Intersil Corporation CA3141 Datasheet
Semiconductor
OBSOLETE PRODUCT
CA3141
NO RECOMMENDED REPLACEMENT
Call Central Applications 1-800-442-7747
January 1999
or email: centapp@harris.com
Features
• Matched Monolithic Construction
Match (Each Diode Pair). . . . 0.55mV At IF = 1mA
-V
F
• Low Diode Capacitance. . . . . . . 0.3pF (Typ) at V
• High Diode-to-Substrate Breakdown. . . . . . . . . 30V (Min)
• Low Reverse (Leakage) Current . . . . . . . 100nA (Max)
Applications
• Balanced Modulators or Demodulators
• Analog Switches
• High-Voltage Diode Gates
• Current Ratio Detectors
Part Number Information
TEMP.
PART NUMBER
RANGE (oC) PACKAGE
High-Voltage Diode Array For Commercial,
Industrial and Military Applications
Description
The CA3141E High V oltage Diode Arra y Consists of ten general purpose high reverse breakdown diodes. Six diodes are
= 2V
R
PKG.
NO.
internally connected to form three common cathode diode
pairs, and the remaining four diodes are internally connected
to form two common anode diode pairs. Integrated circuit
construction assures excellent static and dynamic matching
of the diodes, making the CA3141 extremely useful for a
wide variety of applications in communications and switching
systems.
CA3141E -55 to 125 16 Ld PDIP E16.3
Pinout
TOP VIEW
1
2
3
4
5
6
7
8
CA3141
(PDIP)
D
D
1
D
D
2
D
D
3
D
D
4
D5D
10
16
15
9
14
7
13
12
8
11
6
10
9
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© Harris Corporation 1999
1
File Number 906.4
CA3141
Absolute Maximum Ratings Thermal Information
Inverse Voltage (PIV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Peak Diode -to-Substrate Voltage . . . . . . . . . . . . . . . . . . . . . . . 30V
Peak Forward Surge Current [IF (Surge)]. . . . . . . . . . . . . . . .100mA
DC Forward Current (IF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Thermal Resistance (Typical, Note 1) θJA (oC/W)
PDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Maximum Pow er Dissipation (Any One Diode) . . . . . . . . . . . . . . 50mW
Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300oC
Electrical Specifications T
= 25oC
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
DC Forward Voltage Drop V
F
IF (Anode) 100µA - 0.7 0.9 V
1mA - 0.78 1 V
10mA - 0.93 1.2 V
DC Reverse Breakdown Voltage V
DC Breakdown Voltage Between Any Diode and
(BR)R
V
(BR)DIIDI
IF = -10µA3050-V
= 10µA3050-V
Substrate
DC Reverse (Leakage) Current I
DC Reverse (Leakage) Current Between Any Diode
R
I
DI
VF = -20V - - 100 nA
VDI = 20V - - 100 nA
and Substrate
Magnitude of Diode Offset Voltage Betw een Diode Pairs VDI = 20V, IFA = 1mA - 0.55 - mV
Temperature Coefficient of Forward Voltage Drop ∆VF/∆TIF = 1mA - -1.5 - mV/oC
Reverse Recovery Time t
Diode Capacitance C
Diode Anode-to-Substrate Capacitance C
Diode Cathode-to-Substrate Capacitance C
RR
D
DAI
DCI
IF = 2mA, IR = 2mA - 50 - ns
See Figure 4 pF
See Figure 5 pF
See Figure 6 pF
Magnitude of Cathode-to-Anode Current Ratio |IFC/IFA|IFA = 1mA, VDS = 10V 0.9 0.96 - -
Typical Performance Curves
1
TA = 25oC
0.8
0.6
0.4
0.2
DC FORWARD VOLTAGE DROP (V)
0
0.1 1 10
FORWARD CURRENT (µA)
2
10
3
10
FIGURE 1. DC FORW ARD V OLT A GE DR OP vs FOR W ARD
CURRENT
1.2
0.8
0.6
0.4
0.2
DC FORWARD VOLTAGE DROP (V)
4
10
0
-1001-50 0 50 100 150
TEMPERATURE (
o
C)
IF = 10mA
= 3mA
I
F
= 1mA
I
F
I
= 300µA
F
I
= 100µA
F
I
= 10µA
F
IF = 1µA
I
= 100nA
F
FIGURE 2. DC FORWARD VOLTAGE DROP vs
TEMPERATURE
2
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