Intersil Corporation BUZ73A Datasheet

Semiconductor

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BUZ73A

Data Sheet October 1998 File Number 2263.1

[ /Title
(BUZ73
A)

Subject
(5.8A,
200V,

0.600
Ohm, N­Channel
Power
MOS­FET)

Author
()

Key­words
(Harris
Semi­conduc­tor, N­Channel
Power
MOS­FET,
TO­220AB)

Creator
()

DOCIN
FO pdf­mark

5.8A, 200V, 0.600 Ohm, N-Channel Power
MOSFET

This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Formerly developmental type TA4600.

Ordering Information

PART NUMBER PACKAGE BRAND

BUZ73A TO-220AB BUZ73A

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-220AB

DRAIN (FLANGE)

Features

• 5.8A, 200V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.600Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

S

SOURCE

DRAIN

GATE

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1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998

BUZ73A

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

BUZ76A UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current (TC = 30oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D

DM

GS

D

200 V
200 V

5.8 A
23 A

±20 V

40 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

o

C

DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V 200 - - V

= VDS, ID = 1mA (Figure 9) 2.1 3 4 V
TJ = 25oC, VDS = 200V, VGS = 0V - 20 250 µA
TJ = 125oC, VDS = 200V, VGS = 0V - 100 1000 µA

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VCC

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

GSS

OSS
RSS

VGS = 20V, VDS = 0V - 10 100 nA

= 3.5A, VGS = 10V (Figure 8) - 0.5 0.600 Ω

VDS = 25V, ID = 3.5A (Figure 11) 2.2 3.5 - S

fs

= 30V, I
RL = 10Ω. (Figures 14, 15)

r

≈ 2.8A, V

D

= 10V, RGS=50Ω,

GS

-1520 ns

-4060 ns

-7090 ns

f

VDS = 25V, VGS = 0V, f = 1MHz

ISS

(Figure 10)

-4055 ns

- 450 600 pF

- 100 160 pF

-5080pF

θJC
θJA

≤ 3.1

≤ 75

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulsed Source to Drain Current I
Drain to Source Diode Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

SD

SDM

TC = 25oC - - 5.8 A

- - 23 A

TJ = 25oC, ISD = 11.6A, VGS = 0V - 1.4 1.7 V

SD

TJ = 25oC, ISD = 5.8A, dISD/dt = 100A/µs,

rr

VR = 100V

RR

- 200 - ns

- 0.6 - µC

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

2