Intersil Corporation CD40108BMS Datasheet

CD40108BMS

December 1992

Features

• High Voltage Type (20V Rating)

• Four 4-Bit Registers

• One Input and Two Output Buses

• Unlimited Expansion in Bit and Word Directions

• Data Lines have latched Inputs

• 3-State Outputs

• Separate Control of Each Bus, Allowing Simultaneous
Independent Reading of Any of Four Registers on Bus
A and Bus B and Independent Writing Into Any of the
Four Registers

• CD40108BMS is Pin-Compatible with Industry Type
MC14580

• Standardized Symmetrical Output Characteristics

• 100% Tested for Quiescent Current at 20V

• Maximum Input Current of 1µA at 18V Over Full Pack­age Temperature Range; 100nA at 18V and +25oC

• Noise Margin (Over Full Package/Temperature Range)

- 1V at VDD = 5V

- 2V at VDD = 10V

- 2.5V at VDD = 15V

• 5V, 10V and 15V Parametric Ratings

• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”

CMOS 4 x 4 Multiport Register

Description

The CD40108BMS is a 4 x 4 multiport register containing
four 4-bit registers, write address decoder, two separate
read address decoders, and two 3-state output buses.

When the ENABLE input is low, the corresponding output
bus is switched, independently of the clock, to a high-imped­ance state. The high-impedance third state provides the out­puts with the capability of being connected to the bus lines in
a bus-organized system without the need for interface or
pull-up components.

When the WRITE ENABLE input is high, all data input lines
are latched on the positive transition of the CLOCK and the
data is entered into the word selected by the write address
lines. When WRITE ENABLE is low, the CLOCK is inhibited
and no new data is entered. In either case, the contents of
any word may be accessed via the read address lines inde­pendent of the state of the CLOCK input.

The CD40108BMS is supplied in these 24-lead outline pack­ages:

Braze Seal DIP H4V
Ceramic Flatpack H4P

Applications

• Scratch-Pad Memories

• Arithmetic Units

• Data Storage

Pinout

CD40108BMS

TOP VIEW

1

Q3 B

2

Q2 B

Q0 A
Q1 A
Q2 A
Q3 A

VSS

3
4
5
6
7
8

9
10
11
12

3-STATE A

WRITE 0

WRITE 1
READ 1B
READ 0B

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

24

VDD
Q1 B

23

Q0 B

22

3-STATE B

21

D0

20

D1

19

D2

18

D3

17

CLOCK

16

WRITE ENABLE

15

READ 1A

14

READ 0A

13

Functional Diagram

DATA

INPUTS

READ 1A
READ 0A

READ 1B
READ 0B

VDD = 24
VSS = 12

7-25

D0
D1
D2
D3

WRITE 0
WRITE 1

WRITE

ENABLE

20
19
18
17

8
9

14
13

10
11

CLOCK

3-STATE A

315

2116

3-STATE B

4

Q0

5

Q1

6

Q2

7

Q3

22

Q0

23

Q1

2

Q2

1

Q3

File Number

WORD A
OUTPUT

WORD B
OUTPUT

3356

Specifications CD40108BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

Package Types D, F, K, H

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-10µA

VDD = 18V, VIN = VDD or GND 3 -55oC-10µA

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low
(Note 2)

Input Voltage High
(Note 2)

Input Voltage Low
(Note 2)

Input Voltage High
(Note 2)

Tri-State Output
Leakage

Tri-State Output
Leakage

NOTES: 1. All voltages referenced to device GND, 100% testing being

implemented.

2. Go/No Go test with limits applied to inputs.

VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V

VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V

VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V

VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V

IOZL VIN = VDD or GND

VOUT = 0V

IOZH VIN = VDD or GND

VOUT = VDD

VDD = 20V 1 +25oC -0.4 - µA

VDD = 18V 3 -55oC -0.4 - µA

VDD = 20V 1 +25oC - 0.4 µA

VDD = 18V 3 -55oC - 0.4 µA

Thermal Resistance . . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W

Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW

For TA = +100oC to +125oC (Package Type D, F, K). . . . . .Derate

Linearity at 12mW/oC to 200mW

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

GROUP A

SUBGROUPS TEMPERATURE

2 +125oC - 1000 µA

2 +125oC -1000 - nA

2 +125oC - 1000 nA

1, 2, 3 +25oC, +125oC, -55oC- 4 V

1, 2, 3 +25oC, +125oC, -55oC11 - V

2 +125oC -12 - µA

2 +125oC-12µA

3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.

ja

LIMITS

VDD/2

VOL <
VDD/2

θ

jc

UNITSMIN MAX

V

7-26

Specifications CD40108BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS

Propagation Delay Clock
or Write Enable to Q

Propagation Delay Read
or Write Address to Q

Propagation Delay 3­State Disable Delay Time

Propagation Delay 3­State Disable Delay Time

Transition Time TTHL

Maximum Clock Input
Frequency

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

TPHL1
TPLH1

TPHL2
TPLH2

TPZH
TPHZ

TPZL
TPLZ

TTLH

FCL VDD = 5V, VIN = VDD or GND

VDD = 5V, VIN = VDD or GND
(Note 1, 2)

VDD = 5V, VIN = VDD or GND
(Note 1, 2)

VDD = 5V, VIN = VDD or GND
(Note 2, 3)

VDD = 5V, VIN = VDD or GND
(Note 2, 3)

VDD = 5V, VIN = VDD or GND
(Note 1, 2)

(Note 1, 2)

GROUP A

SUBGROUPS TEMPERATURE

9 +25oC - 720 ns

10, 11 +125oC, -55oC - 972 ns

9 +25oC - 600 ns

10, 11 +125oC, -55oC - 810 ns

9 +25oC - 200 ns

10, 11 +125oC, -55oC - 270 ns

9 +25oC - 260 ns

10, 11 +125oC, -55oC - 351 ns

9 +25oC - 200 ns

10, 11 +125oC, -55oC - 270 ns

9 +25oC 1.5 - MHz

10, 11 +125oC, -55oC 1.11 - MHz

LIMITS

UNITSMIN MAX

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 5 µA

+125oC - 150 µA

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

+125oC - 300 µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

+125oC - 600 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,

-55oC

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,

-55oC

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,

-55oC

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,

-55oC

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA

-55oC 0.64 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA

-55oC 1.6 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA

-55oC 4.2 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA

-55oC - -0.64 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA

-55oC - -2.0 mA

-50mV

-50mV

4.95 - V

9.95 - V

UNITSMIN MAX

7-27

Specifications CD40108BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA

-55oC - -1.6 mA

Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA

o

C - -4.2 mA

-55

Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25

o

C, +125oC,

-3V

-55oC

Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC,

7-V

-55oC

Propagation Delay
Clock or Write Enable to Q

Propagation Delay
Read or Write Address to Q

Propagation Delay
3-State Disable Delay
Time

Propagation Delay
3-State Disable Delay
Time

Transition Time TTLH

Maximum Clock Input
Frequency

Minimum Data Setup
Time
Data to Clock

TPLH1
TPHL1

TPHL2
TPLH2

TPZH
TPHZ

TPZL
TPLZ

VDD = 10V 1, 2, 3 +25oC - 280 ns
VDD = 15V 1, 2, 3 +25oC - 200 ns

o

VDD = 10V 1, 2, 3 +25
VDD = 15V 1, 2, 3 +25

C - 240 ns

o

C - 170 ns
VDD = 10V 1, 2, 4 +25oC - 100 ns
VDD = 15V 1, 2, 4 +25oC - 80 ns

VDD = 10V 1, 2, 4 +25oC - 120 ns
VDD = 15V 1, 2, 4 +25oC - 100 ns

VDD = 10V 1, 2, 3 +25oC - 100 ns

TTHL

VDD = 15V 1, 2, 3 +25oC - 80 ns

FCL VDD = 10V 1, 2, 3 +25oC 3.5 - MHz

VDD = 15V 1, 2, 3 +25oC 4.5 - MHz

TS VDD = 5V 1, 2, 3 +25oC0 ns

VDD = 10V 1, 2, 3 +25oC0 ns
VDD = 15V 1, 2, 3 +25oC0 ns

Minimum Data Setup
Time
Write Enable to Clock

TS VDD = 5V 1, 2, 3 +25oC 250 ns

VDD = 10V 1, 2, 3 +25oC 100 ns
VDD = 15V 1, 2, 3 +25oC70 ns

Minimum Data Setup
Time
Write Address to Clock

TS VDD = 5V 1, 2, 3 +25oC 250 ns

VDD = 10V 1, 2, 3 +25oC 100 ns
VDD = 15V 1, 2, 3 +25oC70 ns

Clock Rise and Fall Time TRCL

TFCL

VDD = 5V 1, 2, 3, 5 +25oC - 15 ns
VDD = 10V 1, 2, 3, 5 +25oC-5ns
VDD = 15V 1, 2, 3, 5 +25oC-5ns

Minimum Hold Time Data
to Clock

TH VDD = 5V 2, 3 +25oC 220 ns

VDD = 10V 2, 3 +25oC 100 ns
VDD = 15V 2, 3 +25oC80 ns

Hold Time Write Enable
to Clock

TH VDD = 5V 2, 3 +25oC - 270 ns

VDD = 10V 2, 3 +25oC - 130 ns
VDD = 15V 2, 3 +25oC - 80 ns

Write Address to Clock TH VDD = 5V 2, 3 +25oC - 330 ns

VDD = 10V 2, 3 +25oC - 140 ns
VDD = 15V 2, 3 +25oC - 90 ns

UNITSMIN MAX

7-28