Intersil Corporation CD40107BMS Datasheet

CD40107BMS

December 1992

Features

• High Voltage Type (20V Rating)

• 32 Times Standard B Series Output Current Drive
Sinking Capability

- 136mA Typ. at VDD = 10V

- VDS = 1V

• 100% Tested for Quiescent Current at 20V

• 5V, 10V and 15V Parametric Ratings

• Maximum Input Current of 1µA at 18V Over Full Pack­age Temperature Range; 100nA at 18V and +25

• Noise Margin (Over Full Package/Temperature Range)
RL to VDD = 10kΩ

- 1V at VDD = 5V

- 2V at VDD = 10V

- 2.5V at VDD = 15V

• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”

CMOS Dual 2 Input NAND Buffer/Driver

Pinouts

CD40107BF

TOP VIEW

NC

1
2

NC

3

A

4

B

A • B

o

C

C =

5
6

NC

VSS

7

NC = NO CONNECTION

Functional Diagram

VDD

14
13

NC

12

NC

11

D

10

E

D • E

9

F =

8

NC

Applications

• Driving Relays, Lamps, LEDs

• Line Driver

• Level Shifter (Up or Down)

Description

CD40107BMS is a dual 2 input NAND buffer/driver contain­ing two independent 2 input NAND buffers with open drain
single n-channel transistor outputs. This device features a
wired OR capability and high output sink current capability
(136mA typ. at VDD = 10V, VDS = 1V).

The CD40107BMS is supplied in these 14 lead outline
packages:

Braze Seal DIP H4H
Frit Seal DIP H1B
Ceramic Flatpack H3W

C = A • B

A
B

VSS

F = D • E

D
E

VSS

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

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File Number

3355

Specifications CD40107BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

Package Types D, F, K, H

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25

VDD = 18V, VIN = VDD or GND 3 -55oC-2µA

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

VDD = 18V 3 -55oC - 100 nA
Output Drive Voltage VOL5A VDD = 5V, IOL = 16mA 1 +25oC - 0.4 V
Output Drive Voltage VOL5B VDD = 5V, IOL = 34mA 1 +25oC - 1.0 V

VOL10A VDD = 10V, IOL = 37mA 1 +25oC - 0.5 V

Output Drive Voltage VOL10B VDD = 10V, IOL = 68mA 1 +25oC - 1.0 V

VOL15 VDD = 15V, IOL = 50mA 1 +25oC - 0.5 V
Output Current (Source) IOH5A
Output Current (Source) IOH5B
Output Current (Source) IOH10
Output Current (Source) IOH15
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional (Note 3) F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low
(Note 2, 3)

Input Voltage High
(Note 2, 3)

Input Voltage Low
(Note 2, 3)

Input Voltage High
(Note 2, 3)

Tri-State Output
Leakage High

NOTES: 1. All voltages referenced to device GND, 100% testing being

implemented.

2. Go/No Go test with limits applied to inputs.

VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V

VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V

VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V

VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V

IOZ VIN = VDD or GND

VOUT = VDD

VDD = 20V 1 +25oC-2µA

VDD = 18V 3 -55oC-2µA

Thermal Resistance . . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W

Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW

For TA = +100oC to +125oC (Package Type D, F, K). . . . . .Derate

Linearity at 12mW/oC to 200mW

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC

GROUP A

SUBGROUPS TEMPERATURE

o

C-2µA

2 +125oC - 200 µA

2 +125oC -1000 - nA

2 +125oC - 1000 nA

No Internal Pull-Up Device

1, 2, 3 +25oC, +125oC, -55oC- 4 V

1, 2, 3 +25oC, +125oC, -55oC11 - V

2 +125oC-20µA

3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.

ja

LIMITS

VDD/2

VOL <
VDD/2

θ

jc

UNITSMIN MAX

V

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Specifications CD40107BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1, 2)

GROUP A

SUBGROUPS TEMPERATURE

LIMITS

UNITSMIN MAX

Propagation Delay TPHL

TPLH

Transition Time TTHL

TTLH

NOTES:

1. CL = 50pF, RL = 120Ω, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 1 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Voltage (Note 5) VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage (Note 5) VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Current (Sink) IOL5A VDD = 5.0V, VOUT = 0.4V 1, 2 +125oC12-mA

Output Current (Sink) IOL5B VDD = 5V, VOUT = 1.0V 1, 2, 4 +125oC25-mA

Output Current (Sink) IOL10A VDD = 10V, VOUT = 0.5V 1, 2, 4 +125oC28-mA

Output Current (Sink) IOL10B VDD = 10V, VOUT = 1V 1, 2, 4 +125oC51-mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 0.5V 1, 2 +125oC38-mA

Input Voltage Low VIL VDD = 10V , VOH > 9V, VOL < 1V 1, 2, 4 +25oC, +125oC,

Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2, 4 +25oC, +125oC,

VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns

10, 11 +125oC, -55oC - 270 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 100 ns

10, 11 +125oC, -55oC - 135 ns

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS

UNITSMIN MAX

+125oC-30µA

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA

+125oC-60µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA

+125oC - 120 µA

-50mV

-55oC

-50mV

-55oC

4.95 - V

-55oC

9.95 - V

-55oC

-55oC21-mA

-55oC44-mA

-55oC49-mA

-55oC89-mA

-55oC66-mA

-3V

-55oC
+7 - V

-55oC

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