Intersil Corporation CD40101BMS Datasheet

CD40101BMS

December 1992

Features

• High Voltage Type (20V Rating)

• 100% Tested for Quiescent Current at 20V

• 5V, 10V and 15V Parametric Ratings

• Maximum Input Current of 1µA at 18V Over Full Pack-

age Temperature Range; 100nA at 18V and +25

• Noise Margin (Over Full Package/Temperature Range)

- 1V at VDD = 5V

- 2V at VDD = 10V

- 2.5V at VDD = 15V

• Standardized Symmetrical Output Characteristics

• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”

Description

The CD40101BMS is a 9-bit (8 data bits plus 1 parity bit)
parity generator/checker. It may be used to detect errors in
data transmission or data retrieval. Odd and even outputs
facilitate odd or even parity generation and checking.

When used as a parity generator, a parity bit is supplied
along with the data to generate an even or odd parity output.

CMOS 9-Bit Parity Generator/Checker

Pinout

CD40101BMS

TOP VIEW

D1

1
D2
D3
D4
D9

VSS

2

3

4

5

6

7

o

C

ODD OUT

Functional Diagram

INHIBIT

8

D1 1

VDD

14

D8

13

D7

12

D6

11

D5

10

EVEN OUT

9

INHIBIT

8

VDD = 14
VSS = 7

When used as a parity checker, the received data bits and
parity bits are compared for correct parity. The even or odd
outputs are used to indicate an error in the received data.

Word length capability is expandable by cascading. The
CD40101BMS is also provided with an inhibit control. If the
inhibit control is set at logical “1”, the even and odd outputs
go to a logical “0”.

The CD40101BMS is supplied in these 14 lead outline
packages:

Braze Seal DIP H4H
Frit Seal DIP H1B
Ceramic Flatpack H3W

D2

D3

D4

D5

D6

D7

D8

D9

2

3

4

10

11

12

13

5

DECODE

EVEN
OUTPUT

9

ODD
OUTPUT

6

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

7-1286

File Number

3350

Specifications CD40101BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

Package Types D, F, K, H

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-10µA

VDD = 18V, VIN = VDD or GND 3 -55oC-10µA

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low
(Note 2)

Input Voltage High
(Note 2)

Input Voltage Low
(Note 2)

Input Voltage High
(Note 2)

NOTES: 1. All voltages referenced to device GND, 100% testing being

implemented.

2. Go/No Go test with limits applied to inputs.

VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V

VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V

VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V

VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V

Thermal Resistance . . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W

Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW

For TA = +100oC to +125oC (Package Type D, F, K). . . . . .Derate

Linearity at 12mW/oC to 200mW

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

GROUP A

SUBGROUPS TEMPERATURE

2 +125oC - 1000 µA

2 +125oC -1000 - nA

2 +125oC - 1000 nA

1, 2, 3 +25oC, +125oC, -55oC- 4 V

1, 2, 3 +25oC, +125oC, -55oC11 - V

3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.

ja

LIMITS

VDD/2

VOL <
VDD/2

θ

jc

UNITSMIN MAX

V

7-1287

Specifications CD40101BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP A

PARAMETER SYMBOL CONDITIONS (NOTE 1, 2)

Propagation Delay
Data-In To Output

Propagation Delay
Inhibit-In to Output

Transition Time TTHL

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 5 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA

Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA

Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL <

TPHL1
TPLH1

TPHL2
TPLH2

TTLH

VDD = 5V, VIN = VDD or GND 9 +25oC - 700 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 280 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

1V

SUBGROUPS TEMPERATURE

10, 11 +125oC, -55oC - 945 ns

10, 11 +125oC, -55oC - 378 ns

10, 11 +125oC, -55oC - 270 ns

+125oC - 150 µA

+125oC - 300 µA

+125oC - 600 µA

-55oC

-55oC

-55oC

-55oC

-55oC 0.64 - mA

-55oC 1.6 - mA

-55oC 4.2 - mA

-55oC - -0.64 mA

-55oC - -2.0 mA

-55oC - -1.6 mA

-55oC - -4.2 mA

1, 2 +25oC, +125oC,

-55oC

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

-50mV

-50mV

4.95 - V

9.95 - V

-3V

7-1288

Specifications CD40101BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC,

-55oC

Propagation Delay
Data to Output

Propagation Delay
Inhibit to Output

Transition Time TTLH

Input Capacitance CIN Any Input 1, 2 +25oC - 7.5 pF

NOTES:

1. All voltages referenced to device GND.

2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on
initial design release and upon design changes which would affect these characteristics.

3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC-25µA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V
N Threshold Voltage

Delta
P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V
P Threshold Voltage

Delta
Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >

Propagation Delay Time TPHL

NOTES: 1. All voltages referenced to device GND.

2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

TPHL1
TPLH1

TPHL2
TPLH2

TTHL

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

∆VTN VDD = 10V, ISS = -10µA 1, 4 +25oC-±1V

∆VTP VSS = 0V, IDD = 10µA 1, 4 +25oC-±1V

TPLH

VDD = 10V 1, 2, 3 +25oC - 300 ns
VDD = 15V 1, 2, 3 +25oC - 200 ns
VDD = 10V 1, 2, 3 +25oC - 140 ns
VDD = 15V 1, 2, 3 +25oC - 100 ns
VDD = 10V 1, 2, 3 +25oC - 100 ns
VDD = 15V 1, 2, 3 +25oC - 80 ns

VDD = 3V, VIN = VDD or GND
VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x

3. See Table 2 for +25oC limit.

4. Read and Record

7-V

LIMITS

VOL <

VDD/2

VDD/2

+25oC

Limit

UNITSMIN MAX

UNITSMIN MAX

V

ns

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC

PARAMETER SYMBOL DELTA LIMIT

Supply Current - MSI-2 IDD ± 1.0µA
Output Current (Sink) IOL5 ± 20% x Pre-Test Reading
Output Current (Source) IOH5A ± 20% x Pre-Test Reading

TABLE 6. APPLICABLE SUBGROUPS

MIL-STD-883

CONFORMANCE GROUP

Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

METHOD GROUP A SUBGROUPS READ AND RECORD

7-1289

Specifications CD40101BMS

TABLE 6. APPLICABLE SUBGROUPS

MIL-STD-883

CONFORMANCE GROUP

Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

PDA (Note 1) 100% 5004 1, 7, 9, Deltas

Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11

Subgroup B-6 Sample 5005 1, 7, 9

Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3

NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.

CONFORMANCE GROUPS

Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4

METHOD GROUP A SUBGROUPS READ AND RECORD

TABLE 7. TOTAL DOSE IRRADIATION

MIL-STD-883

METHOD

PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD

TEST READ AND RECORD

TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS

OSCILLATOR

FUNCTION OPEN GROUND VDD 9V ± -0.5V

Static Burn-In 1
Note 1

Static Burn-In 2
Note 1

Dynamic Burn­In Note 1

Irradiation
Note 2

NOTES:

1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V

2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V

6, 9 1-5, 7, 8, 10-13 14

6, 9 7 1-5, 8, 10-14

- 4, 7 12, 14 6, 9 2, 3, 5, 8, 10 1, 11, 13

6, 9 7 1-5, 8, 10-14

50kHz 25kHz

7-1290

Logic Diagram

1

D1

2

D2

3

D3

4

D4

10

D5

11

D6

12

D7

13

D8

5

D9

CD40101BMS

INHIBIT

8

VDD

EVEN

OUT
9

ODD
OUT

6

ALL INPUTS ARE PROTECTED

*

BY CMOS PROTECTION
NETWORK

VSS

TRUTH TABLE

INPUTS OUTPUTS

D1-D9 INHIBIT EVEN ODD

Σ1’s = Even 0 1 0
Σ1’s = Odd 0 0 1

X100

X = Don’t Care Logic 1 = High Logic 0 = Low

Typical Performance Characteristics

AMBIENT TEMPERATURE (TA) = +25oC

30

25

20

15

10

5

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

0 5 10 15

FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHAR-

GATE-TO-SOURCE VOLTAGE (VGS) = 15V

10V

5V

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

ACTERISTICS

FIGURE 1.

AMBIENT TEMPERATURE (TA) = +25oC

15.0

12.5

10.0

7.5

5.0

2.5

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

0 5 10 15

GATE-TO-SOURCE VOLTAGE (VGS) = 15V

10V

5V

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT CHAR-

ACTERISTICS

7-1291

CD40101BMS

Typical Performance Characteristics (Continued)

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

0-5-10-15

AMBIENT TEMPERATURE (TA) = +25oC

GATE-TO-SOURCE VOLTAGE (VGS) = -5V

0

-5

-10

-15

-10V

-20

-25

-15V

-30

FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT

CHARACTERISTICS

AMBIENT TEMPERATURE (TA) = +25oC

400

300

SUPPLY VOLTAGE (VDD) = 5V

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

AMBIENT TEMPERATURE (TA) = +25oC

GATE-TO-SOURCE VOLTAGE (VGS) = -5V

-10V

-15V

OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT

CHARACTERISTICS

AMBIENT TEMPERATURE (TA) = +25oC

200

0-5-10-15

0

-5

-10

-15

OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

200

10V

15V

100

PROPAGATION DELAY TIME (tPHL, tPLH) (ns)

50

0 20 40 60 80 100

10 30 50 70 90

LOAD CAPACITANCE (CL) (pF)

FIGURE 6. TYPICAL PROPAGATION DELAY TIME AS A

FUNCTION OF LOAD CAPACITANCE

AMBIENT TEMPERATURE (TA) = +25oC

4

10

8

SUPPLY VOLTAGE (VDD) = 15V

6
4

2

3

10

8
6
4

2

2

10

8
6
4

2

2

10

8
6
4

2

DYNAMIC POWER DISSIPATION (PD) (µW)

10

1

8642

10

INPUT FREQUENCY (fIN) (kHz)

150

SUPPLY VOLTAGE (VDD) = 5V

100

10V

50

TRANSITION TIME (tTHL, tTLH) (ns)

0

0 40 60 80 10020

15V

LOAD CAPACITANCE (CL) (pF)

FIGURE 7. TYPICAL TRANSITION TIME AS A FUNCTION OF

LOAD CAPACITANCE

10V

10V

5V

CL = 50pF
CL = 15pF

8642

10

8642

2

10

8642

3

10

8642

4

FIGURE 8. TYPICAL DYNAMIC POWER DISSIPATION AS A FUNCTION OF INPUT FREQUENCY

7-1292

Chip Dimensions and Pad Layout

CD40101BMS

Dimensions in parenthesis are in millimeters and are
derived from the basic inch dimensions as indicated.
Grid graduations are in mils (10

-3

inch).

METALLIZATION: Thickness: 11kÅ − 14kÅ, AL.
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

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1293