Semiconductor
BUZ73A
Data Sheet October 1998 File Number 2263.1
[ /Title
(BUZ73
A)
Subject
(5.8A,
200V,
0.600
Ohm, NChannel
Power
MOSFET)
Author
()
Keywords
(Harris
Semiconductor, NChannel
Power
MOSFET,
TO220AB)
Creator
()
DOCIN
FO pdfmark
5.8A, 200V, 0.600 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA4600.
Ordering Information
PART NUMBER PACKAGE BRAND
BUZ73A TO-220AB BUZ73A
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
Features
• 5.8A, 200V
•r
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.600Ω
DS(ON)
Components to PC Boards”
Symbol
D
G
S
SOURCE
DRAIN
GATE
[ /PageMode
UseOutlines
DOCVIEW
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
| Copyright © Harris Corporation 1998
BUZ73A
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
BUZ76A UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current (TC = 30oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DS
D
DM
GS
D
200 V
200 V
5.8 A
23 A
±20 V
40 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150
o
C
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I
DSSID
GS(TH)VGS
DSS
= 250µA, VGS = 0V 200 - - V
= VDS, ID = 1mA (Figure 9) 2.1 3 4 V
TJ = 25oC, VDS = 200V, VGS = 0V - 20 250 µA
TJ = 125oC, VDS = 200V, VGS = 0V - 100 1000 µA
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)ID
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)VCC
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
GSS
OSS
RSS
VGS = 20V, VDS = 0V - 10 100 nA
= 3.5A, VGS = 10V (Figure 8) - 0.5 0.600 Ω
VDS = 25V, ID = 3.5A (Figure 11) 2.2 3.5 - S
fs
= 30V, I
RL = 10Ω. (Figures 14, 15)
r
≈ 2.8A, V
D
= 10V, RGS=50Ω,
GS
-1520 ns
-4060 ns
-7090 ns
f
VDS = 25V, VGS = 0V, f = 1MHz
ISS
(Figure 10)
-4055 ns
- 450 600 pF
- 100 160 pF
-5080pF
θJC
θJA
≤ 3.1
≤ 75
o
o
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
Pulsed Source to Drain Current I
Drain to Source Diode Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
SD
SDM
TC = 25oC - - 5.8 A
- - 23 A
TJ = 25oC, ISD = 11.6A, VGS = 0V - 1.4 1.7 V
SD
TJ = 25oC, ISD = 5.8A, dISD/dt = 100A/µs,
rr
VR = 100V
RR
- 200 - ns
- 0.6 - µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
2