Intersil Corporation BUZ76A Datasheet

Semiconductor

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BUZ76A

Data Sheet October 1998 File Number 2265.1

[ /Title
(BUZ76
A)

Sub-

ect
(2.6A,
400V,

2.500
Ohm,
N-Chan­nel
Power
MOS­FET)

Author
()

Key­words
(Harris
Semi­conduc­tor, N­Chan­nel
Power
MOS­FET,
TO­220AB)

Cre­ator ()

DOCIN
FO pdf­mark

2.6A, 400V, 2.500 Ohm, N-Channel Power
MOSFET

This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Formerly developmental type TA17404.

Ordering Information

PART NUMBER PACKAGE BRAND

BUZ76A TO-220AB BUZ76A

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-220AB

DRAIN (FLANGE)

Features

• 2.6A, 400V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 2.500Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

S

SOURCE

DRAIN

GATE

[ /Page­Mode

Use-

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998

BUZ76A

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

BUZ76A UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current (TC = 30oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D

DM

GS

D

400 V
400 V

2.6 A
10 A

±20 V

40 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

STG

, T

J

-55 to 150

o

C

DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V 400 - - V

= VDS, ID = 1mA 2.1 3 4 V
TJ = 25oC, VDS = 400V, VGS = 0V - 20 250 µA
TJ = 125oC, VDS = 400V, VGS = 0V - 100 1000 µA

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VCC

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

GSS

OSS
RSS

VGS = 20V, VDS = 0V - 10 100 nA

= 1.5A, VGS = 10V (Figure 8) - 2.2 2.500 Ω

VDS = 25V, ID = 1.5A (Figure 11) 2.1 2.5 - S

fs

= 30V, I
RL = 10Ω. (Figures 14, 15)

r

≈ 2.4A, V

D

= 10V, RGS = 50Ω,

GS

-1520 ns

-4060 ns

-5065 ns

f

VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 300 500 pF

ISS

-3040 ns

-5080pF

-3560pF

θJC
θJA

≤ 3.1

≤ 75

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulsed Source to Drain Current I
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

SD

SDM

TC = 25oC - - 2.6 A
TC = 25oC--10A
TJ = 25oC, ISD = 5.2A, VGS = 0V - 1.1 1.4 V

SD

TJ = 25oC, ISD = 2.6A, dISD/dt = 100A/µs,

rr

VR = 100V

RR

- 300 - ns

- 2.5 - µC

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

2