Intersil Corporation CD4016BMS Datasheet

CD4016BMS

November 1994

Features

• Transmission or Multiplexing of Analog or Digital Signals

• High Voltage Type (20V Rating)

• 20V Digital or ±10V Peak-to-Peak Switching

• 280Ω Typical On-State Resistance for 15V Operation

• Switch On-State Resistance Matched to Within 10Ω

Typ. Over 15V Signal Input Range

• High On/Off Output Voltage Ratio: 65dB Typ. at FIS =

10kHz, RL = 10kΩ

• High Degree of Linearity: <0.5% Distortion Typ. at FIS

= 1kHz, VIS = 5Vp-p, VDD-VSS ≥ 10V, RL = 10kΩ

• Extremely Low Off State Switch Leakage Resulting in
Very Low Offset Current and High Effective Off State
Resistance: 100pA Typ. at VDD-VSS = 18V, T

• Extremely High Control Input Impedance (Control cir­cuit Isolated from Signal Circuit: 10

12

Ω Typ.

• Low Crosstalk Between Switches: -50dB Typ. at FIS =

0.9MHz, RL = 1kΩ

• Matched Control Input to Signal Output
Capacitance: Reduces Output Signal Transients

• Frequency Response, Switch On = 40MHz (Typ.)

• 100% Tested for Quiescent Current at 20V

• Maximum Control Input Current of 1µA at 18V Over Full
Package Temperature Range; 100nA at 18V at +25

• 5V, 10V and 15V Parametric Ratings

= 25oC

A

CMOS Quad Bilateral Switch

Applications

• Analog Signal Switching/Multiplexing

• Signal Gating

• Squelch Control

• Chopper

• Modulator

• Demodulator

• Commutating Switch

• Digital Signal Switching/Multiplexing

• CMOS Logic Implementation

• Analog to Digital & Digital to Analog Conversion

• Digital Control of Frequency, Impedance, Phase, and
Analog Signal Gain

Description

CD4016BMS Series types are quad bilateral switches intended
for the transmission or multiplexing of analog or digital signals.
Each of the four independent bilateral switches has a single con­trol signal input which simultaneously biases both the p and n
device in a given switch on or off.

The CD4016BMS is supplied in these 14 lead outline packages:
Braze Seal DIP H4Q

o

C

Frit Seal DIP H1B
Ceramic Flatpack H3W

Pinout

CD4016BMS

TOP VIEW

SIG A IN

SIG A OUT

SIG B IN

SIG B OUT

CONTROL B

CONTROL C

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

VSS

1

2

3

4

5

6

7

VDD

14

CONTROL A

13

CONTROL D

12

SIG D IN

11

SIG D OUT

10

SIG C OUT

9

SIG C IN

8

Functional Diagram

IN/OUT

SIG A

OUT/IN

OUT/IN

SIG B

IN/OUT

CONTROL B

CONTROL C

VSS

7-733

1

2

3

4

5

6

7

SW

A

SW

D

SW

B

SW

C

14

VDD

13

CONTROL A

12

CONTROL D

11

IN/OUT
SIG D

10

OUT/IN

9

OUT/IN
SIG C

8

IN/OUT

File Number

3296

Specifications CD4016BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range. . . . . . . . . . . . . . . . -55

Package Types D, F, K, H

Storage Temperature Range (TSTG). . . . . . . . . . . -65

o

C to +125oC

o

C to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25

VDD = 18V, VIN = VDD or GND 3 -55oC - 0.5 µA

Input Leakage Current IIL VC = VDD or GND VDD = 20 1 +25

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VC = VDD or GND VDD = 20 1 +25oC - 100 nA

VDD = 18V 3 -55oC - 100 nA

Input/Output Leakage
Current (Switch Off)

Input/Output Leakage

IOZL VDD = 18V, VC = 0V, VIS = 18V,

VOS = 0V

IOZH VDD = 18V, VIS = 18V, VOS = 0V 1 +25oC - 100 nA

Current (Switch Off)

N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
On-State Resistance

RON10 VIS = VDD or VSS, VDD = 10V 1 +25oC - 660 Ω
RL = 10K Returned to
VDD-VSS/2

RON10 VIS = 4.75V or 5.75V, VDD = 10V 1 +25oC - 2000 Ω

RON15 VIS = VDD or VSS, VDD = 15V 1 +25oC - 400 Ω

RON15 VIS = 7.25 or 7.75, VDD = 15V 1 +25oC - 850 Ω

Functional
(Note 3)

F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC

Switch Threshold
RL = 100K to VDD

SWTHRH5 VDD = 5V, VC = 1.5V, VIS = GND 1, 2, 3 +25oC, +125oC, -55oC 4.1 - V

SWTHRH15 VDD = 15V, VC = 2V, VIS = GND 1, 2, 3 +25oC, +125oC, -55oC 14.1 - V

Thermal Resistance . . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W

Flatpack Package . . . . . . . . . . . . . . . . 70

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55
For TA = +100

o

C

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

o

C to +100oC (Package Type D, F, K). . . . . .500mW

o

C to +125oC (Package Type D, F, K) . . . . .Derate

Linearity at 12mW/oC to 200mW

ja

o

C/W 20oC/W

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

GROUP A

LIMITS

SUBGROUPS TEMPERATURE

o

C - 0.5 µA

2 +125

2 +125

o

C-50µA

o

C -100 - nA

o

C -1000 - nA

2 +125oC - 1000 nA

1 +25oC -100 - nA
2 +125oC -1000 - nA
3 -55oC -100 - nA

2 +125oC - 1000 nA
3 -55oC - 100 nA

2 +125oC - 960 Ω
3 -55oC - 600 Ω

2 +125oC - 2600 Ω
3 -55oC - 1870 Ω

2 +125oC - 600 Ω
3 -55oC - 360 Ω

2 +125oC - 1230 Ω
3 -55oC - 775 Ω

VOL <

VDD/2

VDD/2

θ

jc

UNITSMIN MAX

V

7-734

Specifications CD4016BMS

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

GROUP A

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Input Voltage Control,
Low (Note 2)

Control Input High
Voltage
(Note 2, Figure 12)
VIS = VSS, and
VIS = VDD

NOTES: 1. All voltages referenced to device GND, 100% testing being implemented.

2. Go/No Go test with limits applied to inputs

3. VDD = 2.8V/3V, RL = 100K to VDD
VDD = 20V/18V, RL = 10K to VDD

VILC VDD = 5V, VOS = VDD, VIS = VSS,

and VDD = 5V, VOS = VSS, VIS =
VDD, |IIS| < 10µA

VIHC VDD = 5V, |IIS| = .16mA, 4.6V <

VOS < 0.4V
VDD = 5V, |IIS| = .14mA, 4.6V <

VOS < 0.4V
VDD = 5V, |IIS| = .25mA, 4.6V <

VOS < 0.4V

VIHC VDD = 15V, |IIS| = 1.2mA, 13.5V <

VOS < 1.5V
VDD = 15V, |IIS| = 1.1mA, 13.5V <

VOS < 1.5V
VDD = 15V, |IIS| = 1.8mA, 13.5V <

VOS < 1.5V

SUBGROUPS TEMPERATURE

1 +25oC - 0.7 V
2 +125oC - 0.4 V
3 -55oC - 0.9 V
1 +25oC 3.5 - V

2 +125oC 3.5 - V

3 -55oC 3.5 - V

1 +25oC11-V

2 +125oC11-V

3 -55oC11-V

LIMITS

UNITSMIN MAX

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP A

PARAMETER SYMBOL CONDITIONS

Propagation Delay
Signal Input to Signal
Output

Propagation Delay
Turn On

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

3. CL = 50pF, RL = 1K, TR, TF < 20ns.

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.25 µA

Input Voltage Control,
Low

TPHL
TPLH

TPZH
TPZL

VILC VDD = 10V, VOS = VDD, VIS =

VDD = 5V, VIN = VDD or GND
(Notes 1, 2)

VDD = 5V, VIN = VDD or GND
(Notes 2, 3)

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.5 µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.5 µA

VSSand VOS = VSS, VIS = VDD
|IIS| < 10µA

SUBGROUPS TEMPERATURE

9 +25oC - 100 ns

10, 11 +125oC, -55oC - 135 ns

9 +25oC - 70 ns

10, 11 +125oC, -55oC - 95 ns

+125oC - 7.5 µA

+125oC-15µA

+125oC-30µA

1, 2 +25oC-55oC - 0.7 V

+125oC - 0.4 V

-55oC - 0.9 V

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

7-735