(CMO
S4x4
Crosspoint
Switch
with
Control
Memory
HighVoltage
Type
(20V
Rating))
Author
()
Key-
words
(Harris
Semiconductor,
Telecom,
SLICs,
SLACs
, Telephone,
Features
• Low ON Resistance . . . . . . . . . .75Ω (Typ) at VDD= 12V
• “Built-In” Control Latches
• Large Analog Signal Capability. . . . . . . . . . . . . . . ±V
• 10MHz Switch Bandwidth
• Matched Switch Characteristics ∆R
V
= 12V
DD
• High Linearity - 0.5% Distortion (Typ) at f = 1kHz,
V
= 5V
IN
• Standard CMOS Noise Immunity
• 100% Tested for Maximum Quiescent Current at 20V
, VDD = 10V, and RL = 1kΩ
P-P
=18Ω (Typ) at
ON
DD
Ordering Information
PART
NUMBER
CD22100E-40 to 8516 Ld PDIPE16.3
CD22100F-55 to 12516 Ld CERDIPF16.3
Pinout
X2
DATA IN
C
D
B
A
STROBE
V
SS
TEMP . RANGE
(oC)PACKAGEPKG. NO.
CD22100
(PDIP, CERDIP)
TOP VIEW
1
2
3
4
5
6
7
8
Functional Diagram
STROBE
7
16
V
DD
Y1
15
14
Y2
13
X4
12
X3
11
Y4
10
Y3
9
X1
6
A
5
B
3
ADDRESS
C
4
D
4-LINE TO 16-LINE DECODER
Description
CD22100 combines a 4 x 4 array of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch
circuits. Any one of the sixteen transmission gates (crosspoints) can be selected by applying the appropriate four line
/2
address. Theselected transmission gate canbe turned on or
off by applying a logic one or zero, respectively, to the data
input and strobing the strobe input to a logic one. Any
number of the transmission gates canbe ON simultaneously.
When the required operating power is applied to the
CD22100, the states of the 16 switches are indeterminate.
Therefore, all switches must be turned off by putting the
strobe high and data in low,and then addressing all switches
in succession.
DAT A
IN
2
0123
4567
891011
16 CONTROL LATCHES
12131415
911213
X1X2X3X4
15
Y1
14
Y2
10
Y3
11
Y4
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
For TA = -40oC to 60oC (Package Type E) . . . . . . . . . . . . 500mW
For TA = 60oC to 85oC
(Package Type E) . . . . . . . . Derate Linearly 12mW/oC to 200mW
For TA = -55oC to 100oC (Package Type F) . . . . . . . . . . . 500mW
For TA = 100oC to 125oC
(Package Type F) . . . . . . . . Derate Linearly 12mW/oC to 200mW
Device Dissipation per Transmission Gate
For TA = Full Package Temperature Range (All Types) . . . . . 100mW
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.