Intersil Corporation CD40105BMS Datasheet
CD40105BMS
December 1992
Features
• 4 Bits x 16 Words
• High Voltage Type (20V Rating)
• Independent Asynchronous Inputs and Outputs
• 3-State Outputs
• Expandable in Either Direction
• Status Indicators on Input and Output
• Reset Capability
• Standardized Symmetrical Output Characteristics
• 100% Tested for Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
• Noise Margin (Over Full Package/Temperature Range)
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
Applications
• Bit Rate Smoothing
• CPU/Terminal Buffering
• Data Communications
• Peripheral Buffering
• Line Printer Input Buffers
• Auto Dialers
• CRT Buffer Memories
• Radar Data Acquisition
CMOS FIFO Register
Description
CD40105BMS is a low-power first-in-first-out (FIFO) “elastic”
storage register that can store 16 4-bit words. It is capable of
handling input and output data at different shifting rates. This
feature makes it particularly useful as a buffer between asynchronous systems.
Each word position in the register is clocked by a control flipflop, which stores a marker bit. A “1” signifies that the position’s data is filled and a “0” denotes a vacancy in that position. The control flip-flop detects the state of the preceding
flip-flop and communicates its own status to the succeeding
flip-flop. When a control flip-flop is in the “0” state and sees a
“1” in the preceding flip-flop, it generates a clock pulse that
transfers data from the preceding four data latches into its
o
C
own four data latches and resets the preceding flip-flop to
“0”. The first and last control flip-flops have buffered outputs.
Since all empty locations “bubble” automatically to the input
end, and all valid data ripple through to the output end, the
status of the first control flip-flop (DATA-IN READY) indicates
if the FIFO is full, and the status of the last flip-flop (DATAOUT READY) indicates if the FIFO contains data. As the
earliest data are removed from the bottom of the data stack
(the output end), all data entered later will automatically
propagate (ripple) toward the output.
Loading Data - Data can be entered whenever the DATA-IN
READY (DIR) flag is high, by a low to high transition on the
SHIFT-IN (SI) input. This input must go low momentarily
before the next word is accepted by the FIFO. The DIR flag
will go low momentarily, until that data have been transferred
to the second location. The flag will remain low when all 16word locations are filled with valid data, and further pulses
on the SI input will be ignored until DIR goes high.
Continued on next page
Pinout
3 - STATE
CONTROL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
DIR
SI
D0
D1
D2
D3
VSS
CD40105BMS
TOP VIEW
1
2
3
4
5
6
7
8
16
VDD
15
SO
14
DOR
13
Q0
12
Q1
Q2
11
10
Q3
9
MR
Functional Diagram
3-STATE
CONTROL
SHIFT IN
SHIFT OUT
MASTER
RESET
7-1317
D0
D1
D2
D3
1
4
5
6
7
3
15
9
13
12
11
10
14
2
VDD = 16
VSS = 8
File Number
Q0
Q1
Q2
Q3
DATA-OUT
READY
DATA-IN
READY
3353
CD40105BMS
Unloading Data - As soon as the first word has rippled to
the output, DATA-OUT READY (DOR) goes high, and data
can be removed by a falling edge on the SO input. This falling edge causes the DOR signal to go low while the word on
the output is dumped and the next word moves to the output.
As long as valid data are available in the FIFO, the DOR signal will go high again signifying that the next word is ready at
the output. When the FIFO is empty, DOR will remain low,
and any further commands will be ignored until a “1” marker
ripples down to the last control register, when DOR goes
high. Unloading of data is inhibited while the 3-state control
input is high. The 3-state control signal should not be shifted
from high to low (data outputs turned on) while the SHIFTOUT is at logic 0. This level change would cause the first
word to be shifted out (unloaded) immediately and the data
to be lost.
Cascading - The CD40105BMS can be cascaded to form
longer registers simply by connecting the DIR to SO and
DOR to SI. In the cascaded mode, a MASTER RESET pulse
must be applied after the supply voltage is turned on. For
words wider than 4 bits, the DIR and the DOR outputs must
Logic Diagram
MASTER
RESET
9
*
be gated together with AND gates. Their outputs drive the SI
and SO inputs in parallel, if expanding is done in both directions (see Figures 9 and 11).
3-State Outputs - In order to facilitate data busing, 3-state
outputs are provided on the data output lines, while the load
condition of the register can be detected by the state of the
DOR output.
Master Reset - A high on the MASTER RESET (MR) sets all
the control logic marker bits to “0”. DOR goes low and DIR
goes high. The contents of the data register are not
changed, only declared invalid, and will be superseded when
the first word is loaded. The shift-in must be low during Master Reset.
The CD40105BMS is supplied in these 16-lead outline packages:
Braze Seal DIP H4X
Frit Seal DIP H1F
Ceramic Flatpack H6W
**
2 15 1
DATA IN READY
(DIR)
SHIFT
OUT
3 - STATE
CONTROL
(OUTPUT
ENABLE)
SHIFT
IN
3
*
R
SQ
*
4
D0
*
D1
5
*
6
D2
*
D3
7
ALL INPUTS PROTECTED BY
*
COS/MOS PROTECTION
NETWORK
POSITIONS
R
Q
1
SQ
CL
CL
4
LATCHES
POS 1 POS 2 POS 3 POS 16
CL
4
LATCHES
VDD
CL
R
Q
2
SQ
CL
CL
4
LATCHES
4 - 15
CL
LATCHES
DATA
READY
14
(DOR)
R
Q
16
SQ
CL
4
CL
p
n
CL
R
SQ
3
STATE
OUTPUT
BUFFERS
DETAIL OF LATCHES
CL
p
13
12
11
10
Q0
Q1
Q2
Q3
VSS
n
CL
7-1318
Specifications CD40105BMS
Absolute Maximum Ratings Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1)
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-10µA
VDD = 18V, VIN = VDD or GND 3 -55oC-10µA
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional
(Note 4)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Input Voltage Low (Note
2)
Input Voltage High
(Note 2)
Tri-State Output
Leakage
F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >
VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC
VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V
VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V
VIL VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC- 4 V
VIH VDD = 15V , VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC11 - V
IOZL VIN = VDD or GND
VOUT = 0V
VDD = 20V 1 +25oC -0.4 - µA
VDD = 18V 3 -55oC -0.4 - µA
Thermal Resistance . . . . . . . . . . . . . . . . θ
Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K). . . . . .Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
GROUP A
SUBGROUPS TEMPERATURE
2 +125oC - 1000 µA
2 +125oC -1000 - nA
2 +125oC - 1000 nA
2 +125oC -12 - µA
ja
LIMITS
VDD/2
VOL <
VDD/2
θ
jc
UNITSMIN MAX
V
7-1319
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