Intersil Corporation CD4010BMS Datasheet

CD4010BMS

November 1994 File Number 3078

CMOS Hex Buffer/Converter

CD4010BMS Hex Buffer/Converter may be used as CMOS to TTL or DTL logic-level converter or CMOS high-sink-current driver.

The CD4050B is thepreferred hex buffer replacement for the CD4010BMS in all applications except multiplexers.The CD4010BMS is supplied in these 16 lead outline packages:

Braze Seal DIP H4S Frit Seal DIP H1E Ceramic Flatpack H6W

Pinout

CD4010BMS

TOP VIEW

VCC

G = A

H = B

I = C

VSS

NC = NO CONNECTION

1 2 3 4 5 6 7 8

VDD

L = F

K = E

J = D

Features

• Non-Inverting Type

• High-Voltage Type (20V Rating)

• 100% Tested for Quiescent Current at 20V

• Maximum Input Current of 1µA at 18V Over Full

Package-Temperature Range;

- 100nA at 18V and +25

• 5V, 10V and 15V Parametric Ratings

Applications

• CMOS To DTL/TTL Hex Converter

• CMOS Current “Sink” or “Source” Driver

• CMOS High-to-Low Logic-Level Converter

• Multiplexer - 1 to 6 or 6 to 1

Functional Diagram

VCC

VSS

VDD

910

11 12

14 15

G = A

H = B

I = C

J = D

K = E

L = F

4-1

NC = NO CONNECTION

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

CD4010BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . .-0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V

DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC

Package Types D, F, K, H

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-2µA

VDD = 18V, VIN = VDD or GND 3 -55oC-2µA

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

VDD = 18V 3 -55oC - 100 nA Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 3.0 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 8.0 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 24.0 - mA Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.2 mA Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -0.8 mA Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -0.45 mA Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -1.5 mA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH>

VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low (Note 2)

Input Voltage High (Note 2)

Input Voltage Low (Note 2)

Input Voltage High (Note 2)

NOTES: 1. All voltages referenced to device GND, 100% testing being im-

plemented.

2. Go/No Go test with limits applied to inputs

VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 1.5 V

VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 V

VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V

VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V

Thermal Resistance. . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W

Flatpack Package. . . . . . . . . . . . . . . . 70oC/W 20oC/W

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW

For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate

Linearity at 12mW/oC to 200mW

Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC

GROUP A

SUBGROUPS TEMPERATURE

2 +125oC - 200 µA

2 +125oC -1000 - nA

2 +125oC - 1000 nA

1, 2, 3 +25oC, +125oC, -55oC4V

1, 2, 3 +25oC, +125oC, -55oC11 V

3. Foraccuracy, voltageismeasured differentiallytoVDD. Limitis

0.050V max.

LIMITS

VDD/2

VOL < VDD/2

UNITSMIN MAX

4-2

CD4010BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP A

PARAMETER SYMBOL CONDITIONS (NOTE 1, 2)

Propagation Delay TPHL VDD = 5V, VIN = VDD or GND 9 +25oC - 130 ns

Propagation Delay TPLH VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns

Transition Time TTHL VDD = 5V, VIN = VDD or GND 9 +25oC - 70 ns

Transition Time TTLH VDD = 5V, VIN = VDD or GND 9 +25oC - 350 ns

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 1 µA

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, -

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -

Output Current (Sink) IOL4 VDD = 4.5V, VOUT = 0.4V 1, 2 +25oC 2.6 - mA

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 2.1 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 5.6 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 16.0 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.15 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -0.58 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.33 mA

Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -1.1 mA

SUBGROUPS TEMPERATURE

10, 11 +125oC, -55oC - 175 ns

10, 11 +125oC, -55oC - 270 ns

10, 11 +125oC, -55oC - 94 ns

10, 11 +125oC, -55oC - 473 ns

+125oC-30µA

+125oC-60µA

+125oC - 120 µA

55oC

+125oC 1.8 - mA

-55oC 3.2 - mA

-55oC 3.75 - mA

-55oC 10.0 - mA

-55oC 30.0 - mA

-55oC - -0.25 mA

-55oC - -1.0 mA

-55oC - -0.55 mA

-55oC - -1.65 mA

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

-50mV

4.95 - V

9.95 - V

4-3

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