Intersil Corporation CA3096C, CA3096A, CA3096 Datasheet
CA3096, CA3096A,
CA3096C
December 1997
Applications
• Five-Independent Transistors
- Three NPN and
- Two PNP
• Differential Amplifiers
• DC Amplifiers
• Sense Amplifiers
• Level Shifters
• Timers
• Lamp and Relay Drivers
• Thyristor Firing Circuits
• Temperature Compensated Amplifiers
• Operational Amplifiers
Ordering Information
PART NUMBER
(BRAND)
CA3096AE -55 to 125 16 Ld PDIP E16.3
CA3096AM
(3096A)
CA3096AM96
(3096A)
CA3096CE -55 to 125 16 Ld PDIP E16.3
CA3096E -55 to 125 16 Ld PDIP E16.3
CA3096M
(3096)
CA3096M96
(3096)
TEMP.
RANGE (oC) PACKAGE
-55 to 125 16 Ld SOIC M16.15
-55 to 125 16 Ld SOIC Tape
and Reel
-55 to 125 16 Ld SOIC M16.15
-55 to 125 16 Ld SOIC Tape
and Reel
Pinout
CA3096, CA3096A, CA3096C
(PDIP, SOIC)
TOP VIEW
16
1
2
Q
1
3
4
5
6
7
8
Q
5
Q
2
Q
4
Q
3
SUBSTRATE
15
14
13
12
11
10
9
PKG.
NO.
M16.15
M16.15
NPN/PNP Transistor Arrays
Description
The CA3096C, CA3096, and CA3096A are general purpose
high voltage silicon transistor arrays. Each array consists of
five independent transistors (two PNP and three NPN types)
on a common substrate, which has a separate connection.
Independent connections for each transistor permit maximum flexibility in circuit design.
Types CA3096A, CA3096, and CA3096C are identical, except
that the CA3096A specifications include parameter matching
and greater stringency in I
CA3096C is a relaxed version of the CA3096.
CA3096, CA3096A, CA3096C
Essential Differences
CHARACTERISTIC CA3096A CA3096 CA3096C
V
(BR)CEO
V
(BR)CBO
hFE at 1mA
hFE at 100µA
I
CBO
I
CEO
V
CE SAT
|VIO| (mV) (Max)
|IIO| (µA) (Max)
(V) (Min)
NPN 35 35 24
PNP -40 -40 -24
(V) (Min)
NPN 45 45 30
PNP -40 -40 -24
NPN 150-500 150-500 100-670
PNP 20-200 20-200 15-200
PNP 40-250 40-250 30-300
(nA) (Max)
NPN 40 100 100
PNP -40 -100 -100
(nA) (Max)
NPN 100 1000 1000
PNP -100 -1000 -1000
(V) (Max)
NPN 0.5 0.7 0.7
NPN 5 - PNP 5 - -
NPN 0.6 - PNP 0.25 - -
CBO
, I
, and VCE(SAT). The
CEO
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
File Number 595.4
CA3096, CA3096A, CA3096C
Absolute Maximum Ratings Operating Conditions
NPN PNP
Collector-to-Emitter Voltage, V
CEO
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 35V -40V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V -24V
Collector-to-Base Voltage, V
CBO
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 45V -40V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V -24V
Collector-to-Substrate Voltage, V
CIO
(Note 1)
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 45V -
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V -
Emitter-to-Substrate Voltage, V
EIO
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . . - -40V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - -24V
Emitter-to-Base Voltage, V
EBO
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . . 6V -40V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V -24V
Collector Current, IC (All Types). . . . . . . . . . . . 50mA -10mA
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3096 is isolated from the substrate by an integral diode. The substrate (Terminal 16) must be
connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor
action.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
3. Care must be taken to avoid exceeding the maximum junction temperature. Use the total power dissipation (all transistors) and thermal
resistances to calculate the junction temperature.
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .-55oC to 125oC
Thermal Information
Thermal Resistance (Typical, Note 2) θJA (oC/W)
PDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Maximum Pow er Dissipation (Each Transistor, Note 3) . . . . . 200mW
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Electrical Specifications For Equipment Design, At T
CA3096 CA3096A CA3096C
PARAMETER
TEST
CONDITIONS
= 25oC
A
DC CHARACTERISTICS FOR EACH NPN TRANSISTOR
I
CBO
VCB = 10V,
- 0.001 100 - 0.001 40 - 0.001 100 nA
IE = 0
I
CEO
VCE = 10V,
- 0.006 1000 - 0.006 100 - 0.006 1000 nA
IB = 0
V
(BR)CEO
V
(BR)CBO
IC = 1mA, IB = 0 35 50 - 35 50 - 24 35 - V
IC = 10µA,
45 100 - 45 100 - 30 80 - V
IE = 0
V
(BR)CIO
ICI = 10µA,
45 100 - 45 100 - 30 80 - V
IB = IE = 0
V
(BR)EBO
IE = 10µA,
68-68-68 - V
IC = 0
V
Z
V
CE SAT
IZ = 10µA 6 7.9 9.8 6 7.9 9.8 6 7.9 9.8 V
lC = 10mA,
- 0.24 0.7 - 0.24 0.5 - 0.24 0.7 V
IB = 1mA
VBE (Note 4) IC = 1mA,
hFE (Note 4) 150 390 500 150 390 500 100 390 670
VCE = 5V
|∆VBE/∆T| (Note 4) IC = 1mA,
0.6 0.69 0.78 0.6 0.69 0.78 0.6 0.69 0.78 V
- 1.9 - - 1.9 - - 1.9 - mV/oC
VCE = 5V
DC CHARACTERISTICS FOR EACH PNP TRANSISTOR
I
CBO
VCB = -10V,
- -0.06 -100 - -0.006 -40 - -0.06 -100 nA
IE = 0
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX
2
CA3096, CA3096A, CA3096C
Electrical Specifications For Equipment Design, At T
TEST
PARAMETER
I
CEO
CONDITIONS
VCE = -10V,
IB = 0
V
(BR)CEO
IC = -100µA,
IB = 0
V
(BR)CBO
IC = -10µA,
IE = 0
V
(BR)EBO
IE = -10µA,
IC = 0
V
(BR)ElO
IEI = 10µA,
IB = IC = 0
V
CE SAT
IC = -1mA,
IB = -100µA
VBE (Note 4) IC = -100µA,
VCE = -5V
hFE (Note 4) IC = -100µA,
VCE = -5V
IC = -1mA,
VCE = -5V
|∆VBE/∆T| (Note 4) IC = -100µA,
VCE = -5V
I
CBO
I
CEO
V
(BR)CEO
V
(BR)CBO
V
(BR)CIO
V
(BR)EBO
Collector-Cutoff Current V
Collector-Cutoff Current V
Collector-to-Emitter Breakdown Voltage V
Collector-to-Base Breakdown Voltage h
Collector-to-Substrate Breakdown Voltage |∆VBE/∆T| Magnitude of Temperature Coefficient:
Emitter-to-Base Breakdown Voltage
NOTE:
4. Actual forcing current is via the emitter for this test.
CA3096 CA3096A CA3096C
- -0.12 -1000 - -0.12 -100 - -0.12 -1000 nA
-40 -75 - -40 -75 - -24 -30 - V
-40 -80 - -40 -80 - -24 -60 - V
-40 -100 - -40 -100 - -24 -80 - V
40 100 - 40 100 - 24 80 - V
- -0.16 -0.4 - -0.16 -0.4 - -0.16 -0.4 V
-0.5 -0.6 -0.7 -0.5 -0.6 -0.7 -0.5 -0.6 -0.7 V
40 85 250 40 85 250 30 85 300
20 47 200 20 47 200 15 47 200
- 2.2 - - 2.2 - - 2.2 - mV/oC
= 25oC (Continued)
A
Z
CE SAT
BE
FE
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX
Emitter-to-Base Zener Voltage
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Voltage
DC Forward-Current Transfer Ratio
(for each transistor)
Electrical Specifications For Equipment Design At T
= 25oC (CA3096A Only)
A
CA3096A
PARAMETER SYMBOL TEST CONDITIONS
FOR TRANSISTORS Q1 AND Q2 (AS A DIFFERENTIAL AMPLIFIER)
Absolute Input Offset Voltage |VIO|VCE = 5V, IC = 1mA - 0.3 5 mV
Absolute Input Offset Current |IIO| - 0.07 0.6 µA
Absolute Input Offset Voltage
Temperature Coefficient
∆V
IO
----------------- -
∆T
- 1.1 - µV/oC
FOR TRANSISTORS Q4 AND Q5 (AS A DIFFERENTIAL AMPLIFIER)
Absolute Input Offset Voltage |VIO|VCE = -5V, IC = -100µA
- 0.15 5 mV
RS= 0
Absolute Input Offset Current |IIO| - 2 250 nA
Absolute Input Offset Voltage
Temperature Coefficient
∆V
IO
----------------- -
∆T
- 0.54 - µV/oC
3
UNITSMIN TYP MAX
CA3096, CA3096A, CA3096C
Electrical Specifications Typical Values Intended Only for Design Guidance At T
= 25oC
A
TYPICAL
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
DYNAMIC CHARACTERISTICS FOR EACH NPN TRANSISTOR
Noise Figure (Low Frequency) NF f = 1kHz, VCE = 5V, IC = 1mA, RS = 1kΩ 2.2 dB
Low-Frequency, Input Resistance R
Low-Frequency Output Resistance R
I
O
f = 1.0kHz, VCE = 5V IC = 1 mA 10 kΩ
f = 1.0kHz, VCE = 5V IC = 1 mA 80 kΩ
Admittance Characteristics
Forward Transfer Admittance
Input Admittance
Output Admittance
Gain-Bandwidth Product f
g
f = 1MHz, VCE = 5V, IC = 1mA 7.5 mS
y
FE
y
y
OE
FE
b
f = 1MHz, VCE = 5V, IC = 1mA -j13 mS
FE
g
f = 1MHz, VCE = 5V, IC = 1mA 2.2 mS
IE
IE
b
f = 1MHz, VCE = 5V, IC = 1mA j3.1 mS
IE
g
f = 1MHz, VCE = 5V, IC = 1mA 0.76 mS
OE
b
f = 1MHz, VCE = 5V, IC = 1mA j2.4 mS
OE
T
VCE = 5V, IC = 1.0mA 280 MHz
VCE = 5V, IC = 5mA 335 MHz
Emitter-To-Base Capacitance C
Collector-To-Base Capacitance C
Collector-To-Substrate Capacitance C
EB
CB
CI
VEB = 3V 0.75 pF
VCB = 3V 0.46 pF
VCI = 3V 3.2 pF
DYNAMIC CHARACTERISTICS FOR EACH PNP TRANSISTOR
Noise Figure (Low Frequency) NF f = 1kHz, IC = 100µA, RS = 1kΩ 3dB
Low-Frequency Input Resistance R
Low-Frequency Output Resistance R
Gain-Bandwidth Product f
Emitter-To-Base Capacitance C
Collector-To-Base Capacitance C
Base-To-Substrate Capacitance C
I
O
T
EB
CB
BI
f = 1kHz, VCE = 5V, IC = 100µA27kΩ
f = 1kHz, VCE = 5V, IC = 100µA 680 kΩ
VCE = 5V, IC = 100µA 6.8 MHz
VEB = -3V 0.85 pF
VCB = -3V 2.25 pF
VBI = 3V 3.05 pF
Typical Applications
(SUBSTRATE)
f
500Ω
1
V+ = 10V
f
500Ω
2
NOTE: F
2
1
0.1µF
3
1kΩ
1kΩ
0.1µF
6
Q
5
2
4
OR F2 < 10kHz
1
Q
Q
5
44003
4
11
8
15 10 12
14
13
3kΩ
97
16
1µF3kΩ
OUTPUT
FIGURE 1. FREQUENCY COMPARATOR USING CA3096 FIGURE 2. FREQUENCY COMPARATOR CHARACTERISTICS
9
CENTER FREQUENCY: 1kHz
8
7
6
5
4
3
OUTPUT VOLTAGE (V)
2
1
0
-20 -10 0 10 20
f
- f1 > 0 f1 = f
2
FREQUENCY DEVIATION (kHz)
2
f1 - f2 > 0
4
Typical Applications (Continued)
CA3096, CA3096A, CA3096C
120V
3
AC
6.8kΩ
2W
NTC
SENSOR
2
12V
+
-
11
100µF
Q
1
1
R
P
Q
3
16
987
5.1kΩ 10kΩ
1310
Q
5
Q
4
15
12
10kΩ10kΩ 5.1kΩ
14
5
FIGURE 3. LINE-OPERATED LEVEL SWITCH USING CA3096A OR CA3096
13
Q
14
15 10
40841
MOSFET
5
11
Q
4
1kΩ
12
20kΩ 5kΩ 5kΩ
6
3
1
Q1Q
2
5 8
20kΩ
42
6
4
+6V
9
7
Q
Q
1kΩ
2
3
G
LOAD
OUTPUT
MT
MT
1
T2300B
2
36
---------------
V
±=
T
IOR
L
IF IO = 1mA AND RL = 1kΩ
= ± 36mV
V
T
V
IN
FIGURE 5. CA3096A SMALL-SIGNAL ZERO VOLTAGE DETECTOR HAVING NOISE IMMUNITY
50MΩ
5µF
1kΩ 3.9kΩ 10kΩ
TIME DELAY CHANGES ±7%
FOR SUPPLY VOLTAGE CHANGE OF ±10%
FIGURE 4. ONE-MINUTE TIMER USING CA3096A AND A MOSFET
V+
1kΩ
R
L
E
O
2kΩ
15
Q
5
13 6
Q
2
100Ω
5
42
I
O
Q
1kΩ
3
7
V-
100Ω
1
1kΩ
10
3
Q
1kΩ
12
Q
4
11
14
1
9
8
+V
16
T
V
IN
-V
T
E
O
0
t
t
5
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