximum Ratings Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .± 10mA
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1)
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC- 1 0µA
VDD = 18V, VIN = VDD or GND 3 -55oC- 1 0µA
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µ A 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µ A 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >
VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Tri-State Output
Leakage
Tri-State Output
Leakage
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/NoGo test with limits applied to inputs.
VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V
VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V
VIL VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VIH VDD = 15V, VOH > 13.5V,
VOL < 1.5V
IOZL VIN = VDD or GND
VOUT = 0V
IOZH VIN = VDD or GND
VOUT = VDD
VDD = 20V 1 +25oC -0.4 - µ A
VDD = 18V 3 -55oC -0.4 - µ A
VDD = 20V 1 +25oC - 0.4 µ A
VDD = 18V 3 -55oC - 0.4 µ A
Thermal Resistance θ
Ceramic DIP and Frit Package . . . . . . 80oC/W 20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K). . . . . .Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
GROUP A
SUBGROUPS TEMPERATURE
2 +125oC - 1000 µ A
2 +125oC -1000 - nA
2 +125oC - 1000 nA
1, 2, 3 +25oC, +125oC, -55oC- 4 V
1, 2, 3 +25oC, +125oC, -55oC1 1 - V
2 +125oC -12 - µ A
2 +125oC- 1 2µA
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
ja
LIMITS
VDD/2
VOL <
VDD/2
θ
jc
UNITS MIN MAX
V
7-1432
Specifications CD40208BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1)
Propagation Delay
Clock or Write Enable to Q
Propagation Delay
Read or Write Enable to Q
Propagation Delay
3-State Disable Delay Time
Propagation Delay
3-State Disable Delay Time
Transition Time TTHL
Maximum Clock Input
Frequency
NOTES:
1. VDD = 5V, CL = 50pF, RL = 200K
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
TPHL1
TPLH1
TPHL2
TPLH2
TPZH, HZ VDD = 5V, VIN = VDD or GND
TPZL, LZ VDD = 5V, VIN = VDD or GND
TTLH
FCL VDD = 5V, VIN = VDD or GND 9 +25oC 1.5 - MHz
VDD = 5V, VIN = VDD or GND
(Notes 1, 2)
VDD = 5V, VIN = VDD or GND
(Notes 1, 2)
(Notes 2, 3)
(Notes 2, 3)
VDD = 5V, VIN = VDD or GND
(Notes 1, 2)
GROUP A
SUBGROUPS TEMPERATURE
9 +25oC - 720 ns
10, 11 +125oC, -55oC - 972 ns
9 +25oC - 600 ns
10, 11 +125oC, -55oC - 810 ns
9 +25oC - 200 ns
10, 11 +125oC, -55oC - 270 ns
9 +25oC - 260 ns
10, 11 +125oC, -55oC - 351 ns
9 +25oC - 200 ns
10, 11 +125oC, -55oC - 270 ns
10, 11 +125oC, -55oC 1.11 - MHz
LIMITS
UNITS MIN MAX
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERA TURE
Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 5 µA
+125oC - 150 µ A
VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 1 0µA
+125oC - 300 µ A
VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 1 0µA
+125oC - 600 µ A
Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,
-55oC
Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,
-55oC
Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,
-55oC
Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,
-55oC
Output Current (Sink) IOL4 VDD = 4.5V, VOUT = 0.4V 1, 2 +125oC--m A
-55oC-- m A
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA
-55oC 0.64 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA
-55oC 1.6 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA
-55oC 4.2 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA
-55oC - -0.64 mA
-5 0m V
-5 0m V
4.95 - V
9.95 - V
UNITS MIN MAX
7-1433
Specifications CD40208BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERA TURE
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA
-55oC - -2.0 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA
-55oC - -1.6 mA
Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA
-55oC - -4.2 mA
Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC,
-55oC
Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC,
-55oC
Propagation Delay
Clock or Write Enable to Q
Propagation Delay
Read or Write Address to Q
Propagation Delay
Output Disable to Output
Propagation Delay
Output Disable to Output
Minimum Write Enable to
Clock Setup Time
Minimum Data to Clock
Setup Time
Minimum Write Address
to Clock Setup Time
Minimum Write Enable to
Clock Hold Time
Minimum Data to Clock
Hold Time
Minimum Write Address
to Clock Hold Time
Minimum Clock Pulse
Width, Clock or Write Enable
Minimum Clock Pulse
Width, Write Address
TPHL1
TPLH1
TPHL2
TPLH2
TPZL, LZ VDD = 10V 1, 2, 4 +25oC - 120 ns
TPZH, HZ VDD = 10V 1, 2, 4 +25oC - 100 ns
TS (WE) VDD = 5V 1, 2, 3 +25oC - 250 ns
TS (D) VDD = 5V 1, 2, 3 +25oC-0n s
TS (WA) VDD = 5V 1, 2, 3 +25oC - 250 ns
TH (WE) VDD = 5V 1, 2, 3 +25oC - 270 ns
TH (D) VDD = 5V 1, 2, 3 +25oC - 220 ns
TH (WA) VDD = 5V 1, 2, 3 +25oC - 330 ns
TW (CL) VDD = 5V 1, 2, 3 +25oC - 350 ns
TW (WA) VDD = 5V 1, 2, 3 +25oC - 300 ns
VDD = 10V 1, 2, 3 +25oC - 280 ns
VDD = 15V 1, 2, 3 +25oC - 200 ns
VDD = 10V 1, 2, 3 +25oC - 240 ns
VDD = 15V 1, 2, 3 +25oC - 170 ns
VDD = 15V 1, 2, 4 +25oC - 100 ns
VDD = 15V 1, 2, 4 +25oC - 80 ns
VDD = 10V 1, 2, 3 +25oC - 100 ns
VDD = 15V 1, 2, 3 +25oC - 70 ns
VDD = 10V 1, 2, 3 +25oC-0n s
VDD = 15V 1, 2, 3 +25oC-0n s
VDD = 10V 1, 2, 3 +25oC - 100 ns
VDD = 15V 1, 2, 3 +25oC - 70 ns
VDD = 10V 1, 2, 3 +25oC - 130 ns
VDD = 15V 1, 2, 3 +25oC - 80 ns
VDD = 10V 1, 2, 3 +25oC - 100 ns
VDD = 15V 1, 2, 3 +25oC - 80 ns
VDD = 10V 1, 2, 3 +25oC - 140 ns
VDD = 15V 1, 2, 3 +25oC - 90 ns
VDD = 10V 1, 2, 3 +25oC - 130 ns
VDD = 15V 1, 2, 3 +25oC - 90 ns
VDD = 10V 1, 2, 3 +25oC - 150 ns
VDD = 15V 1, 2, 3 +25oC - 90 ns
-3V
+7 - V
UNITS MIN MAX
7-1434