Intersil Corporation BYW51-150, BYW51-100 Datasheet
BYW51-100, BYW51-150, BYW51-200
June 1995 File Number 1412.2
8A, 100V - 200V Ultrafast Dual Diodes
The BYW51 series devices are low forward voltage drop,
ultra-fast-recovery rectifiers (t
< 35ns). They use a planar
RR
ion-implanted epitaxial construction.
These devices are intended for use as output rectifiers and
fly-wheel diodes in a variety of high-frequency pulse-widthmodulated and switching regulators. Their low stored charge
and attendant fast reverse-recovery behavior minimize electrical noise generation and in many circuits markedly reduce
the turn-on dissipation of the associated power switching
transistors.
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
BYW51-100 TO-220AB BYW51100
BYW51-150 TO-220AB BYW51150
BYW51-200 TO-220AB BYW51200
NOTE: When ordering, use the entire part number.
Features
• Ultra Fast Recovery Time (<35ns)
• Low Forward Voltage
• Low Thermal Resistance
• Planar Design
• Wire-Bonded Construction
Applications
• General Purpose
• Power Switching Circuits to 100kHz
• Full-Wave Rectification
Package
JEDEC TO-220AB
ANODE 1
CATHODE
ANODE 2
CATHODE
(FLANGE)
Symbol
K
A1 A2
Absolute Maximum Ratings Per Junction
BYW51-100 BYW51-150 BYW51-200 UNITS
Maximum Peak Repetitive Reverse Voltage . . . . . . . . . . .V
Maximum Peak Surge Voltage. . . . . . . . . . . . . . . . . . . . . . V
Repetitive Peak Surge Current. . . . . . . . . . . . . . l
Nonrepetitive Peak Surge Current . . . . . . . . . . . . lF(RMS), Total 20 20 20 A
Average Rectified forward Current. . . . . . . . . . . . . . l
TC = +125oC, a = 0.5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . l
tP = 10ms, Sinusoidal
Maximum Power Dissipation . . . . . . . . . . . . . .PD, TC = +125oC202020W
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . .T
TL (Lead Temperature During Soldering). . . . . . . . . . . . . . . . . . .
At Distance >1/8 in. (3.17mm) From Case For 10s max.
FRM
RRM
RSM
, tP < 10µs 100 100 100 A
, Total
F(AV)
FSM
J
100 150 200 V
110 165 220 V
888A
100 100 100 A
-40 + 150 -40 + 150 -40 + 150
260 260 260
o
C
o
C
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
BYW51-100, BYW51-150, BYW51-200
Electrical Specifications Per Junction
TEST CONDITIONS LIMITS
I
R
SYMBOL
VOLTAGE
T
J
o
C
V
R
V
25100 - -5----µA
CURRENT
i
F
A
BYW51-100 BYW51-150 BYW51-200
MIN MAX MIN MAX MIN MAX
150 - - - - 5 - - µA
200 - -----5µA
100100 - -1----mA
150 - - - - 1 - - mA
200 - -----1mA
V
F
25 - 8 - 0.95 - 0.95 - 0.95 V
100 - 8 - 0.89 - 0.89 - 0.89 V
t
RR
R
, Per Leg - - - 2.5 - 2.5 - 2.5
θJC
R
, Total - - - 1.3 - 1.3 - 1.3
θJC
R
θJA
C
J
25 - 1 (Note 1) - 35 - 35 - 35 ns
- - -60-60-60oC/W
25 10 0 All types (typ.) 40 pF
UNITS
o
C/W
o
C/W
NOTE:
1. dIF/dt > 50A/µs, IRM(rec) <1A, I
= 0.25A.
RR
2
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