Intersil Corporation CD4008BMS Datasheet

November 1994

CD4008BMS

CMOS 4-Bit Full Adder With

Parallel Carry Out

Features

• High-Voltage Type (20V Rating)

• 4 Sum Outputs Plus Parallel Look-ahead Carry-Output

• High-Speed Operation - Sum In-To-Sum Out, 160ns
Typ; Carry In-To-Carry Out, 5ns Typ. At VDD = 10V,
CL=50pF

• Standardized Symmetrical Output Characteristics

• 100% Tested For Quiescent Current At 20V

• Maximum Input Current of 1µa at 18V Over Full Pack­age-Temperature Range;

- 100nA at 18V and 25oC

• Noise Margin (Over Full Package T emperature Range):

- 1V at VDD = 5V

- 2V at VDD = 10V

- 2.5V at VDD = 15V

• 5V, 10V and 15V Parametric Ratings

• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”

Applications

• Binary Addition/Arithmetic Units

Description

CD4008BMS types consist of four full adder stages with fast
look ahead carry provision from stage to stage. Circuitry is
included to provide a fast “parallel-carry-out” but to permit
high-speed operation in arithmetic sections using several
CD4008BMS’s.

CD4008BMS inputs include the four sets of bits to be added,
A1 to A4 and B1 to B4, in addition to the “Carry In” bit from a
previous section. CD4008BMS outputs include the four sum
bits, S1 to S4. In addition to the high speed “parallel-carry­out” which may be utilized at a succeeding CD4008BMS
section.

The CD4008BMS is supplied in these 16-lead outline pack­ages:

Braze Seal DIP H4T
Frit Seal DIP H1F
Ceramic Flatpack H6W

Pinout

A4
B3
A3
B2
A2
B1
A1

VSS

Logic Diagram

HIGH SPEED

PAR CARRY

15

*

B4

1

*

A4

2

*

B3

3

A3

*

4

*

B2

5

*

A2

6

*

B1

7

*

A1

9

*

C1

(CARRY-IN)

VDD = 16

VSS = 8

A

i

0
1
0
1
0
1
0
1

B

i

0
0
1
1
0
0
1
1

CD4008BMS

TOP VIEW

16

1
2
3
4
5
6
7
8

(CARRY-OUT)

SUM

C4

SUM

C3

SUM

C2

SUM

*ALL INPUTS ARE PROTECTED

BY CMOS PROTECTION
NETWORK

TRUTH TABLE

C

i

0
0
0
0
1
1
1
1

VDD

15

B4

14

CO

13

S4

12

S3

11

S2

10

S1

9

C1

14

CO

13

S4

12

S3

11

S2

10

S1

C

O

0
0
0
1
0
1
1
1

VDD

VSS

SUM

0
1
1
0
1
0
0
1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

7-675

File Number

3292

Specifications CD4008BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range. . . . . . . . . . . . . . . . -55

Package Types D, F, K, H

Storage Temperature Range (TSTG). . . . . . . . . . . -65

o

C to +125oC

o

C to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25

VDD = 18V, VIN = VDD or GND 3 -55oC-10µA

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low

VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V

(Note 2)
Input Voltage High

VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V

(Note 2)
Input Voltage Low

(Note 2)
Input Voltage High

(Note 2)

VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V

VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V

NOTES: 1. All voltages referenced to device GND, 100% testing being

implemented.

2. Go/No Go test with limits applied to inputs

Thermal Resistance . . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W

Flatpack Package . . . . . . . . . . . . . . . . 70

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55
For TA = +100

o

C

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

o

C to +100oC (Package Type D, F, K). . . . . .500mW

o

C to +125oC (Package Type D, F, K) . . . . .Derate

Linearity at 12mW/oC to 200mW

ja

o

C/W 20oC/W

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

GROUP A

LIMITS

SUBGROUPS TEMPERATURE

o

C-10µA

2 +125oC - 1000 µA

o

C -100 - nA

2 +125oC -1000 - nA

2 +125oC - 1000 nA

VOL <

VDD/2

VDD/2

1, 2, 3 +25oC, +125oC, -55oC- 4 V

1, 2, 3 +25oC, +125oC, -55oC11 - V

3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.

θ

jc

UNITSMIN MAX

V

7-676

Specifications CD4008BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP A

PARAMETER SYMBOL CONDITIONS (NOTE 1, 2)

Propagation Delay
Sum In to Sum Out

Propagation Delay
Carry In To Cum Out

Propagation Delay
Sum In To Carry Out

Propagation Delay
Carry In To
Carry Out

Transition Time TTHL

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 5 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA

TPHL1
TPLH1

TPHL2
TPLH2

TPHL3
TPLH3

TPHL4
TPLH4

TTLH

VDD = 5V, VIN = VDD or GND 9 +25oC - 800 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 740 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 400 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

SUBGROUPS TEMPERATURE

10, 11 +125oC, -55oC - 1080 ns

10, 11 +125oC, -55oC - 999 ns

10, 11 +125oC, -55oC - 540 ns

10, 11 +125oC, -55oC - 270 ns

10, 11 +125oC, -55oC - 270 ns

+125oC - 150 µA

+125oC - 300 µA

+125oC - 600 µA

-55oC

-55oC

-55oC

-55oC

-55oC 0.64 - mA

-55oC 1.6 - mA

-55oC 4.2 - mA

-55oC - -0.64 mA

-55oC - -2.0 mA

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

-50mV

-50mV

4.95 - V

9.95 - V

7-677