Intersil Corporation CA3039 Datasheet

CA3039

November 1996

Features

• Six Matched Diodes on a Common Substrate

• Excellent Reverse Recovery Time . . . . . . . . . 1ns (Typ)

Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mV (Max)

•V

F

• Low Capacitance . . . . . . C

= 0.65pF (Typ) at VR = -2V

D

Applications

• Ultra-Fast Low Capacitance Matched Diodes for

Applications in Communications and Switching
Systems

• Balanced Modulators or Demodulators

• Ring Modulators

• High Speed Diode Gates

• Analog Switches

Diode Array

Description

The CA3039 consists of six ultra-fast, low capacitance
diodes on a common monolithic substrate. Integrated circuit
construction assures excellent static and dynamic matching
of the diodes, making the array extremely useful for a wide
variety of applications in communication and switching
systems.

Five of the diodes are independently accessible, the sixth
shares a common terminal with the substrate.

For applications such as balanced modulators or ring
modulators where capacitive balance is important, the
substrate should be returned to a DC potential which is
significantly more negative (with respect to the active diodes)
than the peak signal applied.

Ordering Information

TEMP.

PART NUMBER

CA3039 -55 to 125 12 Pin Metal Can T12.B
CA3039M -55 to 125 14 Ld SOIC M14.15
CA3039M96 -55 to 125 14 Ld SOIC Tape

RANGE (oC) PACKAGE

and Reel

PKG.

NO.

M14.15

Pinouts

NC

CA3039

(SOIC)

TOP VIEW

1
2
3

D

4

4
5

D

3

6
7

CA3039

(METAL CAN)

TOP VIEW

D

D

14

5

13

SUBSTRATE

12

D

6DS

11
10

D

1

NC

9

2

8

2

3

4

12

1

D

4

D

3

D

5

11

D

5

D

2

6

10

6

D

9

D

S

1

8

7

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 1999

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File Number 343.3

CA3039

Absolute Maximum Ratings Thermal Information

Inverse Voltage (PIV) for: D1 - D5 . . . . . . . . . . . . . . . . . . . . . . . . 5V

D6. . . . . . . . . . . . . . . . . . . . . . .0.5V

Diode-to-Substrate Voltage (VDI) for D1 - D5. . . . . . . . . . . .20V, -1V

(Terminal 1, 4, 5, 8 or 12 to Terminal 10)

DC Forward Current (IF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25mA

Recurrent Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . .100mA

Forward Surge Current (I

(SURGE)

F

). . . . . . . . . . . . . . . . . . . .100mA

Operating Conditions

Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. θJA is measured with the component mounted on an evaluation PC board in free air.

Thermal Resistance (Typical, Note 1) θJA (oC/W) θJC (oC/W)

Metal Can Package. . . . . . . . . . . . . . . 200 120

SOIC Package. . . . . . . . . . . . . . . . . . . 220 N/A

Maximum Power Dissipation (Any One Diode) . . . . . . . . . . .100mW

Maximum Junction Temperature (Metal Can Package) . . . . . . . 175oC

Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC

Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC

(SOIC - Lead Tips Only)

Electrical Specifications T

= 25oC; Characteristics apply for each diode unit, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

DC Forward Voltage Drop (Figure 1) V

DC Reverse Breakdown Voltage V
DC Reverse Breakdown Voltage Between Any

Diode Unit and Substrate
DC Reverse (Leakage) Current (Figure 2) I
DC Reverse (Leakage) Current Between Any

Diode Unit and Substrate (Figure 3)
Magnitude of Diode Offset Voltage (Note 2)

VF1VF2–

(Figure 1)
Temperature Coefficient of |V

- VF2| (Figure 4) IF = 1mA - 1.0 - µV/oC

F1

∆ VF1VF2–

----------------------------------

Temperature Coefficient of Forward Drop
(Figure 5)

(BR)R

V

(BR)R

∆T

∆V

-----------

∆T

F

IF = 50µA - 0.65 0.69 V

= 1mA - 0.73 0.78 V

I

F

I

= 3mA - 0.76 0.80 V

F

= 10mA - 0.81 0.90 V

I

F

IR = -10µA57-V
IR = -10µA20--V

R

I

R

F

VR = -4V - 0.016 100 nA
VR = -10V - 0.022 100 nA

I

= 1mA - 0.5 5.0 mV

F

= 1mA - -1.9 - mV/oC

I

F

DC Forward Voltage Drop for Anode-to­Substrate Diode (D

)

S

Reverse Recovery Time t
Diode Resistance (Figure 6) R
Diode Capacitance (Figure 7) C
Diode-to-Substrate Capacitance (Figure 8) C

V

RR

F

D

D

DI

IF = 1mA - 0.65 - V

IF = 10mA, IR = -10mA - 1.0 - ns
f = 1kHz, IF = 1mA 25 30 45 Ω
VR = -2V, IF = 0 - 0.65 - pF
VDI = 4V, IF = 0 - 3.2 - pF

NOTE:

2. Magnitude of Diode Offset Voltage is the difference in DC Forward Voltage Drops of any two diode units.

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