Intersil Corporation CD4009UBMS Datasheet
CD4009UBMS
Data Sheet November 1994 File Number 3293
CMOS Hex Buffers/Converter
CD4009UBMS Hex Buffer/Converter may be used as a
CMOS to TTL or DTL logic-level converter or a CMOS highsink-current driver.
The CD4049UB is the preferred hex buffer replacement for
the CD4009UBMS in all applications except multiplexers.
For applications not requiring high sink current or voltage
conversion, the CD4069UB Hex Inverter is recommended.
The CD4009UBMS is supplied in these 16 lead outline packages:
Braze Seal DIP H4S
Frit Seal DIP H1E
Ceramic Flatpack H3X
Pinout
CD4009UBMS
TOP VIEW
VDD
VCC
A
G =
A
B
H =
B
C
I =
C
VSS
NC = NO CONNECTION
1
2
3
4
5
6
7
8
16
L =
15
F
F
14
NC
13
K =
12
E
E
11
10
J = D
9
D
Features
• Inverting Type
• High-Voltage Type (20V Rating)
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1µA at 18V Over Full
Package-Temperature Range;
o
- 10nA at 18V and +25
C
• 5V, 10V and 15V Parametric Ratings
Applications
• CMOS To DTL/TTL Hex Converter
• CMOS Current “Sink” or “Source” Driver
• CMOS High-to-Low Logic-Level Converter
• Multiplexer - 1 to 6 or 6 to 1
Functional Diagram
NC
VCC
VSS
VDD
32
A
54
B
76
C
910
13
16
D
1
8
11 12
E
14 15
F
G =
H = B
I = C
J = D
K = E
L = F
A
NC = NO CONNECTION
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
CD4009UBMS
Absolute Maximum Ratings Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . .-0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V
DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1)
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-2µA
VDD = 18V, VIN = VDD or GND 3 -55oC-2µA
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 3.0 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 8.0 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 24.0 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.2 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -0.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -0.45 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -1.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >
VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
NOTES: 1. All voltages referenced to device GND, 100% testing being im-
plemented.
2. Go/No Go test with limits applied to inputs
VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.0 V
VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 4.0 - V
VIL VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VIH VDD = 15V, VOH > 13.5V,
VOL < 1.5V
Thermal Resistance. . . . . . . . . . . . . . . . θ
Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W
Flatpack Package. . . . . . . . . . . . . . . . 70oC/W 20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW
For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC
GROUP A
SUBGROUPS TEMPERATURE
2 +125oC - 200 µA
2 +125oC -1000 - nA
2 +125oC - 1000 nA
1, 2, 3 +25oC, +125oC, -55oC - 2.5 V
1, 2, 3 +25oC, +125oC, -55oC 12.5 - V
3. Foraccuracy,voltage is measureddifferentiallyto VDD. Limitis
0.050V max.
ja
LIMITS
VDD/2
VOL <
VDD/2
θ
jc
UNITSMIN MAX
V
2
CD4009UBMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
PARAMETER SYMBOL CONDITIONS (NOTE 1, 2)
Propagation Delay TPHL VDD = 5V, VIN = VDD or GND 9 +25oC - 60 ns
Propagation Delay TPLH VDD = 5V, VIN = VDD or GND 9 +25oC - 140 ns
Transition Time TTHL VDD = 5V, VIN = VDD or GND 9 +25oC - 70 ns
Transition Time TTLH VDD = 5V, VIN = VDD or GND 9 +25oC - 350 ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 1 µA
VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA
VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA
Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, -
Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -
Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -
Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -
Output Current (Sink) IOL4 VDD = 4.5V, VOUT = 0.4V 1, 2 +25oC 2.6 - mA
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 2.1 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 5.6 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 16.0 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.15 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -0.58 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.33 mA
Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -1.1 mA
Input Voltage Low VIL VDD= 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -
SUBGROUPS TEMPERATURE
10, 11 +125oC, -55oC - 81 ns
10, 11 +125oC, -55oC - 189 ns
10, 11 +125oC, -55oC - 95 ns
10, 11 +125oC, -55oC - 473 ns
+125oC-30µA
+125oC-60µA
+125oC - 120 µA
55oC
55oC
55oC
55oC
+125oC 1.8 - mA
-55oC 3.2 - mA
-55oC 3.75 - mA
-55oC 10.0 - mA
-55oC 30.0 - mA
-55oC - -0.25 mA
-55oC - -1.0 mA
-55oC - -0.55 mA
-55oC - -1.65 mA
55oC
LIMITS
UNITSMIN MAX
LIMITS
UNITSMIN MAX
-50mV
-50mV
4.95 - V
9.95 - V
-2V
3
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