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CA3045F
Datasheet
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Intersil Corporation CA3046M96, CA3046, CA3045F, CA3046M Datasheet

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Semiconductor
CA3045, CA3046
September 1998 File Number 341.4
General Purpose NPN Transistor Arrays
The transistors of the CA3045 and CA3046 are wellsuitedto a wide variety ofapplicationsinlowpower systems in the DC through VHF range. They may be used as discrete transistors in conventionalcircuits. However,inaddition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching.
Ordering Information
PART NUMBER
(BRAND)
CA3045F -55 to 125 14 Ld CERDIP F14.3 CA3046 -55 to 125 14 Ld PDIP E14.3 CA3046M
(3046) CA3046M96
(3046)
TEMP.
RANGE (oC) PACKAGE
-55 to 125 14 Ld SOIC M14.15
-55 to 125 14 Ld SOIC Tape and Reel
PKG.
M14.15
NO.
Features
• Two Matched Transistors
-V
Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV
BE
-I
Match. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2µA (Max)
IO
• Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz
• 5 General Purpose Monolithic Transistors
• Operation From DC to 120MHz
• Wide Operating Current Range
• Full Military Temperature Range
Applications
• Three Isolated Transistors and One Differentially Connected Transistor Pair for Low Power Applications at Frequencies from DC Through the VHF Range
• Custom Designed Differential Amplifiers
• Temperature Compensated Amplifiers
• See Application Note, AN5296 “Application of the CA3018 Integrated-Circuit Transistor Array” for Suggested Applications
Pinout
DIFFERENTIAL
CA3045, (CERDIP)
CA3046 (PDIP, SOIC)
TOP VIEW
1 2
PAIR
3 4 5 6 7
14
Q
5
13
Q
4
SUBSTRATE 12 11 10
9 8
Q
1
Q
2
Q
3
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
© Harris Corporation 1998
Copyright
CA3045, CA3046
Absolute Maximum Ratings Thermal Information
Collector-to-Emitter Voltage (V Collector-to-Base Voltage (V Collector-to-Substrate Voltage (V Emitter-to-Base Voltage (V
Collector Current (IC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor ac­tion.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
) . . . . . . . . . . . . . . . . . . . . . 15V
CEO
) . . . . . . . . . . . . . . . . . . . . . . . 20V
CBO
, Note 1). . . . . . . . . . . . . . 20V
CIO
) . . . . . . . . . . . . . . . . . . . . . . . . . 5V
EBO
Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . 180 N/A
CERDIP Package. . . . . . . . . . . . . . . . . 150 75
SOIC Package . . . . . . . . . . . . . . . . . . . 220 N/A
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature (Hermetic Packages). . . . . . . .175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Electrical Specifications T
= 25oC, characteristics apply for each transistor in CA3045 and CA3046 as specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
DC CHARACTERISTICS
Collector-to-Base Breakdown Voltage V Collector-to-Emitter Breakdown Voltage V Collector-to-Substrate Breakdown Voltage V Emitter-to-Base Breakdown Voltage V Collector Cutoff Current (Figure 1) I Collector Cutoff Current (Figure 2) I Forward Current Transfer Ratio (Static Beta)
(Note 3) (Figure 3)
InputOffset Current for Matched Pair Q1andQ2. |I
- I
IO1
| (Note 3) (Figure 4)
IO2
Base-to-Emitter Voltage (Note 3) (Figure 5) V
MagnitudeofInput Offet VoltageforDifferentialPair |V
- V
BE1
| (Note 3) (Figures 5, 7)
BE2
Magnitude of Input Offset Voltage for Isolated Transistors |V |V
- V
BE5
- V
BE4
|, |V
BE3
| (Note 3) (Figures 5, 7)
BE3
BE4
- V
BE5
|,
Temperature Coefficient of Base-to-Emitter Voltage (Figure 6)
(BR)CBOIC (BR)CEOIC
(BR)CIOIC
(BR)EBOIE
CBO CEO
h
FE
BE
∆V
BE
-------------- -
∆T
= 10µA, IE = 0 20 60 - V = 1mA, IB = 0 15 24 - V = 10µA, ICI = 0 20 60 - V
= 10µA, IC = 0 5 7 - V VCB = 10V, IE = 0 - 0.002 40 nA VCE = 10V, IB = 0 - See Fig. 2 0.5 µA VCE = 3V IC = 10mA - 100 - -
IC = 1mA 40 100 - ­IC = 10µA-54--
VCE = 3V, IC = 1mA - 0.3 2 µA
VCE = 3V IE = 1mA - 0.715 - V
IE = 10mA - 0.800 - V
VCE = 3V, IC = 1mA - 0.45 5 mV
VCE = 3V, IC = 1mA - 0.45 5 mV
VCE = 3V, IC = 1mA - -1.9 - mV/oC
Collector-to-Emitter Saturation Voltage V Temperature Coefficient: Magnitude of Input Off-
set Voltage (Figure 7)
CES
∆V
----------------
∆T
IB = 1mA, IC = 10mA - 0.23 - V VCE = 3V, IC = 1mA - 1.1 - µV/oC
IO
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure (Figure 9) NF f = 1kHz, VCE = 3V, IC = 100µA,
Source Resistance = 1kΩ
Low Frequency, Small Signal Equivalent Circuit Characteristics
Forward Current Transfer Ratio (Figure 11) h Short Circuit Input Impedance (Figure 11) h
FE
IE
f = 1kHz, VCE = 3V, IC = 1mA - 110 - ­f = 1kHz, VCE = 3V, IC = 1mA - 3.5 - kΩ
2
- 3.25 - dB
CA3045, CA3046
Electrical Specifications T
= 25oC, characteristics apply for each transistor in CA3045 and CA3046 as specified (Continued)
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Open Circuit Output Impedance (Figure 11) h OpenCircuit Reverse VoltageTransfer Ratio
(Figure 11)
Admittance Characteristics
Forward Transfer Admittance (Figure 12) Y Input Admittance (Figure 13) Y Output Admittance (Figure 14) Y
Reverse Transfer Admittance (Figure 15) Y Gain Bandwidth Product (Figure 16) f Emitter-to-Base Capacitance C Collector-to-Base Capacitance C Collector-to-Substrate Capacitance C
NOTE:
3. Actual forcing current is via the emitter for this test.
Typical Performance Curves
2
10
IE = 0
10
1
-1
10
V
CB
V
CB
= 5V
VCB= 15V
= 10V
OE
h
RE
FE
IE OE RE
T EB CB
CI
f = 1kHz, VCE = 3V, IC = 1mA - 15.6 - µS f = 1kHz, VCE = 3V, IC = 1mA - 1.8 x 10
-4
--
f = 1kHz, VCE = 3V, IC = 1mA - 31 - j1.5 - ­f = 1kHz, VCE = 3V, IC = 1mA - 0.3 + j0.04 - ­f = 1kHz, VCE = 3V, IC = 1mA - 0.001 + j0.03 - ­f = 1kHz, VCE = 3V, IC = 1mA - See Fig. 14 - ­VCE = 3V, IC = 3mA 300 550 - MHz VEB = 3V, IE = 0 - 0.6 - pF VCB = 3V, IC = 0 - 0.58 - pF VCS = 3V, IC = 0 - 2.8 - pF
3
10
IB = 0
2
10
10
1
VCE = 10V
VCE = 5V
-2
10
-3
10
COLLECTOR CUTOFF CURRENT (nA)
-4
10
0 25 50 75 100 125
TEMPERATURE (oC)
FIGURE1. TYPICAL COLLECTOR-TO-B ASECUTOFFCURRENT
vs TEMPERA TURE FOR EACH TRANSISTOR
120
VCE = 3V T
110
)
FE
TRANSFER RATIO (h
STATIC FORWARD CURRENT
A
100
90
80
70
60
50
0.01
= 25oC
0.1 1.0 10
EMITTER CURRENT (mA)
h
h
FE1
-------------
h
FE2
FE
OR
h
FE2
-------------
h
FE1
1.1
1.0
0.9
0.8
FIGURE 3. TYPICAL ST ATIC FORWARDCURRENT TRANSFER
RA TIO AND BETA RATIO FOR Q1 AND Q2 vs EMITTER CURRENT
BETA RATIO
-1
10
-2
10
COLLECTOR CUTOFF CURRENT (nA)
-3
10
0 25 50 75 100 125
TEMPERATURE (
o
C)
FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF
CURRENT vs TEMPERATURE FOR EACH TRANSISTOR
10
VCE = 3V
= 25oC
T
A
1.0
0.1
INPUT OFFSET CURRENT (µA)
0.01
0.01 0.1 1.0 10 COLLECTOR CURRENT (mA)
FIGURE 4. TYPICAL INPUT OFFSET CURRENT FOR
MATCHED TRANSISTOR PAIR Q1Q2 vs COLLECTOR CURRENT
3
CA3045, CA3046
Typical Performance Curves
0.8 VCE = 3V
T
= 25oC
A
0.7
0.6
0.5
INPUT OFFSET VOLTAGE
BASE-TO-EMITTER VOLTAGE (V)
0.4
0.01 0.1 1.0 10
V
BE
EMITTER CURRENT (mA)
(Continued)
FIGURE 5. TYPICAL STATIC BASE-TO-EMITTERVOLTA G E
CHARACTERISTICSAND INPUT OFFSET VOLTAGE FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED TRANSISTORS vs EMITTER CURRENT
VCE = 3V
4.00
3.00
2.00
0.75
0.50
0.25
INPUT OFFSET VOLTAGE (mV)
0
-75 -50 -25 0 25 50 75 100 125
IE = 10mA
IE = 1mA
IE = 0.1mA
TEMPERATURE (
o
C)
FIGURE7. TYPICALINPUTOFFSETVOLTAGECHARACTERISTICS
FOR DIFFERENTIAL P AIR AND PAIRED ISOLA TED TRANSISTORS vs TEMPERATURE
3
2
1
0
INPUT OFFSET VOLTAGE (mV)
VCE= 3V
1.0
0.9
0.8
0.7
0.6
0.5
BASE-TO-EMITTER VOLTAGE (V)
0.4
IE= 3mA
= 1mA
I
E
= 0.5mA
I
E
-75 -50 -25 0 25 50 75 100 125 TEMPERATURE (
o
C)
FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE
CHARACTERISTIC vs TEMPERATURE FOR EACH TRANSISTOR
VCE = 3V
= 500Ω
R
S
T
= 25oC
A
20
15
10
5
NOISE FIGURE (dB)
0
0.01 0.1 1.0
f = 0.1kHz
f = 1kHz
f = 10kHz
COLLECTOR CURRENT (mA)
FIGURE 8. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
VCE = 3V R
= 1000Ω
S
T
= 25oC
A
20
15
f = 1kHz
10
5
NOISE FIGURE (dB)
0
0.01 0.1 1
f = 10kHz
f = 0.1kHz
COLLECTOR CURRENT (mA)
30
VCE = 3V
= 10000Ω
R
S
25
= 25oC
T
A
20
15
10
NOISE FIGURE (dB)
5
0
f = 1kHz
f = 10kHz
0.01 0.1 1
f = 0.1kHz
COLLECTOR CURRENT (mA)
FIGURE 9. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT FIGURE 10. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
4
CA3045, CA3046
Typical Performance Curves
100
VCE = 3V f = 1kHz
= 25oC
T
A
h
10
h
1.0
NORMALIZED h PARAMETERS
0.1
0.01 0.1 1.0 10
IE
RE
hFE = 110
= 3.5kΩ
h
IE
h
= 1.88 x 10
RE
hOE = 15.6µS
COLLECTOR CURRENT (mA)
(Continued)
AT
-4
1mA
h
RE
FIGURE11. TYPICAL NORMALIZEDFORW ARDCURRENT
TRANSFER RA TIO , SHORT CIRCUIT INPUT IMPEDANCE, OPEN CIRCUIT OUTPUT IMPEDANCE, AND OPEN CIRCUIT REVERSE VOLTA GE TRANSFER RA TIO vs COLLECT OR CURRENT
6
COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA
5
)
IE
) (mS)
IE
4
3
2
)
FE
h
OE
h
FE
h
IE
FORWARD TRANSFER CONDUCTANCE (g
COMMON EMITTER CIRCUIT, BASE INPUT
40
TA = 25oC, VCE = 3V, IC = 1mA
) (mS)
30
FE
20
10
0
OR SUSCEPTANCE (b
-10
-20
0.1 10 100
b
FE
1
FREQUENCY (MHz)
g
FE
FIGURE 12. TYPICAL FORWARDTRANSFER ADMITTANCEvs
FREQUENCY
COMMON EMITTER CIRCUIT, BASE INPUT
6
TA = 25oC, VCE = 3V, IC = 1mA
)
OE
5
) (mS)
OE
4
b
IE
3
2
b
OE
INPUT CONDUCTANCE (g
OR SUSCEPTANCE (b
1
0
0.1 10 100
g
IE
1
FREQUENCY (MHz)
OR SUSCEPTANCE (b
OUTPUT CONDUCTANCE (g
1
0
0.1 10 1001
g
FREQUENCY (MHz)
FIGURE 13. TYPICAL INPUT ADMITTANCE vs FREQUENCY FIGURE 14. TYPICAL OUTPUT ADMITTANCE vs FREQUENCY
)
RE
REVERSE TRANSFER CONDUCTANCE (g
FIGURE 15. TYPICAL REVERSE TRANSFER ADMITTANCEvs
COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA
) (mS)
RE
0
-0.5
-1.0
OR SUSCEPTANCE (b
-1.5
-2.0 1 10010
gREIS SMALL AT FREQUENCIES
FREQUENCY (MHz)
FREQUENCY
LESS THAN 500MHz
VCE = 3V T
= 25oC
1000
b
RE
GAIN BANDWIDTH PRODUCT (MHz)
A
900 800 700 600 500 400 300 200 100
01234567891011121314
COLLECTOR CURRENT (mA)
FIGURE 16. TYPICAL GAIN BANDWIDTH PRODUCT vs
COLLECTOR CURRENT
OE
5
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