Intersil Corporation CA3086 Datasheet
November 1996
CA3086
General Purpose NPN
Transistor Array
Applications
• Three Isolated Transistors and One Differentially
Connected Transistor Pair For Low-Power Applications
from DC to 120MHz
• General-Purpose Use in Signal Processing Systems
Operating in the DC to 190MHz Range
• Temperature Compensated Amplifiers
• See Application Note, AN5296 “Application of the
CA3018 Integrated-Circuit Transistor Array” for
Suggested Applications
Ordering Information
PART NUMBER
(BRAND)
CA3086 -55 to 125 14 Ld PDIP E14.3
CA3086M
(3086)
CA3086M96
(3086)
CA3086F -55 to 125 14 Ld CERDIP F14.3
TEMP.
RANGE (oC) PACKAGE
-55 to 125 14 Ld SOIC M14.15
-55 to 125 14 Ld SOIC T ape
and Reel
PKG.
M14.15
NO.
Description
The CA3086 consists of five general-purpose silicon NPN
transistors on a common monolithic substrate. Two of the
transistors are internally connected to form a differentially
connected pair.
The transistors of the CA3086 are well suited to a wide variety of applications in low-power systems at frequencies from
DC to 120MHz. They may be used as discrete transistors in
conventional circuits. However, they also provide the very
significant inherent advantages unique to integrated circuits,
such as compactness, ease of physical handling and thermal matching
Pinout
CA3086
(PDIP, CERDIP, SOIC)
TOP VIEW
1
Q
2
Q
1
3
Q
2
4
5
6
7
5
Q
4
Q
3
14
SUBSTRATE
13
12
11
10
9
8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
5-27
File Number 483.3
CA3086
Absolute Maximum Ratings Thermal Information
The following ratings apply for each transistor in the device:
Collector-to-Emitter Voltage, V
Collector-to-Base Voltage, V
Collector-to-Substrate Voltage, V
Emitter-to-Base Voltage, V
. . . . . . . . . . . . . . . . . . . . . 15V
CEO
. . . . . . . . . . . . . . . . . . . . . . 20V
CBO
(Note 1) . . . . . . . . . . . . 20V
CIO
. . . . . . . . . . . . . . . . . . . . . . . . . 5V
EBO
Collector Current, IC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor in the CA3086 is isolated from the substrate b y an integr al diode . The substr ate (Terminal 13) must be
connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor
action. To avoid undesirable coupling between transistors, the substrate (Terminal 13) should be maintained at either DC or signal (AC)
ground. A suitable bypass capacitor can be used to establish a signal ground.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W)
CERDIP Package . . . . . . . . . . . . . . . . 150 75
PDIP Package. . . . . . . . . . . . . . . . . . . 180 N/A
SOIC Package. . . . . . . . . . . . . . . . . . . 220 N/A
Maximum Power Dissipation (Any one transistor). . . . . . . . . 300mW
Maximum Junction Temperature (Hermetic Packages) . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Electrical Specifications T
= 25oC, For Equipment Design
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Collector-to-Substrate Breakdown Voltage V
Emitter-to-Base Breakdown V oltage V
Collector-Cutoff Current (Figure 1) I
Collector-Cutoff Current (Figure 2) I
DC Forward-Current Transfer Ratio (Figure 3) h
Electrical Specifications T
= 25oC, Typical Values Intended Only for Design Guidance
A
PARAMETER SYMBOL TEST CONDITIONS
DC Forward-Current Transfer Ratio
h
FE
(Figure 3)
Base-to-Emitter Voltage (Figure 4) V
BE
(BR)CBOlC
(BR)CEOIC
(BR)ClOIC
(BR)EBOIE
CBO
CEO
FE
= 10µA, IE = 0 20 60 - V
= 1mA, IB = 0 15 24 - V
= 10µA, ICI = 0 20 60 - V
= 10µA, IC = 0 5 7 - V
VCB = 10V, IE = 0, - 0.002 100 nA
VCE = 10V, IB = 0, - (Figure 2) 5 µA
VCE = 3V, IC = 1mA 40 100 -
TYPICAL
VALUES UNITS
VCE = 3V IC = 10mA 100
IC = 10µA54
VCE = 3V IE = 1 mA 0.715 V
IE = 10mA 0.800 V
VBE Temperature Coefficient (Figure 5) ∆VBE/∆TVCE = 3V, lC = 1 mA -1.9 mV/oC
Collector-to-Emitter
V
CE SAT
IB = 1mA, IC = 10mA 0.23 V
Saturation Voltage
Noise Figure (Low Frequency) NF f = 1kHz, VCE = 3V, IC = 100µA,
3.25 dB
RS = 1kΩ
5-28
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